Patent
US 8,778,747REGROWN SCHOTTKY STRUCTURES FOR GAN HEMT DEVICES
Edward A. Beam III
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,778,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional view of a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 2-9 illustrate various stages of a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 10-13 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 14-21 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 22 is a flow diagram of some of the operations associated with a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 23 is a block diagram of a system incorporating a package including a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: forming a group I II -V layer over a buffer layer; forming a mask in clu ding an opening over the group I II -V layer, the mask including an opening to expose the group III -V la ver; etching the exposed group III -V la y er through the opening to expose the buffer la y er; regrowing a non-metallic Schottky layer within the opening to form a regrown non- metallic Schottky layer; and after regrowing the non-metallic Schottky layer, removing, from the group I II -V layer, the mask.
The method of claim 1, wherein the group I II -V layer comprises an n+ group I II -V material.
The method of claim 1, wherein the group I II -V layer comprises an undoped group I II -V material.
The method of claim 1, wherein the opening extends to the group I II -V layer, and wherein the regrowing comprises regrowing the non-metallic Schottky layer within the opening and on the group I II -V layer to form the regrown non-metallic Schottky layer.
The method of claim 1, further comprising forming a source contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer, and forming a drain contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer such that the regrown nonmetallic Schottky layer is between the source contact and the drain contact.
The method of claim 1, wherein the regrown non-metallic Schottky layer is formed through the group I II -V layer such that a first side and a second side of the regrown non-metallic Schottky layer abut the group I II -V layer.
canceled
The method of claim [[6]], wherein the regrowing the non- metallic Schottky layer comprises regrowing the non-metallic Schottky layer on the exposed buffer layer.
The method of claim [[6]] !, wherein the forming the group I II-V layer comprises forming the group I II -V on an etch stop layer disposed on the buffer layer, and wherein the etching comprises etching the group I II -V layer and the etch stop layer through the opening to expose the buffer layer.
The method of claim 8, further comprising etching the buffer layer through the opening.
An apparatus comprising: a buffer layer; a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and -3- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a regrown Schottky layer ever-within the etched opening of the group I II -V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la y er, the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The apparatus of claim 12, wherein the group I II -V layer comprises n+ gallium nitride, n+ indium gallium nitride, n+ indium nitride, n+ indium aluminum nitride, or n+ aluminum gallium nitride.
The apparatus of claim 12, wherein the regrown Schottky layer comprises at least one of gallium nitride, aluminum gallium nitride, indium aluminum nitride, aluminum nitride, indium gallium nitride, gallium boron nitride, indium boron nitride, or aluminum boron nitride.
The apparatus of claim 12, wherein the group I II -V layer comprises an undoped group I II -V material.
The apparatus of claim 12, wherein the source contact and drain contact abut the regrown Schottky layer in a same lateral plane as one another.
13-15. canceled
canceled
canceled
A system comprising: an antenna switch module configured to receive radio frequency (RF) output signals; a transceiver coupled with the antenna switch module and configured to generate RF input signals; and a power amplifier module coupled with the antenna switch module and the transceiver, and configured to receive the RF input signals from the transceiver and to provide RF output signals to the antenna switch module, wherein the power amplifier module includes a high electron mobility transistor having: a buffer layer; -4- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and a regrown Schottky layer e ver- within the etched opening of the group I II-V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la ye r the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The system of claim 19 wherein the system is a radar device, a satellite communication device, a mobile handset, a base station, a broadcast radio, or a television amplifier system.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with regrown Schottky layer
RF power amplifier module with GaN HEMT
No layer stack recorded.
Materials described outside the worked examples.
group III-V layer
buffer layer
n+ group III-V material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,778,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional view of a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 2-9 illustrate various stages of a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 10-13 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 14-21 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 22 is a flow diagram of some of the operations associated with a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 23 is a block diagram of a system incorporating a package including a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: forming a group I II -V layer over a buffer layer; forming a mask in clu ding an opening over the group I II -V layer, the mask including an opening to expose the group III -V la ver; etching the exposed group III -V la y er through the opening to expose the buffer la y er; regrowing a non-metallic Schottky layer within the opening to form a regrown non- metallic Schottky layer; and after regrowing the non-metallic Schottky layer, removing, from the group I II -V layer, the mask.
The method of claim 1, wherein the group I II -V layer comprises an n+ group I II -V material.
The method of claim 1, wherein the group I II -V layer comprises an undoped group I II -V material.
The method of claim 1, wherein the opening extends to the group I II -V layer, and wherein the regrowing comprises regrowing the non-metallic Schottky layer within the opening and on the group I II -V layer to form the regrown non-metallic Schottky layer.
The method of claim 1, further comprising forming a source contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer, and forming a drain contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer such that the regrown nonmetallic Schottky layer is between the source contact and the drain contact.
The method of claim 1, wherein the regrown non-metallic Schottky layer is formed through the group I II -V layer such that a first side and a second side of the regrown non-metallic Schottky layer abut the group I II -V layer.
canceled
The method of claim [[6]], wherein the regrowing the non- metallic Schottky layer comprises regrowing the non-metallic Schottky layer on the exposed buffer layer.
The method of claim [[6]] !, wherein the forming the group I II-V layer comprises forming the group I II -V on an etch stop layer disposed on the buffer layer, and wherein the etching comprises etching the group I II -V layer and the etch stop layer through the opening to expose the buffer layer.
The method of claim 8, further comprising etching the buffer layer through the opening.
An apparatus comprising: a buffer layer; a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and -3- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a regrown Schottky layer ever-within the etched opening of the group I II -V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la y er, the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The apparatus of claim 12, wherein the group I II -V layer comprises n+ gallium nitride, n+ indium gallium nitride, n+ indium nitride, n+ indium aluminum nitride, or n+ aluminum gallium nitride.
The apparatus of claim 12, wherein the regrown Schottky layer comprises at least one of gallium nitride, aluminum gallium nitride, indium aluminum nitride, aluminum nitride, indium gallium nitride, gallium boron nitride, indium boron nitride, or aluminum boron nitride.
The apparatus of claim 12, wherein the group I II -V layer comprises an undoped group I II -V material.
The apparatus of claim 12, wherein the source contact and drain contact abut the regrown Schottky layer in a same lateral plane as one another.
13-15. canceled
canceled
canceled
A system comprising: an antenna switch module configured to receive radio frequency (RF) output signals; a transceiver coupled with the antenna switch module and configured to generate RF input signals; and a power amplifier module coupled with the antenna switch module and the transceiver, and configured to receive the RF input signals from the transceiver and to provide RF output signals to the antenna switch module, wherein the power amplifier module includes a high electron mobility transistor having: a buffer layer; -4- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and a regrown Schottky layer e ver- within the etched opening of the group I II-V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la ye r the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The system of claim 19 wherein the system is a radar device, a satellite communication device, a mobile handset, a base station, a broadcast radio, or a television amplifier system.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with regrown Schottky layer
RF power amplifier module with GaN HEMT
No layer stack recorded.
Materials described outside the worked examples.
group III-V layer
buffer layer
n+ group III-V material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,778,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional view of a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 2-9 illustrate various stages of a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 10-13 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 14-21 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 22 is a flow diagram of some of the operations associated with a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 23 is a block diagram of a system incorporating a package including a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: forming a group I II -V layer over a buffer layer; forming a mask in clu ding an opening over the group I II -V layer, the mask including an opening to expose the group III -V la ver; etching the exposed group III -V la y er through the opening to expose the buffer la y er; regrowing a non-metallic Schottky layer within the opening to form a regrown non- metallic Schottky layer; and after regrowing the non-metallic Schottky layer, removing, from the group I II -V layer, the mask.
The method of claim 1, wherein the group I II -V layer comprises an n+ group I II -V material.
The method of claim 1, wherein the group I II -V layer comprises an undoped group I II -V material.
The method of claim 1, wherein the opening extends to the group I II -V layer, and wherein the regrowing comprises regrowing the non-metallic Schottky layer within the opening and on the group I II -V layer to form the regrown non-metallic Schottky layer.
The method of claim 1, further comprising forming a source contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer, and forming a drain contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer such that the regrown nonmetallic Schottky layer is between the source contact and the drain contact.
The method of claim 1, wherein the regrown non-metallic Schottky layer is formed through the group I II -V layer such that a first side and a second side of the regrown non-metallic Schottky layer abut the group I II -V layer.
canceled
The method of claim [[6]], wherein the regrowing the non- metallic Schottky layer comprises regrowing the non-metallic Schottky layer on the exposed buffer layer.
The method of claim [[6]] !, wherein the forming the group I II-V layer comprises forming the group I II -V on an etch stop layer disposed on the buffer layer, and wherein the etching comprises etching the group I II -V layer and the etch stop layer through the opening to expose the buffer layer.
