Vertical-Side Solder Method and Package for Power GaN Devices

Zhanming Li

Patent

Atlas literature

Patent

US 10,939,553

Vertical-Side Solder Method and Package for Power GaN Devices

Zhanming Li

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 18

FIG. 68

FIG. 88

FIG. 108

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 14 dependent

1
IndependentGaNsemiconductor device packaged on PCB
A semiconductor device packaged on a printed circuit board (PCB), comprising: metal contact pads disposed on a bottom side of the semiconductor device, wherein the bottom side of the semiconductor device substantially faces the PCB and the metal contact pads are soldered to respective metal traces on a surface of the PCB; at least one metal trace of the PCB that extends beyond an area of the PCB covered by the semiconductor device; wherein the semiconductor device has a pl uralit y of vertical sides that are substantially perp endicular to the bottom side and a back side that o pp oses the bottom side; wherein the at least one metal trace of the PCB is soldered to at least one [[of]]side of the semiconductor device selected from a said vertical side and [[a]]the back side. Currently amended
1. 2
  Dependent← claim 1semiconductor device packaged on PCB
  The semiconductor device of claim 1, wherein the at least one metal trace of the PCB is soldered to a said vertical side and the back side of the semiconductor device. Currently amended
2. 4
  Dependent← claim 1GaNsemiconductor device packaged on PCB
  The semiconductor device of claim 1, wherein the semiconductor device is a GaN semiconductor device. Original
3. 7
  Dependent← claim 1semiconductor device packaged on PCB
  The semiconductor device of claim 1, wherein the semiconductor device is soldered to the PCB according to a surface mount technology. Original
9
Independentsemiconductor device packaged on PCB
A method for packaging a semiconductor device, comprising: providing a printed circuit board (PCB) having metal traces on a PCB surface at locations corresponding to respective metal contact pads disposed on a bottom side of the semiconductor device, wherein at least one metal trace of the PCB extends beyond an area covered by the semiconductor device; wherein the semiconductor device has a plurality of vertical sides that are substantially perpendicular to the bottom side and a back side that opposes the bottom side; soldering the metal contact pads of the semiconductor device to the respective metal traces on the PCB; soldering the at least one metal trace of the PCB so that the solder contacts at least one side of the semiconductor device selected from a said vertical side and [[a]]the back side. Currently amended
1. 10
  Dependent← claim 9semiconductor device packaged on PCB
  The method of claim 9, comprising soldering the at least one metal trace of the PCB so that the solder contacts a said vertical side and the back side of the semiconductor device. Currently amended
2. 11
  Dependent← claim 9semiconductor device packaged on PCB
  The method of claim 9, comprising disposing a metal on the back side of the semiconductor device. Previously presented
3. 12
  Dependent← claim 9GaNsemiconductor device packaged on PCB
  The method of claim 9, wherein the semiconductor device is a GaN semiconductor device. Original
4. 15
  Dependent← claim 9semiconductor device packaged on PCB
  The method of claim 9, comprising soldering the semiconductor device to the PCB according to a surface mount technology. Original

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

semiconductor device packaged on PCB

Sisubstrate

GaNsemiconductor body

solderdevice bottom contact pads

GaN HEMT device packaged on PCB

Sisubstrate

GaNGaN HEMT body

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Semiconductor Device Material

silicon

Substrate

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	0.5–1 mm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Vertical-Side Solder Method and Package for Power GaN Devices | Matter42 Literature