Quantum effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

GaN-BASED SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME

Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys

Quantum effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

GaN-BASED SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME

Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys

Quantum effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

GaN-BASED SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME

Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys

Quantum effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

GaN-BASED SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME

Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys