Patent
US 10,985,284HIGH-VOLTAGE LATERAL GaN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUNCTION LEAKAGE CURRENT
Timothy E. Boles
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 10,985,284Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C depicts a plan view of multiple anode and cathode contacts for a high- voltage Schottky diode comprising gallium-nitride material, according to some …
FIG. 2 depicts an elevation view of structure of a high-voltage Schottky diode 5 having two anode- connected field plates, according to some embodiments;
FIG. 3 depicts an elevation view of structure of a high-voltage Schottky diode having one anode-connected field plate, for which electric field simulations were …
FIG. 4 illustrates calculated electric field profiles along a GaN conduction layer 10 for the structure depicted in
FIG. 5 illustrates calculated electric field profiles along a GaN conduction layer for the structure depicted in
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 8 illustrates calculated electric field profiles along a GaN conduction layer 25 for the structure depicted in
FIG. 9C illustrates the value of the third electric field peak E 3 below the second field-plate edge in the GaN conduction layer for the structure depicted in
FIG. 10 illustrates the effect of varying the distance between the first and second 5 field-plate edges on breakdown voltage for two anode-to-cathode separations;
FIG. 11 (location and direction indicated by the dashed arrow) at four reverse-bias potentials where the third anode-connected field plate extends approximately …
FIG. 12A illustrates calculated electric field profiles along a GaN conduction 10 layer for the structure depicted in
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
FIG. 14 depicts a semiconductor device structure and leakage current paths associated with a Schottky diode; 5
FIG. 15 illustrates leakage current characteristics for a test device structure;
FIG. 16B depicts formation of isolation regions by ion implantation, according to some embodiments;
FIG. 17 depicts an elevation view of structure of a lateral, high-voltage Schottky 10 diode comprising gallium-nitride material, according to some embodiments;
FIG. 18 depicts a reduction in leakage current due to oxygen plasma treatment of a gallium-nitride surface prior to forming an anode, according to some …
FIG. 19 shows measured reverse-bias characteristics of exemplary Schottky diodes fabricated according to the present embodiments. 15 Features and advantages of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky diode comprising: a gallium-nitride conduction layer; a barrier layer formed adjacent to the gallium-nitride conduction layer; a first cathode and a second cathode spaced apart and formed in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein q electrically connected to each other as a cathode of the Schottky diode; an anode formed adjacent to the barrier layer between the first cathode and the second cathode; and a gallium-oxide layer formed between the anode and the barrier layer and that extends under a center of the anode. Currently amended
The Schottky diode of claim 1, further comprising one or more anode-connected field plates electrically connected to the anode and extending on opposite edges beyond the anode toward the first cathode and the second cathode. Original
The Schottky diode of claim 1, further comprising a buffer layer formed on a substrate, wherein a combined thickness of the buffer layer and gallium- nitride conduction layer is at least 4.5 microns. Original
The Schottky diode of claim 1, wherein a distance between an edge of the first or the second cathode and an edge of the anode is between approximately 5 microns and approximately microns. Original
The Schottky diode of claim 1, wherein a length of the anode is between approximately 2 microns and approximately 20 microns. Original
The Schottky diode of claim 1, included in a power converter. Original
The Schottky diode of claim [[18]] 20, wherein an outer edge of the second extension is spaced horizontally from the first or second cathode by at least 3 microns. Currently amended
A method for making a Schottky diode, the method comprising: forming a gallium-nitride conduction layer on a substrate; forming a barrier layer adjacent to the gallium-nitride conduction layer; forming a first cathode and a second cathode spaced apart and in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein g electrically connected to each other as a cathode of the Schottky diode; Application Number: 15/223,677 Docket Number: 171305-1820 forming an anode adjacent to the barrier layer between the first cathode and the second cathode; and forming a gallium-oxide layer between the anode and the barrier layer such that the gallium-oxide layer extends under a center of the anode. Currently amended
The method of claim 25, wherein forming the gallium-oxide layer comprises: opening a via to expose a region of a gallium-nitride layer f or the anode prior to forming the anode; and subjecting the exposed region to an oxygen plasma for a period of time. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
high-voltage lateral GaN-on-silicon Schottky diode
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reverse-bias breakdown voltage (claimed upper limit) | 2000 V | — |
