Patent
US 9,178,129Graphene-Based Films in Sensor Applications
Woo Young Lee
US
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US 9,178,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a process of forming flexible graphene micropatterns according to an embodiment of the present invention The micropattern …
FIG. 2 is a plot of the changes in resistance of the micropattern as graphene oxide in the micropattern is converted to graphene using a heat lamp, according …
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 6, the following equation was used to model the observed temperature-dependence SVG …
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 2 AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of the claims in the application: Listing of Claims: Claim 1-10 canceled
A method of measuring temperature, comprising the steps of: providing a temperature sensor having an electrically-conductive current collector on a surface of an electrically-insulating substrate and a film including graphene in electrical communication with said current collector, wherein said film has an electrical resistivity and a negative temperature coefficient of resistance; measuring a reference electrical resistance of the film across said current collector when said film is at a reference temperature so as to obtain a data pair of the reference electrical resistance paired with the reference temperature; generating a mathematical correlation between the data pair of the reference electrical resistance paired with the reference temperature; measuring another electrical resistance of said film across said current collector when said film is at an unknown temperature; calculating a value for the unknown temperature from the another electrical resistance by the mathematical correlation.
The method of Claim 11, wherein said step of measuring a reference electrical resistance is repeated at different reference temperatures so as to obtain a plurality of pairs of reference electrical resistances paired with reference temperatures, and the NJ 229161174 v1 U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 3 mathematical correlation of said generating step is generated from the plurality of data pairs of reference electrical resistances paired with reference temperatures. NJ 229161174 v1
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film temperature sensor
Materials described outside the worked examples.
graphene film
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C=O stretching vibration (graphene oxide, before reduction) | 1735 cm⁻¹ | graphene oxide |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,178,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a process of forming flexible graphene micropatterns according to an embodiment of the present invention The micropattern …
FIG. 2 is a plot of the changes in resistance of the micropattern as graphene oxide in the micropattern is converted to graphene using a heat lamp, according …
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 6, the following equation was used to model the observed temperature-dependence SVG …
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 2 AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of the claims in the application: Listing of Claims: Claim 1-10 canceled
A method of measuring temperature, comprising the steps of: providing a temperature sensor having an electrically-conductive current collector on a surface of an electrically-insulating substrate and a film including graphene in electrical communication with said current collector, wherein said film has an electrical resistivity and a negative temperature coefficient of resistance; measuring a reference electrical resistance of the film across said current collector when said film is at a reference temperature so as to obtain a data pair of the reference electrical resistance paired with the reference temperature; generating a mathematical correlation between the data pair of the reference electrical resistance paired with the reference temperature; measuring another electrical resistance of said film across said current collector when said film is at an unknown temperature; calculating a value for the unknown temperature from the another electrical resistance by the mathematical correlation.
The method of Claim 11, wherein said step of measuring a reference electrical resistance is repeated at different reference temperatures so as to obtain a plurality of pairs of reference electrical resistances paired with reference temperatures, and the NJ 229161174 v1 U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 3 mathematical correlation of said generating step is generated from the plurality of data pairs of reference electrical resistances paired with reference temperatures. NJ 229161174 v1
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film temperature sensor
Materials described outside the worked examples.
graphene film
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C=O stretching vibration (graphene oxide, before reduction) | 1735 cm⁻¹ | graphene oxide |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,178,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a process of forming flexible graphene micropatterns according to an embodiment of the present invention The micropattern …
FIG. 2 is a plot of the changes in resistance of the micropattern as graphene oxide in the micropattern is converted to graphene using a heat lamp, according …
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 6, the following equation was used to model the observed temperature-dependence SVG …
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 2 AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of the claims in the application: Listing of Claims: Claim 1-10 canceled
A method of measuring temperature, comprising the steps of: providing a temperature sensor having an electrically-conductive current collector on a surface of an electrically-insulating substrate and a film including graphene in electrical communication with said current collector, wherein said film has an electrical resistivity and a negative temperature coefficient of resistance; measuring a reference electrical resistance of the film across said current collector when said film is at a reference temperature so as to obtain a data pair of the reference electrical resistance paired with the reference temperature; generating a mathematical correlation between the data pair of the reference electrical resistance paired with the reference temperature; measuring another electrical resistance of said film across said current collector when said film is at an unknown temperature; calculating a value for the unknown temperature from the another electrical resistance by the mathematical correlation.
