Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Junjie Zhou; Shanshan Wang; Menglin Huang; Xin-Gao Gong; Shiyou Chen

doi:10.1021/jacs.3c09808

Paper details

Research paper

Computational DFTComputed PhononTheoretical

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Junjie Zhou, Shanshan Wang, Menglin Huang, Xin-Gao Gong et al.

arXiv·2025·10.1021/jacs.3c09808·arXiv:2501.04289

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

3 properties

Simulated Supercell DftGaNStudied MaterialC_N in GaNStudied Material

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

No measurements recorded

Simulated Supercell DftGaNStudied MaterialC_N in GaNStudied Material

Materials

GaN

Studied Material

studied material

carbon substitutional defect in GaN

C_N in GaN

Studied Material

Also known as

CN defect

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Defect Transition Level	(0/-1) level	1.13eV	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-8cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-10cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—

Properties

Type	Label	Value	Material	Sample	Source
Defect Transition Level	(0/-1) level	1.13eV	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-8cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-10cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—

Properties

Type	Label	Value	Material	Sample	Source
Defect Transition Level	(0/-1) level	1.13eV	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-8cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-10cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—

Properties

Type	Label	Value	Material	Sample	Source
Defect Transition Level	(0/-1) level	1.13eV	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-8cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—
Capture Coefficient	Cp	1e-10cm³ s⁻¹	GaN C_N in GaN	Neutral carbon substitutional defect CN in GaN used as the b	—

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Samples

Neutral carbon substitutional defect CN in GaN used as the benchmark defect system for phonon renormalization analysis.

-1 charged carbon substitutional defect CN in GaN used for comparing initial-state and final-state phonons and capture coefficients.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations