Research paper
Experimental CharacterizationComputational DFTComputed RamanEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations4 figures
2 preparations4 characterizations4 figures
2 preparations4 characterizations1 property4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | relative twist angle | 0deg | — | |||
| Twist Angle | relative twist angle | 13deg | — | |||
| Twist Angle | relative twist angle | 28deg | — | |||
| Twist Angle | relative twist angle | 2.3deg | — | |||
| Blueshift | C excitonic peak | 200meV | — |
Related documents with shared materials, methods, properties, or citations.
Charge dynamics in the 2D/3D semiconductor heterostructure WSe2/GaAs
Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps
Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moiré WSe2
Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
Robust valley-polarized excitonic Mott states and doublons enabled by stacking-controlled moiré geometry
Element-specific ultrafast lattice dynamics in monolayer WSe2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations4 figures
2 preparations4 characterizations4 figures
2 preparations4 characterizations1 property4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | relative twist angle | 0deg | — | |||
| Twist Angle | relative twist angle | 13deg | — | |||
| Twist Angle | relative twist angle | 28deg | — | |||
| Twist Angle | relative twist angle | 2.3deg | — | |||
| Blueshift | C excitonic peak | 200meV | — |
Related documents with shared materials, methods, properties, or citations.
Charge dynamics in the 2D/3D semiconductor heterostructure WSe2/GaAs
Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps
Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moiré WSe2
Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
Robust valley-polarized excitonic Mott states and doublons enabled by stacking-controlled moiré geometry
Element-specific ultrafast lattice dynamics in monolayer WSe2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations4 figures
2 preparations4 characterizations4 figures
2 preparations4 characterizations1 property4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | relative twist angle | 0deg | — | |||
| Twist Angle | relative twist angle | 13deg | — | |||
| Twist Angle | relative twist angle | 28deg | — | |||
| Twist Angle | relative twist angle | 2.3deg | — | |||
| Blueshift | C excitonic peak | 200meV | — |
Related documents with shared materials, methods, properties, or citations.
Charge dynamics in the 2D/3D semiconductor heterostructure WSe2/GaAs
Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps
Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moiré WSe2
Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
Robust valley-polarized excitonic Mott states and doublons enabled by stacking-controlled moiré geometry
Element-specific ultrafast lattice dynamics in monolayer WSe2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations4 figures
2 preparations4 characterizations4 figures
2 preparations4 characterizations1 property4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
2 preparations4 characterizations2 properties4 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | relative twist angle | 0deg | — | |||
| Twist Angle | relative twist angle | 13deg | — | |||
| Twist Angle | relative twist angle | 28deg | — | |||
| Twist Angle | relative twist angle | 2.3deg | — | |||
| Blueshift | C excitonic peak | 200meV | — |
Related documents with shared materials, methods, properties, or citations.
Charge dynamics in the 2D/3D semiconductor heterostructure WSe2/GaAs
Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps
Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moiré WSe2
Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
Robust valley-polarized excitonic Mott states and doublons enabled by stacking-controlled moiré geometry
Element-specific ultrafast lattice dynamics in monolayer WSe2
figure_digitization.json#Figure 1(d)figure_digitization.json#Figure 4figure_digitization.json#Figure 1(d)figure_digitization.json#Figure 4figure_digitization.json#Figure 1(d)figure_digitization.json#Figure 4figure_digitization.json#Figure 1(d)figure_digitization.json#Figure 4