Abstract

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. The paper predicts metastable resonant states in this nonconfining potential and reports their experimental observation by near-band-gap photoemission spectroscopy, with observed photoemission features agreeing with the calculations.

Abstract

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. The paper predicts metastable resonant states in this nonconfining potential and reports their experimental observation by near-band-gap photoemission spectroscopy, with observed photoemission features agreeing with the calculations.

Abstract

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. The paper predicts metastable resonant states in this nonconfining potential and reports their experimental observation by near-band-gap photoemission spectroscopy, with observed photoemission features agreeing with the calculations.

Abstract

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. The paper predicts metastable resonant states in this nonconfining potential and reports their experimental observation by near-band-gap photoemission spectroscopy, with observed photoemission features agreeing with the calculations.