Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth; Asger B. Gardner; Xinru Ji; Shivaprasad U. Hulyal; Mikael S. Reichler; Alaina Attanasio; Johann Riemensberger; Sunil A. Bhave; Nicolas Volet; Simone Bianconi; Tobias J. Kippenberg

doi:10.48550/arXiv.2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Research paper

Experimental CharacterizationComputational Multiscale

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Anat Siddharth, Asger B. Gardner, Xinru Ji, Shivaprasad U. Hulyal et al.

arXiv·2025·10.48550/arXiv.2508.02568·arXiv:2508.02568

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

3 characterizations12 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

3 characterizations7 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

3 characterizations12 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

3 characterizations7 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

3 characterizations12 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

3 characterizations7 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

3 characterizations12 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

3 characterizations7 properties4 figures

ExperimentalSi₃N₄Studied MaterialAlNStudied MaterialMoCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricGaNStudied Materialfabry-perot laser diodeStudied Material

Type	Label	Value	Material	Sample	Source
Xrd Lattice Constant A	Si₃N₄ core thickness	25nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Xrd Lattice Constant A	Si₃N₄ core thickness	50nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	2500000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	400000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	central lasing mode	461.5nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	SMSR	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	900MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	125MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	18MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	12.4MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.02	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.014	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	2mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	0.8mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	intrinsic linewidth	330kHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	side-mode suppression ratio	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	chirp repetition rate	1MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—

Type	Label	Value	Material	Sample	Source
Xrd Lattice Constant A	Si₃N₄ core thickness	25nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Xrd Lattice Constant A	Si₃N₄ core thickness	50nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	2500000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	400000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	central lasing mode	461.5nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	SMSR	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	900MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	125MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	18MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	12.4MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.02	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.014	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	2mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	0.8mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	intrinsic linewidth	330kHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	side-mode suppression ratio	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	chirp repetition rate	1MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—

Type	Label	Value	Material	Sample	Source
Xrd Lattice Constant A	Si₃N₄ core thickness	25nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Xrd Lattice Constant A	Si₃N₄ core thickness	50nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	2500000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	400000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	central lasing mode	461.5nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	SMSR	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	900MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	125MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	18MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	12.4MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.02	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.014	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	2mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	0.8mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	intrinsic linewidth	330kHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	side-mode suppression ratio	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	chirp repetition rate	1MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—

Type	Label	Value	Material	Sample	Source
Xrd Lattice Constant A	Si₃N₄ core thickness	25nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Xrd Lattice Constant A	Si₃N₄ core thickness	50nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	2500000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	intrinsic Q-factor	400000	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	central lasing mode	461.5nm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	SMSR	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	900MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Optical Band Gap	frequency excursion	125MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	18MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	tuning efficiency	12.4MHz/V	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.02	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	tuning nonlinearity	0.014	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	2mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Mobility	optical output power	0.8mW	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	intrinsic linewidth	330kHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Threshold Voltage	side-mode suppression ratio	31dB	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet Sheet Resistance	propagation loss	0.4dB/cm	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—
Fet On Off Ratio	chirp repetition rate	1MHz	Si₃N₄	Hybrid integrated blue-laser photonic chip using a GaN-based	—

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Narrow-linewidth, piezoelectrically tunable photonic integrated blue laser

Samples

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

Materials

Characterization

Properties

Simulations

Why these are connected

Samples

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

Materials

Characterization

Properties

Simulations

Why these are connected

Samples

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

Materials

Characterization

Properties

Simulations

Why these are connected

Samples

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 25 nm Si₃N₄ core.

Hybrid integrated blue-laser photonic chip using a GaN-based FP laser diode butt-coupled to a Si₃N₄ microring resonator platform with monolithically integrated AlN piezoelectric actuators and Mo electrodes; platform variant with 50 nm Si₃N₄ core.

Materials

Characterization

Properties

Simulations

Why these are connected