The method of Claim 11, wherein said step of measuring a reference electrical resistance is repeated at different reference temperatures so as to obtain a plurality of pairs of reference electrical resistances paired with reference temperatures, and the NJ 229161174 v1 U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 3 mathematical correlation of said generating step is generated from the plurality of data pairs of reference electrical resistances paired with reference temperatures. NJ 229161174 v1
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film temperature sensor
Materials described outside the worked examples.
graphene film
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C=O stretching vibration (graphene oxide, before reduction) | 1735 cm⁻¹ | graphene oxide |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,178,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a process of forming flexible graphene micropatterns according to an embodiment of the present invention The micropattern …
FIG. 2 is a plot of the changes in resistance of the micropattern as graphene oxide in the micropattern is converted to graphene using a heat lamp, according …
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 6, the following equation was used to model the observed temperature-dependence SVG …
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 2 AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of the claims in the application: Listing of Claims: Claim 1-10 canceled
A method of measuring temperature, comprising the steps of: providing a temperature sensor having an electrically-conductive current collector on a surface of an electrically-insulating substrate and a film including graphene in electrical communication with said current collector, wherein said film has an electrical resistivity and a negative temperature coefficient of resistance; measuring a reference electrical resistance of the film across said current collector when said film is at a reference temperature so as to obtain a data pair of the reference electrical resistance paired with the reference temperature; generating a mathematical correlation between the data pair of the reference electrical resistance paired with the reference temperature; measuring another electrical resistance of said film across said current collector when said film is at an unknown temperature; calculating a value for the unknown temperature from the another electrical resistance by the mathematical correlation.
The method of Claim 11, wherein said step of measuring a reference electrical resistance is repeated at different reference temperatures so as to obtain a plurality of pairs of reference electrical resistances paired with reference temperatures, and the NJ 229161174 v1 U.S. Patent Application Serial No. 14/053,232 Amendment in Response to Office Action of Page 3 mathematical correlation of said generating step is generated from the plurality of data pairs of reference electrical resistances paired with reference temperatures. NJ 229161174 v1
Layer stacks claimed or described, ordered top of device to substrate.
graphene thin-film temperature sensor
Materials described outside the worked examples.
graphene film
graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 presents plots of the Fourier transform infrared (FTIR) characte ri stics of graphene oxide sheets before (upper plot) and after (lower plot) reduction …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C=O stretching vibration (graphene oxide, before reduction) | 1735 cm⁻¹ | graphene oxide |
Related documents with shared materials, methods, properties, or citations.
polyethylene terephthalate (PET)
Kapton polyimide membrane
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
O-H stretching vibration (graphene oxide, before reduction) |
| 3428 cm⁻¹ |
graphene oxide |
O-H deformation vibration (graphene oxide, before reduction) | 1411 cm⁻¹ | graphene oxide |
aromatic C=C stretching vibration (graphene oxide, before reduction) | 1610 cm⁻¹ | graphene oxide |
alkoxy C-O stretching vibration (graphene oxide, before reduction) | 1041 cm⁻¹ | graphene oxide |
Raman G band (graphene oxide, before reduction) | 1607 cm⁻¹ | graphene oxide |