The method of claim 8, further comprising etching the buffer layer through the opening.
An apparatus comprising: a buffer layer; a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and -3- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a regrown Schottky layer ever-within the etched opening of the group I II -V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la y er, the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The apparatus of claim 12, wherein the group I II -V layer comprises n+ gallium nitride, n+ indium gallium nitride, n+ indium nitride, n+ indium aluminum nitride, or n+ aluminum gallium nitride.
The apparatus of claim 12, wherein the regrown Schottky layer comprises at least one of gallium nitride, aluminum gallium nitride, indium aluminum nitride, aluminum nitride, indium gallium nitride, gallium boron nitride, indium boron nitride, or aluminum boron nitride.
The apparatus of claim 12, wherein the group I II -V layer comprises an undoped group I II -V material.
The apparatus of claim 12, wherein the source contact and drain contact abut the regrown Schottky layer in a same lateral plane as one another.
13-15. canceled
canceled
canceled
A system comprising: an antenna switch module configured to receive radio frequency (RF) output signals; a transceiver coupled with the antenna switch module and configured to generate RF input signals; and a power amplifier module coupled with the antenna switch module and the transceiver, and configured to receive the RF input signals from the transceiver and to provide RF output signals to the antenna switch module, wherein the power amplifier module includes a high electron mobility transistor having: a buffer layer; -4- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and a regrown Schottky layer e ver- within the etched opening of the group I II-V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la ye r the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The system of claim 19 wherein the system is a radar device, a satellite communication device, a mobile handset, a base station, a broadcast radio, or a television amplifier system.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with regrown Schottky layer
RF power amplifier module with GaN HEMT
No layer stack recorded.
Materials described outside the worked examples.
group III-V layer
buffer layer
n+ group III-V material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,778,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a sectional view of a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 2-9 illustrate various stages of a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 10-13 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figures 14-21 illustrate various stages of another method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 22 is a flow diagram of some of the operations associated with a method for making a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Figure 23 is a block diagram of a system incorporating a package including a HEMT including a regrown Schottky structure, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: forming a group I II -V layer over a buffer layer; forming a mask in clu ding an opening over the group I II -V layer, the mask including an opening to expose the group III -V la ver; etching the exposed group III -V la y er through the opening to expose the buffer la y er; regrowing a non-metallic Schottky layer within the opening to form a regrown non- metallic Schottky layer; and after regrowing the non-metallic Schottky layer, removing, from the group I II -V layer, the mask.
The method of claim 1, wherein the group I II -V layer comprises an n+ group I II -V material.
The method of claim 1, wherein the group I II -V layer comprises an undoped group I II -V material.
The method of claim 1, wherein the opening extends to the group I II -V layer, and wherein the regrowing comprises regrowing the non-metallic Schottky layer within the opening and on the group I II -V layer to form the regrown non-metallic Schottky layer.
The method of claim 1, further comprising forming a source contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer, and forming a drain contact on the group I II -V layer and abutting the regrown non-metallic Schottky layer such that the regrown nonmetallic Schottky layer is between the source contact and the drain contact.
The method of claim 1, wherein the regrown non-metallic Schottky layer is formed through the group I II -V layer such that a first side and a second side of the regrown non-metallic Schottky layer abut the group I II -V layer.
canceled
The method of claim [[6]], wherein the regrowing the non- metallic Schottky layer comprises regrowing the non-metallic Schottky layer on the exposed buffer layer.
The method of claim [[6]] !, wherein the forming the group I II-V layer comprises forming the group I II -V on an etch stop layer disposed on the buffer layer, and wherein the etching comprises etching the group I II -V layer and the etch stop layer through the opening to expose the buffer layer.
The method of claim 8, further comprising etching the buffer layer through the opening.
An apparatus comprising: a buffer layer; a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and -3- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a regrown Schottky layer ever-within the etched opening of the group I II -V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la y er, the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The apparatus of claim 12, wherein the group I II -V layer comprises n+ gallium nitride, n+ indium gallium nitride, n+ indium nitride, n+ indium aluminum nitride, or n+ aluminum gallium nitride.
The apparatus of claim 12, wherein the regrown Schottky layer comprises at least one of gallium nitride, aluminum gallium nitride, indium aluminum nitride, aluminum nitride, indium gallium nitride, gallium boron nitride, indium boron nitride, or aluminum boron nitride.
