Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2D SVG 15126592.09-16-2016.IVRA₈YCERXEAPX2.ABST.1.48.233.2892.279.2921.svg 0.097 0.153 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for integrating a thin-film solar cell with non-tracking miniconcentrators, said method comprising: providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the at least one protection layer; depositing a photoactive cell on the sacrificial layer, wherein the photoactive cell is inverted; forming a patterned metal layer comprising an array of mesas on the photoactive cell[[s]] by a photolithography method, wherein the mesas are separated by one or more trenches that extend through the patterned metal la y er and the photoactive cell to the sacrificial la yer; bonding the patterned metal layer to a metallized surface of a plastic sheet[[,]]; etching the sacrificial layer with one or more etch steps that remove the photoactive cell from the growth substrate to form thin film solar cells bonded to the plastic sheet; dicing the thin film solar cells bonded to the plastic sheet along the one or more trenches; fabricating compound parabolic concentrators from a plastic material; and transferring the thin film solar cells onto the compound parabolic concentrators by an adhesive-free bonding step to form an integrated thin film solar cell and compound parabolic concentrator. Currently amended
The method of claim 1, wherein the growth substrate comprises GaAs or I nP. Original
The method of claim 1, wherein the at least one protection layer is lattice matched with the growth substrate. Original
The method of claim 1, wherein at least one of the protection layer, sacrificial layer, or photoactive cell is deposited by at least one process chosen from gas source molecular beam epitaxy (GSMBE), metallo-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (H V PE), solid source molecular beam epitaxy (SSMBE), and chemical beam epitaxy. Original
The method of claim 1, wherein the at least one protection layer comprises a buffer layer, an etch-stop layer, or combinations thereof. Original
The method of claim 1, wherein said photolithography method comprises depositing a metal layer on the photoactive cell; depositing a mask on top of the metal layer for mesa etching; and performing at least one etch step through said mask to form _ the mesas separated b y the one or more trenches. Currently amended
The method o claim 1, wherein the sacrificial layer comprises A I As, and the one or more etch steps comprise contacting said A I As with HF. Currently amended
The method of claim 1, wherein the one or more trenches have a width ranging from 100 pm to 500 pm. Currently amended
The method of claim 1, wherein the photoactive cell comprises a multi-junction cell. Currently amended
The method of claim 1, wherein the step of bonding the patterned metal layer to the plastic sheet comprises a direct attachment method selected from cold-welding, thermally assisted cold-welding, and thermocompression bonding. Currently amended
The method o claim 1, wherein the thin film solar cells bonded to the plastic sheet are diced using a laser. Currently amended
The method of claim 1, wherein transferring the thin film solar cells onto the compound parabolic concentrators comprises attaching the thin-film solar cells to an elastomeric stamp and transfer printing the solar cells onto a metallized surface of the compound parabolic concentrators. Currently amended
The method of claim 1, wherein the plastic material has a glass transition temperature below 100 °C. Currently amended
The method of claim 1, wherein the plastic material comprises polyethylene terephthalate glycol-modified. Currently amended
The method of claim 1, wherein fabricatin g the compound parabolic concentrators comprises at least one thermoformin g process, wherein the at least one thermoforming process comprises mounting the plastic material on a negative compound-parabola shaped vacuum mold. Currently amended
Canceled
Canceled
The method o claim 1, wherein the plastic material is coated with at least one wetting layer and at least one metal reflecting layer. 27. The method of claim 26, wherein the at least one wetting layer comprises Ge. Original
The method of claim 26, wherein the at least one metal reflecting layer comprises Ag. Original
The method of claim 26, wherein the at least one wetting layer and the at least one metal reflecting layer are deposited using electron- beam, thermal evaporation, or combinations thereof. Currently amended
A photovoltaic device comprising a thin-film solar integrated with non-tracking mini-compound parabolic concentrators, comprising: a thin-film solar cell bonded to a plastic compound parabolic concentrator, wherein the plastic compound parabolic concentrator comprise two parabolas tilted at an angle equal to the acceptance angle of the compound parabolic concentrator, wherein the solar cell is able to collect light at angles broader than the acceptance angle of the compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the concentrators are designed such that the line of focal point is located right at the center of the concentrator opening plane. Withdrawn
The photovoltaic device of claim 30, wherein there is no adhesive material between thin-film solar cell and the plastic compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the at least one photoactive cell comprises a single junction or multi-junction cell. 34. The photovoltaic device of claim 30, wherein the plastic compound parabolic concentrator has at least one surface that is metallized with at least one metal chosen from Au, Ag, Pt, Pd, Ni, and Cu. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator has a glass transition temperature below 100 C. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator comprises polyethylene terephthalate glycol-modified. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thin-film solar cell integrated with compound parabolic concentrator
Materials described outside the worked examples.
