of Invention

Hiroki AGO

Patent

Atlas literature

Patent

US 11,352,692

of Invention

Hiroki AGO

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

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FIG. 13

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FIG. 17

FIG. 18

FIG. 19

FIG. 20

FIG. 21

FIG. 22

FIG. 23

FIG. 24

FIG. 25

FIG. 26

FIG. 27

FIG. 28

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 21 dependent

1
Independenth-BN
A hexagonal boron nitride thin ﬁlm, having a thickness of 1 nm or more, and an average value of a full width at half maximum of an E 2g peak obtained from a Raman spectrum of 9 to 20 cm⁻¹, wherein the Raman spectrum is measured at a measuring place(s) randomly selected from a 20- p m square area of the hexagonal boron nitride thin ﬁlm. Withdrawn
1. 2
  Dependent← claim 1h-BN
  The hexagonal boron nitride thin ﬁlm according to claim 1, wherein a coeﬃcient of variation of an intensity distribution of a G component of an RGB image of the hexagonal boron nitride thin ﬁlm obtained with an optical microscope is 5 % or less, and wherein the intensity distribution of the G component is measured at plural measuring points arbitrarily selected from the RGB image. Withdrawn
2. 4
  Dependent← claim 1h-BN
  The hexagonal boron nitride thin ﬁlm according to claim 1, wherein the hexagonal boron nitride thin ﬁlm has a thickness of 1 nm or more and 50 nm or less. Withdrawn
3. 5
  Dependent← claim 1h-BN
  The hexagonal boron nitride thin ﬁlm according to claim 1, wherein the hexagonal boron nitride thin ﬁlm consists of three or more layers. Withdrawn
4. 14
  Dependent← claim 1h-BNstacked body
  A stacked body, comprising the hexagonal boron nitride thin ﬁlm according to claim 1. Withdrawn
6
Independenth-BNNi-Fe metal thin filmCo-Fe metal thin filmCr-Fe metal thin film
A method for producing a hexagonal boron nitride thin ﬁlm, comprising forming the hexagonal boron nitride thin ﬁlm having a thickness of 1 nm or more on a surface of a metal thin ﬁlm by a chemical vapor deposition (CVD) method including steps of, i) supplying raw material gas containing boron atoms, nitrogen atoms, or both of boron atoms and nitrogen atoms n the surface of the metal thin ﬁlm at a CVD synthesis temperature, wherein the metal thin ﬁlm contains Ni and Fe, Co and Fe, or Cr and Fe as main component elements, and ii) cooling the surface of the metal thin ﬁlm from the CVD synthesis temperature after supplying the raw material gas for a predetermined period of time, wherein an average value of a full width at half maximum of an E 2g peak obtained from a Raman spectrum is 9 to 20 cm⁻¹ as measured at one or more measuring points randomly selected from a 20- i m square area of the hexagonal boron nitride thin ﬁlm, and wherein a coeﬃcient of variation of an intensity distribution of a G component of an RGB image of the hexagonal boron nitride thin ﬁlm on a silicon substrate having an oxide ﬁlm obtained with an optical microscope is 5 % or less, and wherein the intensity distribution of the G component is measured at plural measuring points randomly selected from the RGB image. Currently amended
1. 17
  Dependent← claim 6h-BN
  The method for producing a hexagonal boron nitride thin ﬁlm according to claim 6, wherein the metal thin ﬁlm is formed on a single crystal substrate. New
2. 18
  Dependent← claim 6h-BN
  The method for producing a hexagonal boron nitride thin ﬁlm according to claim 6, wherein the cooling process is performed at a rate of 0. 01 to 2.5 ° C/min from the CVD synthesis temperature. New
3. 22
  Dependent← claim 6h-BN
  The method for producing a hexagonal boron nitride thin ﬁlm according to claim 6, wherein the cooling process comprises slow cooling performed from the CVD synthesis temperature and rapid cooling performed after the slow cooling process. New
4. 26
  Dependent← claim 6h-BN
  The method for producing a hexagonal boron nitride thin ﬁlm according to claim 6, wherein the metal thin ﬁlm is a stacked ﬁlm of metal ﬁlms. New
7
Independent
Canceled
8
Independenth-BNNi-Fe metal thin film
The method for producing a hexagonal boron nitride thin ﬁlm according to laim 6, wherein the metal thin ﬁlm contains Ni and Fe as main component elements, and a surface of the metal thin ﬁlm has a (111) plane, a (100) plane, or a (110) plane of a face-centered cubic lattice. Currently amended
1. 9
  Dependent← claim 8h-BNNi-Fe metal thin film
  The method for producing a hexagonal boron nitride thin ﬁlm according to claim 8, wherein the metal thin ﬁlm contains 10% or more of Ni. Original
10
Independent
10-13. Canceled
13
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

stacked body

h-BNinsulating layer

thin film transistor

h-BNinsulating layer

Materials

Materials described outside the worked examples.

hexagonal boron nitride

h-BN

Claimed Thin Film Material

Ni-Fe metal thin film

Cvd Catalyst Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Process details

catalyst:Ni and Fe, Co and Fe, or Cr and Fe metal thin film

precursors:raw material gas containing boron atoms, nitrogen atoms, or both

cooling type:slow cooling followed by rapid cooling (optional)

substrate options:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
E2g Raman peak FWHM average (claimed range)	9–20 cm⁻¹	h-BN
h-BN thin film thickness (claimed range)	1–50 nm

Why these are connected

Related documents with shared materials, methods, properties, or citations.

of Invention | Matter42 Literature