GaN SEMICONDUCTOR DEVICE COMPRISING CARBON AND IRON

Atsushi ERA

Patent

Atlas literature

Patent

US 9,793,363

GaN SEMICONDUCTOR DEVICE COMPRISING CARBON AND IRON

Atsushi ERA

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 16 dependent

1
IndependentGaNGaNGaNAlxGayInzNGaN HEMT (claims 1-4): three GaN layers + electron supply layer
A semiconductor device comprising: a substrate; a ﬁrst G aN layer on the substrate and containing carbon; a second G aN layer on t h e ﬁrst G aN layer and containing Fe and carbon; a t hi rd G aN layer on t h e second G aN layer and containing Fe and carbon; and an electron supply layer on t h e third G aN layer and having a larger band gap t h an G aN, wherein an Fe concentration of the t hi rd G aN layer gradually decreases from an Fe concentration of t h e second G aN layer from the second G aN layer toward t h e electron supply layer and is higher than 1x10 1 5 cm 3 at a position of 100 nm deep from a bottom end of t he electron supply layer, a top end of t h e second G aN layer is deeper t h an 800 nm from t h e bottom end of t he electron supply layer, and a carbon concentration of the t hi rd G aN layer is lower t h an carbon concentrations of the ﬁrst and second G aN layer, and the Fe concentration of t h e second G aN layer is equal to or lower than 5x10 7 cm 3
1. 2
  Dependent← claim 1GaNGaN HEMT (claims 1-4): three GaN layers + electron supply layer
  The semiconductor device of claim 1, wherein the carbon concentration of t h e third G aN layer is lower t h an 2x10 1 6 cm 3
2. 3
  Dependent← claim 1GaNGaNGaN HEMT (claims 1-4): three GaN layers + electron supply layer
  The semiconductor device of claim 1, wherein the carbon concentrations of t h e ﬁrst and second G aN layers are higher t h an 2x10 1 6 cm 3
5
IndependentGaNGaNGaNAlxGayInzNGaN HEMT (claims 5-9): three GaN layers + electron supply layer, first GaN deeper than 800 nm
A semiconductor device comprising: a substrate; a ﬁrst G aN layer on the substrate and containing carbon; a second G aN layer on t h e ﬁrst G aN layer and containing Fe and carbon; a t h ird G aN la y er on t h e second G aN la y er and containing Fe and carbon; and an electron supply layer on t h e third G aN layer and having a larger band gap t h an G aN, wherein an Fe concentration of the t hi rd G aN layer gradually decreases from an Fe concentration of t h e second G aN layer from the second G aN layer toward t h e electron supply layer and is higher than 1 x101 5 cm -3 at a position of 100 nm deep from a bottom end of t he electron supply layer, a top end of t h e ﬁrst G aN layer is deeper than 800 nm from t h e bottom end of the electron supply layer, and carbon concentrations of t h e second and t hi rd G aN layers are lower t h an a carbon concentration of t h e ﬁrst G aN layer, and the Fe concentration of t h e second G aN layer is equal to or lower than 5x10 7 cm 3
1. 6
  Dependent← claim 5GaNGaNGaN HEMT (claims 5-9): three GaN layers + electron supply layer, first GaN deeper than 800 nm
  The semiconductor device of claim 5, wherein t h e carbon concentrations of the second and third G aN layers are lower t h an 2x10 1 6 cm3
2. 7
  Dependent← claim 5GaNGaN HEMT (claims 5-9): three GaN layers + electron supply layer, first GaN deeper than 800 nm
  The semiconductor device of claim 5, wherein the Fe concentration of t h e second G aN layer is lower t h an 1x10 7 cm
3. 8
  Dependent← claim 5GaNGaN HEMT (claims 5-9): three GaN layers + electron supply layer, first GaN deeper than 800 nm
  The semiconductor device of claim 5, wherein the carbon concentration of t h e ﬁrst G aN layer is higher t h an 2x10 1 6 cm 3
4. 9
  Dependent← claim 5GaNGaN HEMT (claims 5-9): three GaN layers + electron supply layer, first GaN deeper than 800 nm
  The semiconductor device of claim 5, wherein the carbon concentration of t h e ﬁrst G aN layer is higher t h an 5x10 1 6 cm 3
10
IndependentGaNGaNGaNAlxGayInzNGaN HEMT (claims 10-14): three GaN layers + electron supply layer, geometric depth constraints
