Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Mylène Sauty; Jean-Philippe Banon; Nicolas M. S. Lopes; Tanay Tak; James S. Speck; Claude Weisbuch; Jacques Peretti

doi:10.1103/jmkv-pxy4

Paper details

Research paper

TheoreticalExperimental Characterization

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Mylène Sauty, Jean-Philippe Banon, Nicolas M. S. Lopes, Tanay Tak et al.

arXiv preprint·2026·10.1103/jmkv-pxy4·arXiv:2503.22393

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

1 characterization1 figure

ExperimentalGaNStudied MaterialCsCapping Or Contact

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

6 properties

SimulatedGaNStudied MaterialCsCapping Or Contact

Materials

GaN

Studied Material

Also known as

p-GaNp-doped GaNcesiated p-GaN

Variables

doping= Mg

doping_concentration_cm^-3= 100000000000000000000

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Resonant State Energy	resonant state 1	2.4eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Energy	resonant state 2	3eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 1 linewidth	37.7meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 2 linewidth	28.2meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 1 lifetime	17.5fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 2 lifetime	23.4fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Resonant State Energy	resonant state 1	2.4eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Energy	resonant state 2	3eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 1 linewidth	37.7meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 2 linewidth	28.2meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 1 lifetime	17.5fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 2 lifetime	23.4fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Resonant State Energy	resonant state 1	2.4eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Energy	resonant state 2	3eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 1 linewidth	37.7meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 2 linewidth	28.2meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 1 lifetime	17.5fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 2 lifetime	23.4fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Resonant State Energy	resonant state 1	2.4eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Energy	resonant state 2	3eV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 1 linewidth	37.7meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Linewidth	resonant state 2 linewidth	28.2meV	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 1 lifetime	17.5fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Resonant State Lifetime	resonant state 2 lifetime	23.4fs	GaN	Open-quantum-well model of the cesiated p-GaN surface treate		—
Optical Band Gap	band gap	3.4eV	GaN	—	—	—

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Samples

Cesiated Mg-doped p-type GaN surface with a downward band-bending region and an open quantum well at the free surface.

Open-quantum-well model of the cesiated p-GaN surface treated with an effective-mass envelope-function Green's-function framework.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations