Patent
Atlas literature
Patent
US 12,581,772 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Energetic barrier heights to electron loss to
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 5 provides an example schematic of an optoelec- tronic device 100 or LED as described herein. In this example, quantum well layers 110 are positioned in …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device comprising: a well layer of ordered AlxIn₁-xP quantum wells; a barrier layer of ordered AlxIn₁-xP quantum barriers in electronic communication with said well layer; wherein said well layer and said barrier layer are strain balanced; wherein said well layers have an Al fraction less than the Al fraction of said barrier layers.
The device of claim 1, wherein the well layer comprises CuPt atomically ordered AlxIn₁-xP quantum wells.
The device of claim 1, wherein the well layer, the barrier layer or both are zero order.
The device of claim 1 comprising a plurality of well layers and a plurality of barrier layers.
The device of claim 1 further comprising one or more AlxIn₁-xP clad layers.
The device of claim 1 further comprising a disordered AlxIn₁-xP n-type clad layer and a disordered AlxIn₁-xP p-type clad layer.
The device of claim 1, wherein strain balanced refers to a net strain between said well layers and said barrier layers is substantially zero.
The device of claim 1, wherein said well layers, said barrier layers or both are capable of being grown on a GaAs substrate.
The device of claim 1, wherein said well layers, said barrier layers or both further comprise Ga and have the formula (Al₁-yGay)xIn₁-xP.
The device of claim 1, wherein the device is capable of selectively emitting light at a wavelength selected from the range of 560 nm to 650 nm.
The device of claim 1, wherein the device is a light emitting diode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with strain balanced AlxIn₁-xP quantum wells
light emitting diode
Materials described outside the worked examples.
ordered AlxIn₁-xP quantum well
AlxIn₁-xP
GaAs substrate
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED emission wavelength range (amber to red) | 560–650 nm | — |
narrow amber LED emission range | 570–590 nm | — |
narrow red LED emission range |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL LIFT-OFF PROCESSED GAAS THIN-FILM SOLAR CELLS INTEGRATED WITH NON-TRACKING MINI-COMPOUND PARABOLIC CONCENTRATORS
METHOD FOR PREPARING INDIUM PHOSPHIDE NANOCRYSTAL BY USING NOVEL PHOSPHORUS PRECURSOR AND INDIUM PHOSPHIDE NANOCRYSTAL PREPARED BY THE SAME
Patent
Atlas literature
Patent
US 12,581,772 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Energetic barrier heights to electron loss to
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 5 provides an example schematic of an optoelec- tronic device 100 or LED as described herein. In this example, quantum well layers 110 are positioned in …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device comprising: a well layer of ordered AlxIn₁-xP quantum wells; a barrier layer of ordered AlxIn₁-xP quantum barriers in electronic communication with said well layer; wherein said well layer and said barrier layer are strain balanced; wherein said well layers have an Al fraction less than the Al fraction of said barrier layers.
The device of claim 1, wherein the well layer comprises CuPt atomically ordered AlxIn₁-xP quantum wells.
The device of claim 1, wherein the well layer, the barrier layer or both are zero order.
The device of claim 1 comprising a plurality of well layers and a plurality of barrier layers.
The device of claim 1 further comprising one or more AlxIn₁-xP clad layers.
The device of claim 1 further comprising a disordered AlxIn₁-xP n-type clad layer and a disordered AlxIn₁-xP p-type clad layer.
The device of claim 1, wherein strain balanced refers to a net strain between said well layers and said barrier layers is substantially zero.
The device of claim 1, wherein said well layers, said barrier layers or both are capable of being grown on a GaAs substrate.
The device of claim 1, wherein said well layers, said barrier layers or both further comprise Ga and have the formula (Al₁-yGay)xIn₁-xP.
The device of claim 1, wherein the device is capable of selectively emitting light at a wavelength selected from the range of 560 nm to 650 nm.