reverse-bias current at 2000 V (claimed range) | 0.4–40 microamp/mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,985,284Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C depicts a plan view of multiple anode and cathode contacts for a high- voltage Schottky diode comprising gallium-nitride material, according to some …
FIG. 2 depicts an elevation view of structure of a high-voltage Schottky diode 5 having two anode- connected field plates, according to some embodiments;
FIG. 3 depicts an elevation view of structure of a high-voltage Schottky diode having one anode-connected field plate, for which electric field simulations were …
FIG. 4 illustrates calculated electric field profiles along a GaN conduction layer 10 for the structure depicted in
FIG. 5 illustrates calculated electric field profiles along a GaN conduction layer for the structure depicted in
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 8 illustrates calculated electric field profiles along a GaN conduction layer 25 for the structure depicted in
FIG. 9C illustrates the value of the third electric field peak E 3 below the second field-plate edge in the GaN conduction layer for the structure depicted in
FIG. 10 illustrates the effect of varying the distance between the first and second 5 field-plate edges on breakdown voltage for two anode-to-cathode separations;
FIG. 11 (location and direction indicated by the dashed arrow) at four reverse-bias potentials where the third anode-connected field plate extends approximately …
FIG. 12A illustrates calculated electric field profiles along a GaN conduction 10 layer for the structure depicted in
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
FIG. 14 depicts a semiconductor device structure and leakage current paths associated with a Schottky diode; 5
FIG. 15 illustrates leakage current characteristics for a test device structure;
FIG. 16B depicts formation of isolation regions by ion implantation, according to some embodiments;
FIG. 17 depicts an elevation view of structure of a lateral, high-voltage Schottky 10 diode comprising gallium-nitride material, according to some embodiments;
FIG. 18 depicts a reduction in leakage current due to oxygen plasma treatment of a gallium-nitride surface prior to forming an anode, according to some …
FIG. 19 shows measured reverse-bias characteristics of exemplary Schottky diodes fabricated according to the present embodiments. 15 Features and advantages of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky diode comprising: a gallium-nitride conduction layer; a barrier layer formed adjacent to the gallium-nitride conduction layer; a first cathode and a second cathode spaced apart and formed in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein q electrically connected to each other as a cathode of the Schottky diode; an anode formed adjacent to the barrier layer between the first cathode and the second cathode; and a gallium-oxide layer formed between the anode and the barrier layer and that extends under a center of the anode. Currently amended
The Schottky diode of claim 1, further comprising one or more anode-connected field plates electrically connected to the anode and extending on opposite edges beyond the anode toward the first cathode and the second cathode. Original
The Schottky diode of claim 1, further comprising a buffer layer formed on a substrate, wherein a combined thickness of the buffer layer and gallium- nitride conduction layer is at least 4.5 microns. Original
The Schottky diode of claim 1, wherein a distance between an edge of the first or the second cathode and an edge of the anode is between approximately 5 microns and approximately microns. Original
The Schottky diode of claim 1, wherein a length of the anode is between approximately 2 microns and approximately 20 microns. Original
The Schottky diode of claim 1, included in a power converter. Original
The Schottky diode of claim [[18]] 20, wherein an outer edge of the second extension is spaced horizontally from the first or second cathode by at least 3 microns. Currently amended
A method for making a Schottky diode, the method comprising: forming a gallium-nitride conduction layer on a substrate; forming a barrier layer adjacent to the gallium-nitride conduction layer; forming a first cathode and a second cathode spaced apart and in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein g electrically connected to each other as a cathode of the Schottky diode; Application Number: 15/223,677 Docket Number: 171305-1820 forming an anode adjacent to the barrier layer between the first cathode and the second cathode; and forming a gallium-oxide layer between the anode and the barrier layer such that the gallium-oxide layer extends under a center of the anode. Currently amended
The method of claim 25, wherein forming the gallium-oxide layer comprises: opening a via to expose a region of a gallium-nitride layer f or the anode prior to forming the anode; and subjecting the exposed region to an oxygen plasma for a period of time. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
high-voltage lateral GaN-on-silicon Schottky diode
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reverse-bias breakdown voltage (claimed upper limit) | 2000 V | — |
