Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Shalini Badola; Adlen Smiri; Thomas Pelini; Aditi Moghe; Tristan Riccardi; Amit Pawbake; Kenji Watanabe; Takashi Taniguchi; Iann C. Gerber; Clément Faugeras

doi:10.48550/arXiv.2605.18506

Paper details

Research paper

Experimental CharacterizationComputational DFT

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Shalini Badola, Adlen Smiri, Thomas Pelini, Aditi Moghe et al.

arXiv·2026·arXiv:2605.18506

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

1 preparation2 characterizations1 figure

ExperimentalWSe₂Studied MaterialhBNStudied MaterialCSubstrate / Dielectric

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

3 properties

Simulated Supercell DftWSe₂Studied MaterialhBNStudied Material

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

1 property

Simulated Supercell DftWSe₂Studied Material

Materials

WSe₂

Studied Material

Also known as

monolayer WSe₂

studied material

hexagonal boron nitride

hBN

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Interlayer Distance	Se-BN separation	3.45angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Distance	Se-BN separation	3.18angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Vacuum Spacing	effective vacuum spacing d	0.8angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Band Gap Shift	fundamental band gap shift	10meV	WSe₂	DFT monolayer WSe₂ used for band-structure calculations unde	—

Properties

Type	Label	Value	Material	Sample	Source
Interlayer Distance	Se-BN separation	3.45angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Distance	Se-BN separation	3.18angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Vacuum Spacing	effective vacuum spacing d	0.8angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Band Gap Shift	fundamental band gap shift	10meV	WSe₂	DFT monolayer WSe₂ used for band-structure calculations unde	—

Properties

Type	Label	Value	Material	Sample	Source
Interlayer Distance	Se-BN separation	3.45angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Distance	Se-BN separation	3.18angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Vacuum Spacing	effective vacuum spacing d	0.8angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Band Gap Shift	fundamental band gap shift	10meV	WSe₂	DFT monolayer WSe₂ used for band-structure calculations unde	—

Properties

Type	Label	Value	Material	Sample	Source
Interlayer Distance	Se-BN separation	3.45angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Distance	Se-BN separation	3.18angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Interlayer Vacuum Spacing	effective vacuum spacing d	0.8angstrom	WSe₂ hBN	DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layer	—
Band Gap Shift	fundamental band gap shift	10meV	WSe₂	DFT monolayer WSe₂ used for band-structure calculations unde	—

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Samples

hBN/WSe₂/hBN van der Waals heterostructure exfoliated by scotch-tape and assembled by PDMS dry transfer on the culet of a diamond anvil cell; bottom hBN about 38 nm and top hBN about 10 nm.

DFT-modeled monolayer WSe₂ sandwiched between bulk hBN layers for dielectric screening and interlayer-distance calculations.

DFT monolayer WSe₂ used for band-structure calculations under ambient pressure and at 3 GPa.

Materials

Why these are connected

Processing

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Simulations

Processing

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Processing

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Processing

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