The device of claim 1, wherein the device is a light emitting diode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with strain balanced AlxIn₁-xP quantum wells
light emitting diode
Materials described outside the worked examples.
ordered AlxIn₁-xP quantum well
AlxIn₁-xP
GaAs substrate
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED emission wavelength range (amber to red) | 560–650 nm | — |
narrow amber LED emission range | 570–590 nm | — |
narrow red LED emission range |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL LIFT-OFF PROCESSED GAAS THIN-FILM SOLAR CELLS INTEGRATED WITH NON-TRACKING MINI-COMPOUND PARABOLIC CONCENTRATORS
METHOD FOR PREPARING INDIUM PHOSPHIDE NANOCRYSTAL BY USING NOVEL PHOSPHORUS PRECURSOR AND INDIUM PHOSPHIDE NANOCRYSTAL PREPARED BY THE SAME
Patent
Atlas literature
Patent
US 12,581,772 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Energetic barrier heights to electron loss to
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 5 provides an example schematic of an optoelec- tronic device 100 or LED as described herein. In this example, quantum well layers 110 are positioned in …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device comprising: a well layer of ordered AlxIn₁-xP quantum wells; a barrier layer of ordered AlxIn₁-xP quantum barriers in electronic communication with said well layer; wherein said well layer and said barrier layer are strain balanced; wherein said well layers have an Al fraction less than the Al fraction of said barrier layers.
The device of claim 1, wherein the well layer comprises CuPt atomically ordered AlxIn₁-xP quantum wells.
The device of claim 1, wherein the well layer, the barrier layer or both are zero order.
The device of claim 1 comprising a plurality of well layers and a plurality of barrier layers.
The device of claim 1 further comprising one or more AlxIn₁-xP clad layers.
The device of claim 1 further comprising a disordered AlxIn₁-xP n-type clad layer and a disordered AlxIn₁-xP p-type clad layer.
The device of claim 1, wherein strain balanced refers to a net strain between said well layers and said barrier layers is substantially zero.
The device of claim 1, wherein said well layers, said barrier layers or both are capable of being grown on a GaAs substrate.
The device of claim 1, wherein said well layers, said barrier layers or both further comprise Ga and have the formula (Al₁-yGay)xIn₁-xP.
The device of claim 1, wherein the device is capable of selectively emitting light at a wavelength selected from the range of 560 nm to 650 nm.
The device of claim 1, wherein the device is a light emitting diode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with strain balanced AlxIn₁-xP quantum wells
light emitting diode
Materials described outside the worked examples.
ordered AlxIn₁-xP quantum well
AlxIn₁-xP
GaAs substrate
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED emission wavelength range (amber to red) | 560–650 nm | — |
narrow amber LED emission range | 570–590 nm | — |
narrow red LED emission range |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL LIFT-OFF PROCESSED GAAS THIN-FILM SOLAR CELLS INTEGRATED WITH NON-TRACKING MINI-COMPOUND PARABOLIC CONCENTRATORS
METHOD FOR PREPARING INDIUM PHOSPHIDE NANOCRYSTAL BY USING NOVEL PHOSPHORUS PRECURSOR AND INDIUM PHOSPHIDE NANOCRYSTAL PREPARED BY THE SAME
Patent
Atlas literature
Patent
US 12,581,772 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Energetic barrier heights to electron loss to
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 5 provides an example schematic of an optoelec- tronic device 100 or LED as described herein. In this example, quantum well layers 110 are positioned in …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device comprising: a well layer of ordered AlxIn₁-xP quantum wells; a barrier layer of ordered AlxIn₁-xP quantum barriers in electronic communication with said well layer; wherein said well layer and said barrier layer are strain balanced; wherein said well layers have an Al fraction less than the Al fraction of said barrier layers.
The device of claim 1, wherein the well layer comprises CuPt atomically ordered AlxIn₁-xP quantum wells.
The device of claim 1, wherein the well layer, the barrier layer or both are zero order.
The device of claim 1 comprising a plurality of well layers and a plurality of barrier layers.