The apparatus of claim 12, wherein the group I II -V layer comprises an undoped group I II -V material.
The apparatus of claim 12, wherein the source contact and drain contact abut the regrown Schottky layer in a same lateral plane as one another.
13-15. canceled
canceled
canceled
A system comprising: an antenna switch module configured to receive radio frequency (RF) output signals; a transceiver coupled with the antenna switch module and configured to generate RF input signals; and a power amplifier module coupled with the antenna switch module and the transceiver, and configured to receive the RF input signals from the transceiver and to provide RF output signals to the antenna switch module, wherein the power amplifier module includes a high electron mobility transistor having: a buffer layer; -4- Attorney Docket No.: 112693-179991 Application No.: 13/115,913 I PN: TQ0156 a group I II -V layer over the buffer layer, the group III -V la y er including an etched opening to expose the buffer la y er; a source contact and a drain contact on the group I II -V layer; and a regrown Schottky layer e ver- within the etched opening of the group I II-V layer [[,]] and between the source and drain contacts; wherein the regrown Schottky la y er is in direct contact with the buffer la ye r the source contact abuts the regrown Schottky layer, and the drain contact abuts the regrown Schottky layer.
The system of claim 19 wherein the system is a radar device, a satellite communication device, a mobile handset, a base station, a broadcast radio, or a television amplifier system.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with regrown Schottky layer
RF power amplifier module with GaN HEMT
No layer stack recorded.
Materials described outside the worked examples.
group III-V layer
buffer layer
n+ group III-V material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
n+ gallium nitride
n+ GaN
n+ indium gallium nitride
n+ InGaN
n+ indium nitride
n+ InN
n+ indium aluminum nitride
n+ InAlN
n+ aluminum gallium nitride
n+ AlGaN
undoped group III-V material
regrown Schottky layer
gallium nitride
GaN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
aluminum nitride
AlN
indium gallium nitride
InGaN
gallium boron nitride
GaBN
indium boron nitride
InBN
aluminum boron nitride
AlBN
silicon carbide
SiC
gallium-nitride-based buffer layer
silicon nitride hard mask
Si₃N₄
silicon oxide hard mask
SiO₂
| — |
AlN BUFFER N-POLAR GaN HEMT PROFILE
n+ gallium nitride
n+ GaN
n+ indium gallium nitride
n+ InGaN
n+ indium nitride
n+ InN
n+ indium aluminum nitride
n+ InAlN
n+ aluminum gallium nitride
n+ AlGaN
undoped group III-V material
regrown Schottky layer
gallium nitride
GaN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
aluminum nitride
AlN
indium gallium nitride
InGaN
gallium boron nitride
GaBN
indium boron nitride
InBN
aluminum boron nitride
AlBN
silicon carbide
SiC
gallium-nitride-based buffer layer
silicon nitride hard mask
Si₃N₄
silicon oxide hard mask
SiO₂
| — |
AlN BUFFER N-POLAR GaN HEMT PROFILE
n+ gallium nitride
n+ GaN
n+ indium gallium nitride
n+ InGaN
n+ indium nitride
n+ InN
n+ indium aluminum nitride
n+ InAlN
n+ aluminum gallium nitride
n+ AlGaN
undoped group III-V material
regrown Schottky layer
gallium nitride
GaN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
aluminum nitride
AlN
indium gallium nitride
InGaN
gallium boron nitride
GaBN
indium boron nitride
InBN
aluminum boron nitride
AlBN
silicon carbide
SiC
gallium-nitride-based buffer layer
silicon nitride hard mask
Si₃N₄
silicon oxide hard mask
SiO₂
| — |
AlN BUFFER N-POLAR GaN HEMT PROFILE
n+ gallium nitride
n+ GaN
n+ indium gallium nitride
n+ InGaN
n+ indium nitride
n+ InN
n+ indium aluminum nitride
n+ InAlN
n+ aluminum gallium nitride
n+ AlGaN
undoped group III-V material
regrown Schottky layer
gallium nitride
GaN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
aluminum nitride
AlN
indium gallium nitride
InGaN
gallium boron nitride
GaBN
indium boron nitride
InBN
aluminum boron nitride
AlBN
silicon carbide
SiC
gallium-nitride-based buffer layer
silicon nitride hard mask
Si₃N₄
silicon oxide hard mask
SiO₂
| — |