photoactive cell (thin-film solar cell)
sacrificial layer
plastic material (for CPC and plastic sheet)
GaAs
InP
AlAs
InGaAs
AlInP
GaInP
InAs
InSb
GaP
AlP
GaSb
AlSb
metallization layer (Au, Ag, Pt, Pd, Ni, or Cu)
polyethylene terephthalate glycol-modified (PETG)
Ge (wetting layer)
Ge
Ag (metal reflecting layer)
Ag
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Power Conversion Efficiency | 28 | GaAs |
Energy Harvesting Enhancement Factor | 2.8 | — |
Pressure | 0.00001 torr | — |
Thickness | 2–200 nm | — |
Thickness | 4–100 nm | — |
Thickness | 4–80 nm | — |
Thickness | 4–25 nm | — |
Thickness | 200–500 nm | — |
Thickness | 300–900 nm | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 20–100 nm | — |
Thickness | 100–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≥ 1 nm | — |
Temperature | ≤ 1 °C | — |
Related documents with shared materials, methods, properties, or citations.
Photon-assisted ultrafast electron-hole plasma expansion in direct band semiconductors
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A MONOCRYSTALLINE INDIUM PHOSPHIDE
Computational study of III-V direct-gap semiconductors for thermoradiative cell applications
Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory
Dynamics of local photoconductivity in GaAs and InP investigated by THz SNOM
STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM TRAPEZOID ISOLATION
STRAIN BALANCED DIRECT BANDGAP ALUMINUM INDIUM PHOSPHIDE QUANTUM WELLS FOR LIGHT EMITTING DIODES
Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots
Recent advances in InGaAs/InP single-photon detectors
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
AlInGaAs/InGaAsP/InP EDGE EMITTING SEMICONDUCTOR LASER INCLUDING MULTIPLE MONOLITHIC LASER DIODES
APPARATUS AND METHODS TO CREATE AN INDIUM GALLIUM ARSENIDE ACTIVE CHANNEL HAVING INDIUM RICH SURFACES
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2D SVG 15126592.09-16-2016.IVRA₈YCERXEAPX2.ABST.1.48.233.2892.279.2921.svg 0.097 0.153 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for integrating a thin-film solar cell with non-tracking miniconcentrators, said method comprising: providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the at least one protection layer; depositing a photoactive cell on the sacrificial layer, wherein the photoactive cell is inverted; forming a patterned metal layer comprising an array of mesas on the photoactive cell[[s]] by a photolithography method, wherein the mesas are separated by one or more trenches that extend through the patterned metal la y er and the photoactive cell to the sacrificial la yer; bonding the patterned metal layer to a metallized surface of a plastic sheet[[,]]; etching the sacrificial layer with one or more etch steps that remove the photoactive cell from the growth substrate to form thin film solar cells bonded to the plastic sheet; dicing the thin film solar cells bonded to the plastic sheet along the one or more trenches; fabricating compound parabolic concentrators from a plastic material; and transferring the thin film solar cells onto the compound parabolic concentrators by an adhesive-free bonding step to form an integrated thin film solar cell and compound parabolic concentrator. Currently amended
The method of claim 1, wherein the growth substrate comprises GaAs or I nP. Original
The method of claim 1, wherein the at least one protection layer is lattice matched with the growth substrate. Original
The method of claim 1, wherein at least one of the protection layer, sacrificial layer, or photoactive cell is deposited by at least one process chosen from gas source molecular beam epitaxy (GSMBE), metallo-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (H V PE), solid source molecular beam epitaxy (SSMBE), and chemical beam epitaxy. Original
The method of claim 1, wherein the at least one protection layer comprises a buffer layer, an etch-stop layer, or combinations thereof. Original