reverse-bias current at 2000 V (claimed range) | 0.4–40 microamp/mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,985,284Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C depicts a plan view of multiple anode and cathode contacts for a high- voltage Schottky diode comprising gallium-nitride material, according to some …
FIG. 2 depicts an elevation view of structure of a high-voltage Schottky diode 5 having two anode- connected field plates, according to some embodiments;
FIG. 3 depicts an elevation view of structure of a high-voltage Schottky diode having one anode-connected field plate, for which electric field simulations were …
FIG. 4 illustrates calculated electric field profiles along a GaN conduction layer 10 for the structure depicted in
FIG. 5 illustrates calculated electric field profiles along a GaN conduction layer for the structure depicted in
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 8 illustrates calculated electric field profiles along a GaN conduction layer 25 for the structure depicted in
FIG. 9C illustrates the value of the third electric field peak E 3 below the second field-plate edge in the GaN conduction layer for the structure depicted in
FIG. 10 illustrates the effect of varying the distance between the first and second 5 field-plate edges on breakdown voltage for two anode-to-cathode separations;
FIG. 11 (location and direction indicated by the dashed arrow) at four reverse-bias potentials where the third anode-connected field plate extends approximately …
FIG. 12A illustrates calculated electric field profiles along a GaN conduction 10 layer for the structure depicted in
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
FIG. 14 depicts a semiconductor device structure and leakage current paths associated with a Schottky diode; 5
FIG. 15 illustrates leakage current characteristics for a test device structure;
FIG. 16B depicts formation of isolation regions by ion implantation, according to some embodiments;
FIG. 17 depicts an elevation view of structure of a lateral, high-voltage Schottky 10 diode comprising gallium-nitride material, according to some embodiments;
FIG. 18 depicts a reduction in leakage current due to oxygen plasma treatment of a gallium-nitride surface prior to forming an anode, according to some …
FIG. 19 shows measured reverse-bias characteristics of exemplary Schottky diodes fabricated according to the present embodiments. 15 Features and advantages of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky diode comprising: a gallium-nitride conduction layer; a barrier layer formed adjacent to the gallium-nitride conduction layer; a first cathode and a second cathode spaced apart and formed in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein q electrically connected to each other as a cathode of the Schottky diode; an anode formed adjacent to the barrier layer between the first cathode and the second cathode; and a gallium-oxide layer formed between the anode and the barrier layer and that extends under a center of the anode. Currently amended
The Schottky diode of claim 1, further comprising one or more anode-connected field plates electrically connected to the anode and extending on opposite edges beyond the anode toward the first cathode and the second cathode. Original
The Schottky diode of claim 1, further comprising a buffer layer formed on a substrate, wherein a combined thickness of the buffer layer and gallium- nitride conduction layer is at least 4.5 microns. Original
The Schottky diode of claim 1, wherein a distance between an edge of the first or the second cathode and an edge of the anode is between approximately 5 microns and approximately microns. Original
The Schottky diode of claim 1, wherein a length of the anode is between approximately 2 microns and approximately 20 microns. Original
The Schottky diode of claim 1, included in a power converter. Original
The Schottky diode of claim [[18]] 20, wherein an outer edge of the second extension is spaced horizontally from the first or second cathode by at least 3 microns. Currently amended
A method for making a Schottky diode, the method comprising: forming a gallium-nitride conduction layer on a substrate; forming a barrier layer adjacent to the gallium-nitride conduction layer; forming a first cathode and a second cathode spaced apart and in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein g electrically connected to each other as a cathode of the Schottky diode; Application Number: 15/223,677 Docket Number: 171305-1820 forming an anode adjacent to the barrier layer between the first cathode and the second cathode; and forming a gallium-oxide layer between the anode and the barrier layer such that the gallium-oxide layer extends under a center of the anode. Currently amended
The method of claim 25, wherein forming the gallium-oxide layer comprises: opening a via to expose a region of a gallium-nitride layer f or the anode prior to forming the anode; and subjecting the exposed region to an oxygen plasma for a period of time. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
high-voltage lateral GaN-on-silicon Schottky diode
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reverse-bias breakdown voltage (claimed upper limit) | 2000 V | — |
reverse-bias current at 2000 V (claimed range) | 0.4–40 microamp/mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,985,284Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C depicts a plan view of multiple anode and cathode contacts for a high- voltage Schottky diode comprising gallium-nitride material, according to some …