Raman D band (graphene oxide, before reduction) | 1354 cm⁻¹ | graphene oxide |
Raman G band (reduced graphene oxide, after IR lamp reduction) | 1602 cm⁻¹ | graphene film |
Raman D band (reduced graphene oxide, after IR lamp reduction) | 1354 cm⁻¹ | graphene film |
Raman D/G intensity ratio before reduction | 0.79 | graphene oxide |
Raman D/G intensity ratio after IR lamp reduction | 0.94 | graphene film |
Thickness | 1602–1607 cm | — |
Temperature | 298–358 K | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
polyethylene terephthalate (PET)
Kapton polyimide membrane
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
O-H stretching vibration (graphene oxide, before reduction) |
| 3428 cm⁻¹ |
graphene oxide |
O-H deformation vibration (graphene oxide, before reduction) | 1411 cm⁻¹ | graphene oxide |
aromatic C=C stretching vibration (graphene oxide, before reduction) | 1610 cm⁻¹ | graphene oxide |
alkoxy C-O stretching vibration (graphene oxide, before reduction) | 1041 cm⁻¹ | graphene oxide |
Raman G band (graphene oxide, before reduction) | 1607 cm⁻¹ | graphene oxide |
Raman D band (graphene oxide, before reduction) | 1354 cm⁻¹ | graphene oxide |
Raman G band (reduced graphene oxide, after IR lamp reduction) | 1602 cm⁻¹ | graphene film |
Raman D band (reduced graphene oxide, after IR lamp reduction) | 1354 cm⁻¹ | graphene film |
Raman D/G intensity ratio before reduction | 0.79 | graphene oxide |
Raman D/G intensity ratio after IR lamp reduction | 0.94 | graphene film |
Thickness | 1602–1607 cm | — |
Temperature | 298–358 K | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
polyethylene terephthalate (PET)
Kapton polyimide membrane
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
O-H stretching vibration (graphene oxide, before reduction) |
| 3428 cm⁻¹ |
graphene oxide |
O-H deformation vibration (graphene oxide, before reduction) | 1411 cm⁻¹ | graphene oxide |
aromatic C=C stretching vibration (graphene oxide, before reduction) | 1610 cm⁻¹ | graphene oxide |
alkoxy C-O stretching vibration (graphene oxide, before reduction) | 1041 cm⁻¹ | graphene oxide |
Raman G band (graphene oxide, before reduction) | 1607 cm⁻¹ | graphene oxide |
Raman D band (graphene oxide, before reduction) | 1354 cm⁻¹ | graphene oxide |
Raman G band (reduced graphene oxide, after IR lamp reduction) | 1602 cm⁻¹ | graphene film |
Raman D band (reduced graphene oxide, after IR lamp reduction) | 1354 cm⁻¹ | graphene film |
Raman D/G intensity ratio before reduction | 0.79 | graphene oxide |
Raman D/G intensity ratio after IR lamp reduction | 0.94 | graphene film |
Thickness | 1602–1607 cm | — |
Temperature | 298–358 K | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
polyethylene terephthalate (PET)
Kapton polyimide membrane
FIG. 5. The resistance of the graphene film decreases significantly with increased temperature. Refe rring to
FIG. 7. In contrast, no change in resistance was observed when the film was tapped with other objects that were in thermal equilibrium with the room environment …
FIG. 9 is a plot showing the change of electrical resistance with respect to relative humidity in the environment of a graphene film prepared according to an …
FIG. 10, and measuring the changes in the electrical resistance of the sensor duri ng exposure to different relative humidities in the environment of the sensor …
O-H stretching vibration (graphene oxide, before reduction) |
| 3428 cm⁻¹ |
graphene oxide |
O-H deformation vibration (graphene oxide, before reduction) | 1411 cm⁻¹ | graphene oxide |
aromatic C=C stretching vibration (graphene oxide, before reduction) | 1610 cm⁻¹ | graphene oxide |
alkoxy C-O stretching vibration (graphene oxide, before reduction) | 1041 cm⁻¹ | graphene oxide |
Raman G band (graphene oxide, before reduction) | 1607 cm⁻¹ | graphene oxide |
Raman D band (graphene oxide, before reduction) | 1354 cm⁻¹ | graphene oxide |
Raman G band (reduced graphene oxide, after IR lamp reduction) | 1602 cm⁻¹ | graphene film |
Raman D band (reduced graphene oxide, after IR lamp reduction) | 1354 cm⁻¹ | graphene film |
Raman D/G intensity ratio before reduction | 0.79 | graphene oxide |
Raman D/G intensity ratio after IR lamp reduction | 0.94 | graphene film |
Thickness | 1602–1607 cm | — |
Temperature | 298–358 K | — |