The method of claim 1, wherein said photolithography method comprises depositing a metal layer on the photoactive cell; depositing a mask on top of the metal layer for mesa etching; and performing at least one etch step through said mask to form _ the mesas separated b y the one or more trenches. Currently amended
The method o claim 1, wherein the sacrificial layer comprises A I As, and the one or more etch steps comprise contacting said A I As with HF. Currently amended
The method of claim 1, wherein the one or more trenches have a width ranging from 100 pm to 500 pm. Currently amended
The method of claim 1, wherein the photoactive cell comprises a multi-junction cell. Currently amended
The method of claim 1, wherein the step of bonding the patterned metal layer to the plastic sheet comprises a direct attachment method selected from cold-welding, thermally assisted cold-welding, and thermocompression bonding. Currently amended
The method o claim 1, wherein the thin film solar cells bonded to the plastic sheet are diced using a laser. Currently amended
The method of claim 1, wherein transferring the thin film solar cells onto the compound parabolic concentrators comprises attaching the thin-film solar cells to an elastomeric stamp and transfer printing the solar cells onto a metallized surface of the compound parabolic concentrators. Currently amended
The method of claim 1, wherein the plastic material has a glass transition temperature below 100 °C. Currently amended
The method of claim 1, wherein the plastic material comprises polyethylene terephthalate glycol-modified. Currently amended
The method of claim 1, wherein fabricatin g the compound parabolic concentrators comprises at least one thermoformin g process, wherein the at least one thermoforming process comprises mounting the plastic material on a negative compound-parabola shaped vacuum mold. Currently amended
Canceled
Canceled
The method o claim 1, wherein the plastic material is coated with at least one wetting layer and at least one metal reflecting layer. 27. The method of claim 26, wherein the at least one wetting layer comprises Ge. Original
The method of claim 26, wherein the at least one metal reflecting layer comprises Ag. Original
The method of claim 26, wherein the at least one wetting layer and the at least one metal reflecting layer are deposited using electron- beam, thermal evaporation, or combinations thereof. Currently amended
A photovoltaic device comprising a thin-film solar integrated with non-tracking mini-compound parabolic concentrators, comprising: a thin-film solar cell bonded to a plastic compound parabolic concentrator, wherein the plastic compound parabolic concentrator comprise two parabolas tilted at an angle equal to the acceptance angle of the compound parabolic concentrator, wherein the solar cell is able to collect light at angles broader than the acceptance angle of the compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the concentrators are designed such that the line of focal point is located right at the center of the concentrator opening plane. Withdrawn
The photovoltaic device of claim 30, wherein there is no adhesive material between thin-film solar cell and the plastic compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the at least one photoactive cell comprises a single junction or multi-junction cell. 34. The photovoltaic device of claim 30, wherein the plastic compound parabolic concentrator has at least one surface that is metallized with at least one metal chosen from Au, Ag, Pt, Pd, Ni, and Cu. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator has a glass transition temperature below 100 C. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator comprises polyethylene terephthalate glycol-modified. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thin-film solar cell integrated with compound parabolic concentrator
Materials described outside the worked examples.