FIG. 2 depicts an elevation view of structure of a high-voltage Schottky diode 5 having two anode- connected field plates, according to some embodiments;
FIG. 3 depicts an elevation view of structure of a high-voltage Schottky diode having one anode-connected field plate, for which electric field simulations were …
FIG. 4 illustrates calculated electric field profiles along a GaN conduction layer 10 for the structure depicted in
FIG. 5 illustrates calculated electric field profiles along a GaN conduction layer for the structure depicted in
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 8 illustrates calculated electric field profiles along a GaN conduction layer 25 for the structure depicted in
FIG. 9C illustrates the value of the third electric field peak E 3 below the second field-plate edge in the GaN conduction layer for the structure depicted in
FIG. 10 illustrates the effect of varying the distance between the first and second 5 field-plate edges on breakdown voltage for two anode-to-cathode separations;
FIG. 11 (location and direction indicated by the dashed arrow) at four reverse-bias potentials where the third anode-connected field plate extends approximately …
FIG. 12A illustrates calculated electric field profiles along a GaN conduction 10 layer for the structure depicted in
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
FIG. 14 depicts a semiconductor device structure and leakage current paths associated with a Schottky diode; 5
FIG. 15 illustrates leakage current characteristics for a test device structure;
FIG. 16B depicts formation of isolation regions by ion implantation, according to some embodiments;
FIG. 17 depicts an elevation view of structure of a lateral, high-voltage Schottky 10 diode comprising gallium-nitride material, according to some embodiments;
FIG. 18 depicts a reduction in leakage current due to oxygen plasma treatment of a gallium-nitride surface prior to forming an anode, according to some …
FIG. 19 shows measured reverse-bias characteristics of exemplary Schottky diodes fabricated according to the present embodiments. 15 Features and advantages of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Schottky diode comprising: a gallium-nitride conduction layer; a barrier layer formed adjacent to the gallium-nitride conduction layer; a first cathode and a second cathode spaced apart and formed in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein q electrically connected to each other as a cathode of the Schottky diode; an anode formed adjacent to the barrier layer between the first cathode and the second cathode; and a gallium-oxide layer formed between the anode and the barrier layer and that extends under a center of the anode. Currently amended
The Schottky diode of claim 1, further comprising one or more anode-connected field plates electrically connected to the anode and extending on opposite edges beyond the anode toward the first cathode and the second cathode. Original
The Schottky diode of claim 1, further comprising a buffer layer formed on a substrate, wherein a combined thickness of the buffer layer and gallium- nitride conduction layer is at least 4.5 microns. Original
The Schottky diode of claim 1, wherein a distance between an edge of the first or the second cathode and an edge of the anode is between approximately 5 microns and approximately microns. Original
The Schottky diode of claim 1, wherein a length of the anode is between approximately 2 microns and approximately 20 microns. Original
The Schottky diode of claim 1, included in a power converter. Original
The Schottky diode of claim [[18]] 20, wherein an outer edge of the second extension is spaced horizontally from the first or second cathode by at least 3 microns. Currently amended
A method for making a Schottky diode, the method comprising: forming a gallium-nitride conduction layer on a substrate; forming a barrier layer adjacent to the gallium-nitride conduction layer; forming a first cathode and a second cathode spaced apart and in electrical contact with the gallium-nitride conduction layer, the first cathode and the second cathode bein g electrically connected to each other as a cathode of the Schottky diode; Application Number: 15/223,677 Docket Number: 171305-1820 forming an anode adjacent to the barrier layer between the first cathode and the second cathode; and forming a gallium-oxide layer between the anode and the barrier layer such that the gallium-oxide layer extends under a center of the anode. Currently amended
The method of claim 25, wherein forming the gallium-oxide layer comprises: opening a via to expose a region of a gallium-nitride layer f or the anode prior to forming the anode; and subjecting the exposed region to an oxygen plasma for a period of time. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
high-voltage lateral GaN-on-silicon Schottky diode
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B illustrates the value of the second electric field peak E 2 below the anode- connected field- plate edge in the GaN conduction layer as a function of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reverse-bias breakdown voltage (claimed upper limit) | 2000 V | — |
reverse-bias current at 2000 V (claimed range) | 0.4–40 microamp/mm |
Related documents with shared materials, methods, properties, or citations.
