Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties3 figures
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | minimum Rxx | 15ohm/sq | — | |||
| Fet Sheet Resistance | oscillation amplitude in Rxx | 60ohm/sq | — | |||
| Fet Carrier Concentration | fixed carrier density | -2.16 × 10^12cm⁻² | — | |||
| Fet Sheet Resistance | peak width | 26mV/nm | — | |||
| Fet Sheet Resistance | peak width | 16mV/nm | — | |||
| Fet Sheet Resistance | energy linewidth | 1.85meV | — | |||
| Fet Sheet Resistance | oscillation frequency Bf | 11T | — | |||
| Fet Sheet Resistance | FFT peak count | 3 peaks | — | |||
| Fet Sheet Resistance | FFT peak count | 1 peak | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 6.3uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 19uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 7uF/cm2 | — | |||
| Fet Carrier Concentration | effective mass | 0.08me | — | |||
| Fet Carrier Concentration | effective mass | 0.06me | — | |||
| Pl Peak Fwhm | A exciton | 1.85meV | — | — | — | — |
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Topological electronic crystals in twisted bilayer–trilayer graphene
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties3 figures
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | minimum Rxx | 15ohm/sq | — | |||
| Fet Sheet Resistance | oscillation amplitude in Rxx | 60ohm/sq | — | |||
| Fet Carrier Concentration | fixed carrier density | -2.16 × 10^12cm⁻² | — | |||
| Fet Sheet Resistance | peak width | 26mV/nm | — | |||
| Fet Sheet Resistance | peak width | 16mV/nm | — | |||
| Fet Sheet Resistance | energy linewidth | 1.85meV | — | |||
| Fet Sheet Resistance | oscillation frequency Bf | 11T | — | |||
| Fet Sheet Resistance | FFT peak count | 3 peaks | — | |||
| Fet Sheet Resistance | FFT peak count | 1 peak | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 6.3uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 19uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 7uF/cm2 | — | |||
| Fet Carrier Concentration | effective mass | 0.08me | — | |||
| Fet Carrier Concentration | effective mass | 0.06me | — | |||
| Pl Peak Fwhm | A exciton | 1.85meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Topological electronic crystals in twisted bilayer–trilayer graphene
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions
Emergence of Chern metal in a moiré Kondo lattice
Ultra-narrowband interference circuits enable low-noise and high-rate photon counting for InGaAs/InP avalanche photodiodes
Tunable Current Rectification Through a Designer Graphene Nanoribbon
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Observation of Cavity-Mediated Nonlinear Landau Fan and Modified Landau Level Degeneracy in Graphene Quantum Transport
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Unexpected large electrostatic gating by pyroelectric charge accumulation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties3 figures
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | minimum Rxx | 15ohm/sq | — | |||
| Fet Sheet Resistance | oscillation amplitude in Rxx | 60ohm/sq | — | |||
| Fet Carrier Concentration | fixed carrier density | -2.16 × 10^12cm⁻² | — | |||
| Fet Sheet Resistance | peak width | 26mV/nm | — | |||
| Fet Sheet Resistance | peak width | 16mV/nm | — | |||
| Fet Sheet Resistance | energy linewidth | 1.85meV | — | |||
| Fet Sheet Resistance | oscillation frequency Bf | 11T | — | |||
| Fet Sheet Resistance | FFT peak count | 3 peaks | — | |||
| Fet Sheet Resistance | FFT peak count | 1 peak | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 6.3uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 19uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 7uF/cm2 | — | |||
| Fet Carrier Concentration | effective mass | 0.08me | — | |||
| Fet Carrier Concentration | effective mass | 0.06me | — | |||
| Pl Peak Fwhm | A exciton | 1.85meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Topological electronic crystals in twisted bilayer–trilayer graphene
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions
Emergence of Chern metal in a moiré Kondo lattice
Ultra-narrowband interference circuits enable low-noise and high-rate photon counting for InGaAs/InP avalanche photodiodes
Tunable Current Rectification Through a Designer Graphene Nanoribbon
Graphene phase modulators operating in the transparency regime
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Observation of Cavity-Mediated Nonlinear Landau Fan and Modified Landau Level Degeneracy in Graphene Quantum Transport
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Unexpected large electrostatic gating by pyroelectric charge accumulation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization14 properties3 figures
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | minimum Rxx | 15ohm/sq | — | |||
| Fet Sheet Resistance | oscillation amplitude in Rxx | 60ohm/sq | — | |||
| Fet Carrier Concentration | fixed carrier density | -2.16 × 10^12cm⁻² | — | |||
| Fet Sheet Resistance | peak width | 26mV/nm | — | |||
| Fet Sheet Resistance | peak width | 16mV/nm | — | |||
| Fet Sheet Resistance | energy linewidth | 1.85meV | — | |||
| Fet Sheet Resistance | oscillation frequency Bf | 11T | — | |||
| Fet Sheet Resistance | FFT peak count | 3 peaks | — | |||
| Fet Sheet Resistance | FFT peak count | 1 peak | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 6.3uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 19uF/cm2 | — | |||
| Fet Carrier Concentration | interlayer capacitance Cm | 7uF/cm2 | — | |||
| Fet Carrier Concentration | effective mass | 0.08me | — | |||
| Fet Carrier Concentration | effective mass | 0.06me | — | |||
| Pl Peak Fwhm | A exciton | 1.85meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Topological electronic crystals in twisted bilayer–trilayer graphene
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions
Emergence of Chern metal in a moiré Kondo lattice
Ultra-narrowband interference circuits enable low-noise and high-rate photon counting for InGaAs/InP avalanche photodiodes
Tunable Current Rectification Through a Designer Graphene Nanoribbon
Graphene phase modulators operating in the transparency regime
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Observation of Cavity-Mediated Nonlinear Landau Fan and Modified Landau Level Degeneracy in Graphene Quantum Transport
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Unexpected large electrostatic gating by pyroelectric charge accumulation