photoactive cell (thin-film solar cell)
sacrificial layer
plastic material (for CPC and plastic sheet)
GaAs
InP
AlAs
InGaAs
AlInP
GaInP
InAs
InSb
GaP
AlP
GaSb
AlSb
metallization layer (Au, Ag, Pt, Pd, Ni, or Cu)
polyethylene terephthalate glycol-modified (PETG)
Ge (wetting layer)
Ge
Ag (metal reflecting layer)
Ag
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Power Conversion Efficiency | 28 | GaAs |
Energy Harvesting Enhancement Factor | 2.8 | — |
Pressure | 0.00001 torr | — |
Thickness | 2–200 nm | — |
Thickness | 4–100 nm | — |
Thickness | 4–80 nm | — |
Thickness | 4–25 nm | — |
Thickness | 200–500 nm | — |
Thickness | 300–900 nm | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 20–100 nm | — |
Thickness | 100–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≥ 1 nm | — |
Temperature | ≤ 1 °C | — |
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Photon-assisted ultrafast electron-hole plasma expansion in direct band semiconductors
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A MONOCRYSTALLINE INDIUM PHOSPHIDE
Computational study of III-V direct-gap semiconductors for thermoradiative cell applications
Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory
Dynamics of local photoconductivity in GaAs and InP investigated by THz SNOM
STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM TRAPEZOID ISOLATION
STRAIN BALANCED DIRECT BANDGAP ALUMINUM INDIUM PHOSPHIDE QUANTUM WELLS FOR LIGHT EMITTING DIODES
Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots
Recent advances in InGaAs/InP single-photon detectors
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
AlInGaAs/InGaAsP/InP EDGE EMITTING SEMICONDUCTOR LASER INCLUDING MULTIPLE MONOLITHIC LASER DIODES
APPARATUS AND METHODS TO CREATE AN INDIUM GALLIUM ARSENIDE ACTIVE CHANNEL HAVING INDIUM RICH SURFACES
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2D SVG 15126592.09-16-2016.IVRA₈YCERXEAPX2.ABST.1.48.233.2892.279.2921.svg 0.097 0.153 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for integrating a thin-film solar cell with non-tracking miniconcentrators, said method comprising: providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the at least one protection layer; depositing a photoactive cell on the sacrificial layer, wherein the photoactive cell is inverted; forming a patterned metal layer comprising an array of mesas on the photoactive cell[[s]] by a photolithography method, wherein the mesas are separated by one or more trenches that extend through the patterned metal la y er and the photoactive cell to the sacrificial la yer; bonding the patterned metal layer to a metallized surface of a plastic sheet[[,]]; etching the sacrificial layer with one or more etch steps that remove the photoactive cell from the growth substrate to form thin film solar cells bonded to the plastic sheet; dicing the thin film solar cells bonded to the plastic sheet along the one or more trenches; fabricating compound parabolic concentrators from a plastic material; and transferring the thin film solar cells onto the compound parabolic concentrators by an adhesive-free bonding step to form an integrated thin film solar cell and compound parabolic concentrator. Currently amended
The method of claim 1, wherein the growth substrate comprises GaAs or I nP. Original
The method of claim 1, wherein the at least one protection layer is lattice matched with the growth substrate. Original
The method of claim 1, wherein at least one of the protection layer, sacrificial layer, or photoactive cell is deposited by at least one process chosen from gas source molecular beam epitaxy (GSMBE), metallo-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (H V PE), solid source molecular beam epitaxy (SSMBE), and chemical beam epitaxy. Original
The method of claim 1, wherein the at least one protection layer comprises a buffer layer, an etch-stop layer, or combinations thereof. Original
The method of claim 1, wherein said photolithography method comprises depositing a metal layer on the photoactive cell; depositing a mask on top of the metal layer for mesa etching; and performing at least one etch step through said mask to form _ the mesas separated b y the one or more trenches. Currently amended
The method o claim 1, wherein the sacrificial layer comprises A I As, and the one or more etch steps comprise contacting said A I As with HF. Currently amended
