Title: REDUCED P U NCHTHROUGH BREAKDOWN IN GALLIUM-NITRIDE TRANSISTORS GaN

ARMSTRONG; 7606 SW Florence Lane; 4191 NW 127th Avenue

Patent

Atlas literature

Patent

US 10,615,280

Title: REDUCED P U NCHTHROUGH BREAKDOWN IN GALLIUM-NITRIDE TRANSISTORS GaN

ARMSTRONG, Mark, THEN, Han Wui

28 September 2017·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 20 dependent

1
IndependentGaNGaNGaNGaN field effect transistor (fin, no polarization layer)
A gallium nitride (GaN) ﬁeld eﬀect transistor (FET),,, comprising: a buﬀer layer comprising gallium and nitrogen; a ﬁrst epitaxy layer, the ﬁrst epitaxy layer having a ﬁrst doping proﬁle; and a second epitaxy layer, the second epitaxy layer having a second doping proﬁle, wherein: the ﬁrst epitaxy layer is between the buﬀer layer and the second epitaxy la y er, and at least a portion of the second epitaxy layer forms a ﬁn. Currently amended
1. 2
  Dependent← claim 1GaN field effect transistor (fin, no polarization layer)
  The GaN FET of claim 1, wherein the GaN FET is a power FET. Original
2. 3
  Dependent← claim 1GaNGaNGaN field effect transistor (fin, no polarization layer)
  The GaN FET of claim 1, wherein the ﬁrst doping proﬁle is doped, and the second doping proﬁle is undoped. Original
3. 8
  Dependent← claim 1GaNGaNGaN field effect transistor (fin, no polarization layer)
  The GaN FET of claim 1, wherein the ﬁrst epitaxy layer is doped with a ﬁrst polarity, and the second epitaxy layer is doped with a second polarity. Previously presented
9
Independent
9-25. Canceled
25
Independent
Canceled
26
IndependentGaNGaNGaNpolarization layerGaN field effect transistor (finned polarization layer)
A gallium nitride (GaN) ﬁeld eﬀect transistor (FET), comprising: a buﬀer layer comprising gallium and nitrogen; a ﬁrst epitaxy layer, the ﬁrst epitaxy layer having a ﬁrst doping proﬁle; a second epitaxy layer, the second epitaxy layer having a second doping proﬁle; and a polarization layer, wherein: the ﬁrst epitaxy layer is between the buﬀer layer and the second epitaxy layer, the second epitaxy layer is between the ﬁrst epitaxy layer and the polarization layer, and at least a portion of the polarization layer forms a ﬁn. New
1. 27
  Dependent← claim 26GaN field effect transistor (finned polarization layer)
  The GaN FET of claim 26, wherein the GaN FET is a power FET. New
2. 28
  Dependent← claim 26GaNGaNGaN field effect transistor (finned polarization layer)
  The GaN FET of claim 26, wherein the ﬁrst doping proﬁle is doped, and the second doping proﬁle is undoped. New
3. 29
  Dependent← claim 26polarization layerGaN field effect transistor (finned polarization layer)
  The GaN FET of claim 26, wherein the polarization layer is partially planar, and wherein the polarization layer is etched beneath the gate. Original
4. 30
  Dependent← claim 26GaNGaNGaN field effect transistor (finned polarization layer)
  The GaN FET of claim 26, wherein the ﬁrst epitaxy layer is doped with a ﬁrst polarity, and the second epitaxy layer is doped with a second polarity. Original
5. 31
  Dependent← claim 26GaNGaN field effect transistor (finned polarization layer)
  The GaN FET of claim 26, wherein the second epitaxy layer is ﬁnned. Original
32
IndependentGaNGaNGaNcomputing device GaN FET (fin)
A computing device, comprising: a memory, and a gallium nitride (GaN) ﬁeld eﬀect transistor (FET), comprising: a buﬀer layer comprising gallium and nitrogen; a ﬁrst epitaxy layer, the ﬁrst epitaxy layer having a ﬁrst doping proﬁle; and a second epitaxy layer, the second epitaxy layer having a second doping proﬁle; wherein: the ﬁrst epitaxy layer is between the buﬀer layer and the second epitaxy layer, and at least a portion of the second epitaxy layer forms a ﬁn. New
1. 33
  Dependent← claim 32computing device GaN FET (fin)
  The computing device of claim 32, wherein the GaN FET is a power FET. New
2. 34
  Dependent← claim 32GaNGaNcomputing device GaN FET (fin)
  The computing device of claim 32, wherein the ﬁrst doping proﬁle is doped, and the second doping proﬁle is undoped. New
3. 35
  Dependent← claim 32polarization layercomputing device GaN FET (fin)
  The computing device of claim 32, further comprising a polarization layer above the second epitaxy layer. New
4. 39
  Dependent← claim 32GaNGaNcomputing device GaN FET (fin)
  The computing device of claim 32, wherein polarity, and the second epitaxy layer is doped
5. 40
  Dependent← claim 32polarization layercomputing device GaN FET (fin)
  The computing device of claim 32, wherein the polarization layer is planar. New the polarization layer is partially planar, and the gate. New the polarization layer is ﬁnned. New the ﬁrst epitaxy layer is doped with a ﬁrst with a second polarity. New the second epitaxy layer is ﬁnned. New

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN field effect transistor (fin, no polarization layer)

GaNundoped epitaxy fin

GaNdoped epitaxy

GaNbuffer

GaN field effect transistor (finned polarization layer)

polarization layerpolarization fin

GaNundoped epitaxy

Materials

Materials described outside the worked examples.

GaN buffer layer

GaN

Buffer Layer

Doped Epitaxy LayerUndoped Epitaxy Layer

polarization layer

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	20–100 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Title: REDUCED P U NCHTHROUGH BREAKDOWN IN GALLIUM-NITRIDE TRANSISTORS GaN | Matter42 Literature