A semiconductor device comprising: a substrate; a ﬁrst G aN layer on the substrate and containing carbon; a second G aN layer on t h e ﬁrst G aN layer and containing Fe and carbon; a t h ird G aN layer on t h e second G aN layer and containing Fe and carbon; and an electron supply layer on t h e third G aN layer and having a larger band gap t h an G aN, wherein an Fe concentration of the t h ird G aN layer gradually decreases from an Fe concentration of t h e second G aN layer from the second G aN layer toward t h e electron supply lay er and is higher than 1 x101 5 cm⁻³ at a p osition of 100 nm dee p from a bottom end of t he electron supply layer, a top end of the ﬁrst G aN layer is deeper than 500 nm from the bottom end of the third G aN layer, and a top end of the second G aN layer is deeper than 300 nm from the bottom end of the electron supply layer, and carbon concentrations of the second and third G aN layers are lower t h an a carbon concentration of the ﬁrst G aN layer.
1. 11
  Dependent← claim 10GaNGaNGaN HEMT (claims 10-14): three GaN layers + electron supply layer, geometric depth constraints
  The semiconductor device of claim 10, wherein the carbon concentrations of the second and third G aN layers are lower t h an 2x10 1 6 cm3
15
IndependentGaNGaNAlxGayInzNGaN HEMT (claims 15-16): two GaN layers both Fe+C doped + electron supply layer
A semiconductor device comprising: a substrate; a ﬁrst G aN layer on the substrate and containing Fe and carbon; a second G aN layer on the ﬁrst G aN layer and containing Fe and carbon; and an electron supply layer on the second G aN layer and having a larger band gap than G aN, wherein a Fe concentration of the second G aN layer gradually decreases from an Fe concentration of the ﬁrst G aN layer from the ﬁrst G aN layer toward the electron supply layer and is higher than 1x101 5 cm- 3 at a position of 100 nm deep from a bottom end of the electron supply layer, a carbon concentration of the ﬁrst G aN layer is equal to or higher than 1x10 7 cm 3, a top end of the ﬁrst G aN layer is deeper than 800 nm from the bottom end of the electron supp ly la yer, and a carbon concentration of the second GaN layer is lower than the carbon concentration of the ﬁrst GaN layer.
1. 16
  Dependent← claim 15GaNGaN HEMT (claims 15-16): two GaN layers both Fe+C doped + electron supply layer
  The semiconductor device of claim 15, wherein the carbon concentration of the second GaN layer is lower than 2x10 1 6 cm 3
17
IndependentGaNAlxGayInzNGaN HEMT (claims 17-21): single GaN layer with spatial Fe and C regions + electron supply layer
A semiconductor device comprising: a substrate; a GaN layer on the substrate and containing Fe and carbon; and an electron supply layer on the GaN layer and having a larger band gap than GaN, wherein a Fe concentration of the GaN layer at a position of 100 nm deep from a bottom end of the electron supply layer is higher than 1x10 1 5 cm 3, the GaN layer includes a ﬁrst region located between the bottom end of the electron supply layer and a position of 800 nm deep from the bottom end of the electron supply layer, and a second region located deeper than 800 nm from the bottom end of the electron supply layer, a carbon concentration of the ﬁrst region is lower than 2x10 1 6 cm⁻³, and a carbon concentration of the second region is higher than 2x 101 6 cm⁻³
1. 18
  Dependent← claim 17GaNGaN HEMT (claims 17-21): single GaN layer with spatial Fe and C regions + electron supply layer
  The semiconductor device of claim 17, wherein the second region includes a third region containing Fe.
2. 21
  Dependent← claim 17GaNGaN HEMT (claims 17-21): single GaN layer with spatial Fe and C regions + electron supply layer
  The semiconductor device of claim 17, wherein deeper than 800 nm from the bottom end of the entration higher than 5x 1016cm 3. a Fe concentration of the third region is lower the second region includes a region located electron supply layer and having a carbon conc

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN HEMT (claims 1-4): three GaN layers + electron supply layer

AlxGayInzNelectron supply layer

GaNthird GaN layer (graded Fe, lower C)

GaNsecond GaN layer (Fe+C, higher C)

GaNfirst GaN buffer (C-doped)

substratesubstrate

GaN HEMT (claims 5-9): three GaN layers + electron supply layer, first GaN deeper than 800 nm

Materials

Materials described outside the worked examples.

first GaN layer (C-doped, no Fe)

GaN

Buffer/Semi-Insulating Layer Containing Carbon

Buffer Layer Containing Fe And CarbonTransition Layer With Graded Fe Concentration And Lower Carbon

electron supply layer

AlxGayInzN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN SEMICONDUCTOR DEVICE COMPRISING CARBON AND IRON | Matter42 Literature