The method of claim 1, wherein the one or more trenches have a width ranging from 100 pm to 500 pm. Currently amended
The method of claim 1, wherein the photoactive cell comprises a multi-junction cell. Currently amended
The method of claim 1, wherein the step of bonding the patterned metal layer to the plastic sheet comprises a direct attachment method selected from cold-welding, thermally assisted cold-welding, and thermocompression bonding. Currently amended
The method o claim 1, wherein the thin film solar cells bonded to the plastic sheet are diced using a laser. Currently amended
The method of claim 1, wherein transferring the thin film solar cells onto the compound parabolic concentrators comprises attaching the thin-film solar cells to an elastomeric stamp and transfer printing the solar cells onto a metallized surface of the compound parabolic concentrators. Currently amended
The method of claim 1, wherein the plastic material has a glass transition temperature below 100 °C. Currently amended
The method of claim 1, wherein the plastic material comprises polyethylene terephthalate glycol-modified. Currently amended
The method of claim 1, wherein fabricatin g the compound parabolic concentrators comprises at least one thermoformin g process, wherein the at least one thermoforming process comprises mounting the plastic material on a negative compound-parabola shaped vacuum mold. Currently amended
Canceled
Canceled
The method o claim 1, wherein the plastic material is coated with at least one wetting layer and at least one metal reflecting layer. 27. The method of claim 26, wherein the at least one wetting layer comprises Ge. Original
The method of claim 26, wherein the at least one metal reflecting layer comprises Ag. Original
The method of claim 26, wherein the at least one wetting layer and the at least one metal reflecting layer are deposited using electron- beam, thermal evaporation, or combinations thereof. Currently amended
A photovoltaic device comprising a thin-film solar integrated with non-tracking mini-compound parabolic concentrators, comprising: a thin-film solar cell bonded to a plastic compound parabolic concentrator, wherein the plastic compound parabolic concentrator comprise two parabolas tilted at an angle equal to the acceptance angle of the compound parabolic concentrator, wherein the solar cell is able to collect light at angles broader than the acceptance angle of the compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the concentrators are designed such that the line of focal point is located right at the center of the concentrator opening plane. Withdrawn
The photovoltaic device of claim 30, wherein there is no adhesive material between thin-film solar cell and the plastic compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the at least one photoactive cell comprises a single junction or multi-junction cell. 34. The photovoltaic device of claim 30, wherein the plastic compound parabolic concentrator has at least one surface that is metallized with at least one metal chosen from Au, Ag, Pt, Pd, Ni, and Cu. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator has a glass transition temperature below 100 C. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator comprises polyethylene terephthalate glycol-modified. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thin-film solar cell integrated with compound parabolic concentrator
Materials described outside the worked examples.
photoactive cell (thin-film solar cell)
sacrificial layer
plastic material (for CPC and plastic sheet)
GaAs
InP
AlAs
InGaAs
AlInP
GaInP
InAs
InSb
GaP
AlP
GaSb
AlSb
metallization layer (Au, Ag, Pt, Pd, Ni, or Cu)
polyethylene terephthalate glycol-modified (PETG)
Ge (wetting layer)
Ge
Ag (metal reflecting layer)
Ag
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Power Conversion Efficiency | 28 | GaAs |
Energy Harvesting Enhancement Factor | 2.8 | — |
Pressure | 0.00001 torr | — |
Thickness | 2–200 nm | — |
Thickness | 4–100 nm | — |
Thickness | 4–80 nm | — |
Thickness | 4–25 nm | — |
Thickness | 200–500 nm | — |
Thickness | 300–900 nm | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 20–100 nm | — |
Thickness | 100–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≥ 1 nm | — |
Temperature | ≤ 1 °C | — |
Related documents with shared materials, methods, properties, or citations.