The device of claim 1 further comprising one or more AlxIn₁-xP clad layers.
The device of claim 1 further comprising a disordered AlxIn₁-xP n-type clad layer and a disordered AlxIn₁-xP p-type clad layer.
The device of claim 1, wherein strain balanced refers to a net strain between said well layers and said barrier layers is substantially zero.
The device of claim 1, wherein said well layers, said barrier layers or both are capable of being grown on a GaAs substrate.
The device of claim 1, wherein said well layers, said barrier layers or both further comprise Ga and have the formula (Al₁-yGay)xIn₁-xP.
The device of claim 1, wherein the device is capable of selectively emitting light at a wavelength selected from the range of 560 nm to 650 nm.
The device of claim 1, wherein the device is a light emitting diode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with strain balanced AlxIn₁-xP quantum wells
light emitting diode
Materials described outside the worked examples.
ordered AlxIn₁-xP quantum well
AlxIn₁-xP
GaAs substrate
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED emission wavelength range (amber to red) | 560–650 nm | — |
narrow amber LED emission range | 570–590 nm | — |
narrow red LED emission range |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
EPITAXIAL LIFT-OFF PROCESSED GAAS THIN-FILM SOLAR CELLS INTEGRATED WITH NON-TRACKING MINI-COMPOUND PARABOLIC CONCENTRATORS
METHOD FOR PREPARING INDIUM PHOSPHIDE NANOCRYSTAL BY USING NOVEL PHOSPHORUS PRECURSOR AND INDIUM PHOSPHIDE NANOCRYSTAL PREPARED BY THE SAME
(Al₁-yGay)xIn₁-xP well/barrier
(Al₁-yGay)xIn₁-xP
(AlxGa₁-x)0.5In0.5P
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
| 610–630 nm |
| — |
Thickness | 591–621 nm | — |
Thickness | 570–605 nm | — |
Thickness | 605–635 nm | — |
Temperature | 25–125 °C | — |
Thickness | 25–30 nm | — |
Cited non-patent literature · 3
(Al₁-yGay)xIn₁-xP well/barrier
(Al₁-yGay)xIn₁-xP
(AlxGa₁-x)0.5In0.5P
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
| 610–630 nm |
| — |
Thickness | 591–621 nm | — |
Thickness | 570–605 nm | — |
Thickness | 605–635 nm | — |
Temperature | 25–125 °C | — |
Thickness | 25–30 nm | — |
Cited non-patent literature · 3
(Al₁-yGay)xIn₁-xP well/barrier
(Al₁-yGay)xIn₁-xP
(AlxGa₁-x)0.5In0.5P
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
| 610–630 nm |
| — |
Thickness | 591–621 nm | — |
Thickness | 570–605 nm | — |
Thickness | 605–635 nm | — |
Temperature | 25–125 °C | — |
Thickness | 25–30 nm | — |
Cited non-patent literature · 3
(Al₁-yGay)xIn₁-xP well/barrier
(Al₁-yGay)xIn₁-xP
(AlxGa₁-x)0.5In0.5P
FIG. 2B. AlxIn₁-xP bandgap energies as a function of Al fraction and degree of ordering. The compositions of the cladding (C), quantum well (W) and quantum …
FIG. 3A. Cross-sectional TEM image of an AlxIn₁-xP LED/metamorphic buffer/GaAs substrate stack.
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 4A. Modulated reflectance (top), room temperature photoluminescence (middle) and variable tem- 35 perature photoluminescence (bottom) spectra from an …
FIG. 15 2C. Conduction band alignment (top), valence band align- ment (middle) and bandgap energies (bottom) for device example 1, in which ordering in the …
| 610–630 nm |
| — |
Thickness | 591–621 nm | — |
Thickness | 570–605 nm | — |
Thickness | 605–635 nm | — |
Temperature | 25–125 °C | — |
Thickness | 25–30 nm | — |
Cited non-patent literature · 3