gallium oxide
Ga₂O₃
anode multilayer metal
field plate multilayer metal
silicon
Si
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
| — |
gallium-oxide layer thickness (claimed range) | 1–5 nm | Ga₂O₃ |
AlGaN barrier layer thickness (claimed range) | 10–50 nm | AlGaN |
GaN cap layer thickness (claimed range) | 1–10 nm | GaN |
combined buffer + GaN conduction layer thickness (claimed minimum) | ≥ 4.5 micron | GaN |
insulating layer thickness between field plate extension and barrier layer (claimed range) | 100–300 nm | — |
Thickness | 2–20 µm | — |
Thickness | 100–1000 µm | — |
Thickness | 5–50 µm | — |
Thickness | 5–25 µm | — |
Thickness | 5–15 µm | — |
Thickness | 50–450 mm | — |
Thickness | 0.5–4 µm | — |
Thickness | 20–200 nm | — |
Thickness | 200–2000 nm | — |
Voltage | 700–1200 V | — |
Thickness | 0.2–0.5 µm | — |
Pressure | 0.5–3 Torr | — |
Temperature | 13 -1K. | — |
Thickness | ≤ 100000000 cm | — |
Thickness | ≥ 4.5 µm | — |
Thickness | ≥ 4 µm | — |
Thickness | ≥ 1 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 3 µm | — |
Thickness | 1–3 µm | — |
Duration | 10–120 seconds | — |
gallium oxide
Ga₂O₃
anode multilayer metal
field plate multilayer metal
silicon
Si
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
| — |
gallium-oxide layer thickness (claimed range) | 1–5 nm | Ga₂O₃ |
AlGaN barrier layer thickness (claimed range) | 10–50 nm | AlGaN |
GaN cap layer thickness (claimed range) | 1–10 nm | GaN |
combined buffer + GaN conduction layer thickness (claimed minimum) | ≥ 4.5 micron | GaN |
insulating layer thickness between field plate extension and barrier layer (claimed range) | 100–300 nm | — |
Thickness | 2–20 µm | — |
Thickness | 100–1000 µm | — |
Thickness | 5–50 µm | — |
Thickness | 5–25 µm | — |
Thickness | 5–15 µm | — |
Thickness | 50–450 mm | — |
Thickness | 0.5–4 µm | — |
Thickness | 20–200 nm | — |
Thickness | 200–2000 nm | — |
Voltage | 700–1200 V | — |
Thickness | 0.2–0.5 µm | — |
Pressure | 0.5–3 Torr | — |
Temperature | 13 -1K. | — |
Thickness | ≤ 100000000 cm | — |
Thickness | ≥ 4.5 µm | — |
Thickness | ≥ 4 µm | — |
Thickness | ≥ 1 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 3 µm | — |
Thickness | 1–3 µm | — |
Duration | 10–120 seconds | — |
gallium oxide
Ga₂O₃
anode multilayer metal
field plate multilayer metal
silicon
Si
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
| — |
gallium-oxide layer thickness (claimed range) | 1–5 nm | Ga₂O₃ |
AlGaN barrier layer thickness (claimed range) | 10–50 nm | AlGaN |
GaN cap layer thickness (claimed range) | 1–10 nm | GaN |
combined buffer + GaN conduction layer thickness (claimed minimum) | ≥ 4.5 micron | GaN |
insulating layer thickness between field plate extension and barrier layer (claimed range) | 100–300 nm | — |
Thickness | 2–20 µm | — |
Thickness | 100–1000 µm | — |
Thickness | 5–50 µm | — |
Thickness | 5–25 µm | — |
Thickness | 5–15 µm | — |
Thickness | 50–450 mm | — |
Thickness | 0.5–4 µm | — |
Thickness | 20–200 nm | — |
Thickness | 200–2000 nm | — |
Voltage | 700–1200 V | — |
Thickness | 0.2–0.5 µm | — |
Pressure | 0.5–3 Torr | — |
Temperature | 13 -1K. | — |
Thickness | ≤ 100000000 cm | — |
Thickness | ≥ 4.5 µm | — |
Thickness | ≥ 4 µm | — |
Thickness | ≥ 1 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 3 µm | — |
Thickness | 1–3 µm | — |
Duration | 10–120 seconds | — |
gallium oxide
Ga₂O₃
anode multilayer metal
field plate multilayer metal
silicon
Si
FIG. 7 as a function of silicon nitride thickness for four different field-plate lengths; M1374.70019US01-7-442
FIG. 13-1 E, the 30 passivation layer 120 may be etched to expose the underlying barrier layer 116 or cap layer 118 for the anode contact. The anode may then …
| — |
gallium-oxide layer thickness (claimed range) | 1–5 nm | Ga₂O₃ |
AlGaN barrier layer thickness (claimed range) | 10–50 nm | AlGaN |
GaN cap layer thickness (claimed range) | 1–10 nm | GaN |
combined buffer + GaN conduction layer thickness (claimed minimum) | ≥ 4.5 micron | GaN |
insulating layer thickness between field plate extension and barrier layer (claimed range) | 100–300 nm | — |
Thickness | 2–20 µm | — |
Thickness | 100–1000 µm | — |
Thickness | 5–50 µm | — |
Thickness | 5–25 µm | — |
Thickness | 5–15 µm | — |
Thickness | 50–450 mm | — |
Thickness | 0.5–4 µm | — |
Thickness | 20–200 nm | — |
Thickness | 200–2000 nm | — |
Voltage | 700–1200 V | — |
Thickness | 0.2–0.5 µm | — |
Pressure | 0.5–3 Torr | — |
Temperature | 13 -1K. | — |
Thickness | ≤ 100000000 cm | — |
Thickness | ≥ 4.5 µm | — |
Thickness | ≥ 4 µm | — |
Thickness | ≥ 1 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 3 µm | — |
Thickness | 1–3 µm | — |
Duration | 10–120 seconds | — |