Photon-assisted ultrafast electron-hole plasma expansion in direct band semiconductors
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A MONOCRYSTALLINE INDIUM PHOSPHIDE
Computational study of III-V direct-gap semiconductors for thermoradiative cell applications
Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory
Dynamics of local photoconductivity in GaAs and InP investigated by THz SNOM
STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM TRAPEZOID ISOLATION
STRAIN BALANCED DIRECT BANDGAP ALUMINUM INDIUM PHOSPHIDE QUANTUM WELLS FOR LIGHT EMITTING DIODES
Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots
Recent advances in InGaAs/InP single-photon detectors
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
AlInGaAs/InGaAsP/InP EDGE EMITTING SEMICONDUCTOR LASER INCLUDING MULTIPLE MONOLITHIC LASER DIODES
APPARATUS AND METHODS TO CREATE AN INDIUM GALLIUM ARSENIDE ACTIVE CHANNEL HAVING INDIUM RICH SURFACES
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2D SVG 15126592.09-16-2016.IVRA₈YCERXEAPX2.ABST.1.48.233.2892.279.2921.svg 0.097 0.153 Chemistry Black and white SVG …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for integrating a thin-film solar cell with non-tracking miniconcentrators, said method comprising: providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the at least one protection layer; depositing a photoactive cell on the sacrificial layer, wherein the photoactive cell is inverted; forming a patterned metal layer comprising an array of mesas on the photoactive cell[[s]] by a photolithography method, wherein the mesas are separated by one or more trenches that extend through the patterned metal la y er and the photoactive cell to the sacrificial la yer; bonding the patterned metal layer to a metallized surface of a plastic sheet[[,]]; etching the sacrificial layer with one or more etch steps that remove the photoactive cell from the growth substrate to form thin film solar cells bonded to the plastic sheet; dicing the thin film solar cells bonded to the plastic sheet along the one or more trenches; fabricating compound parabolic concentrators from a plastic material; and transferring the thin film solar cells onto the compound parabolic concentrators by an adhesive-free bonding step to form an integrated thin film solar cell and compound parabolic concentrator. Currently amended
The method of claim 1, wherein the growth substrate comprises GaAs or I nP. Original
The method of claim 1, wherein the at least one protection layer is lattice matched with the growth substrate. Original
The method of claim 1, wherein at least one of the protection layer, sacrificial layer, or photoactive cell is deposited by at least one process chosen from gas source molecular beam epitaxy (GSMBE), metallo-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (H V PE), solid source molecular beam epitaxy (SSMBE), and chemical beam epitaxy. Original
The method of claim 1, wherein the at least one protection layer comprises a buffer layer, an etch-stop layer, or combinations thereof. Original
The method of claim 1, wherein said photolithography method comprises depositing a metal layer on the photoactive cell; depositing a mask on top of the metal layer for mesa etching; and performing at least one etch step through said mask to form _ the mesas separated b y the one or more trenches. Currently amended
The method o claim 1, wherein the sacrificial layer comprises A I As, and the one or more etch steps comprise contacting said A I As with HF. Currently amended
The method of claim 1, wherein the one or more trenches have a width ranging from 100 pm to 500 pm. Currently amended
The method of claim 1, wherein the photoactive cell comprises a multi-junction cell. Currently amended
The method of claim 1, wherein the step of bonding the patterned metal layer to the plastic sheet comprises a direct attachment method selected from cold-welding, thermally assisted cold-welding, and thermocompression bonding. Currently amended
The method o claim 1, wherein the thin film solar cells bonded to the plastic sheet are diced using a laser. Currently amended
The method of claim 1, wherein transferring the thin film solar cells onto the compound parabolic concentrators comprises attaching the thin-film solar cells to an elastomeric stamp and transfer printing the solar cells onto a metallized surface of the compound parabolic concentrators. Currently amended
The method of claim 1, wherein the plastic material has a glass transition temperature below 100 °C. Currently amended
The method of claim 1, wherein the plastic material comprises polyethylene terephthalate glycol-modified. Currently amended
The method of claim 1, wherein fabricatin g the compound parabolic concentrators comprises at least one thermoformin g process, wherein the at least one thermoforming process comprises mounting the plastic material on a negative compound-parabola shaped vacuum mold. Currently amended
Canceled
Canceled
The method o claim 1, wherein the plastic material is coated with at least one wetting layer and at least one metal reflecting layer. 27. The method of claim 26, wherein the at least one wetting layer comprises Ge. Original
The method of claim 26, wherein the at least one metal reflecting layer comprises Ag. Original
The method of claim 26, wherein the at least one wetting layer and the at least one metal reflecting layer are deposited using electron- beam, thermal evaporation, or combinations thereof. Currently amended
A photovoltaic device comprising a thin-film solar integrated with non-tracking mini-compound parabolic concentrators, comprising: a thin-film solar cell bonded to a plastic compound parabolic concentrator, wherein the plastic compound parabolic concentrator comprise two parabolas tilted at an angle equal to the acceptance angle of the compound parabolic concentrator, wherein the solar cell is able to collect light at angles broader than the acceptance angle of the compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the concentrators are designed such that the line of focal point is located right at the center of the concentrator opening plane. Withdrawn
The photovoltaic device of claim 30, wherein there is no adhesive material between thin-film solar cell and the plastic compound parabolic concentrator. Withdrawn
The photovoltaic device of claim 30, wherein the at least one photoactive cell comprises a single junction or multi-junction cell. 34. The photovoltaic device of claim 30, wherein the plastic compound parabolic concentrator has at least one surface that is metallized with at least one metal chosen from Au, Ag, Pt, Pd, Ni, and Cu. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator has a glass transition temperature below 100 C. Withdrawn
The photovoltaic device of claim 30, wherein the plastic parabolic concentrator comprises polyethylene terephthalate glycol-modified. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
thin-film solar cell integrated with compound parabolic concentrator
Materials described outside the worked examples.
photoactive cell (thin-film solar cell)
sacrificial layer
plastic material (for CPC and plastic sheet)
GaAs
InP
AlAs
InGaAs
AlInP
GaInP
InAs
InSb
GaP
AlP
GaSb
AlSb
metallization layer (Au, Ag, Pt, Pd, Ni, or Cu)
polyethylene terephthalate glycol-modified (PETG)
Ge (wetting layer)
Ge
Ag (metal reflecting layer)
Ag
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Power Conversion Efficiency | 28 | GaAs |
Energy Harvesting Enhancement Factor | 2.8 | — |
Pressure | 0.00001 torr | — |
Thickness | 2–200 nm | — |
Thickness | 4–100 nm | — |
Thickness | 4–80 nm | — |
Thickness | 4–25 nm | — |
Thickness | 200–500 nm | — |
Thickness | 300–900 nm | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 20–100 nm | — |
Thickness | 100–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≥ 1 nm | — |
Temperature | ≤ 1 °C | — |
Related documents with shared materials, methods, properties, or citations.
Photon-assisted ultrafast electron-hole plasma expansion in direct band semiconductors
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A MONOCRYSTALLINE INDIUM PHOSPHIDE
Computational study of III-V direct-gap semiconductors for thermoradiative cell applications
Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory
Dynamics of local photoconductivity in GaAs and InP investigated by THz SNOM
STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM TRAPEZOID ISOLATION
STRAIN BALANCED DIRECT BANDGAP ALUMINUM INDIUM PHOSPHIDE QUANTUM WELLS FOR LIGHT EMITTING DIODES
Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots
Recent advances in InGaAs/InP single-photon detectors
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
AlInGaAs/InGaAsP/InP EDGE EMITTING SEMICONDUCTOR LASER INCLUDING MULTIPLE MONOLITHIC LASER DIODES
APPARATUS AND METHODS TO CREATE AN INDIUM GALLIUM ARSENIDE ACTIVE CHANNEL HAVING INDIUM RICH SURFACES
