Patent
US 9,171,751METHOD AND SYSTEM FABRICATING FLOATING GUARD RINGS IN GAN MATERIALS
Donald R. Disney
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,171,751Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
FIGS. 2-7 are simplified cross-sectional diagrams illustrating the fabrication of a Schottky diode in gallium-nitride with edge termination structures formed …
FIG. 3 illustrates the formation of a second GaN epitaxial layer 301 above the first GaN epitaxial layer 201. The second GaN epitaxial layer 301, from which …
FIG. 4 illustrates the formation of a first metallic structure 401 below the GaN substrate 200. The first metallic structure 401 can be one or more layers of …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 6 illustrates the formation of a second metallic structure 601 coupled to the exposed portion 510 of the first GaN epitaxial layer 201. The second metallic …
FIG. 7 illustrates the formation of metallic field plate 701 -2 coupled to metallic structure 601 and to dielectric layer 702, which may also provide some …
FIG. 8A. The structure properties, such as dopant concentrations and thicknesses, can vary from those of a Schottky diode, depending on the desired …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 10 illustrates the formation of metallic field plate 1002 coupled to metallic structure 901 and dielectric layer 1001. The metallic field plate 1002 can be …
FIG. 11 is simplified cross-sectional diagram illustrating a vertical JFET with edge termination structures according to another embodiment of the present …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in
FIG. 15 is a simplified flowchart illustrating a method of fabricating a Schottky diode with edge termination structures formed through ion implantation into an …
FIG. 16 is a simplified flowchart illustrating a method of fabricating a PIN or PN diode with edge termination structures in a I II -nitride material, according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an edge termination structure, the method comprising: providing a substrate of a first conductivity type, the substrate having a first surface and a second surface; forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate; forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type, the second GaN epitaxial layer being coupled to the first GaN epitaxial layer; implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer; and forming an active device coupled to the second region of the second GaN epitaxial layer; and wherein the third region of the second GaN epitaxial layer comprises an edge termination structure.
The method of claim 1 further comprising forming a first metallic structure electrically coupled to the second surface of the substrate.
The method of claim 1 wherein the substrate is characterized by a first n-type dopant concentration, the first GaN epitaxial layer is characterized by a second n- type dopant concentration less than the first n-type dopant concentration, and the second GaN epitaxial layer is characterized by a p-type dopant concentration greater than the second n-type dopant concentration and less than the first n-type dopant concentration.
The method of claim 1 further comprising forming a metallic structure electrically coupled to a portion of the first GaN epitaxial layer, wherein the metallic structure comprises a Schottky contact to the portion of the first GaN epitaxial layer.
The method of claim 1 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 1 wherein the edge termination structure circumscribes the active device.
A method of fabricating a vertical power device structure, the method comprising: forming an epitaxial structure by: providing a III -nitride substrate of a first conductivity type characterized by a first dopant concentration; forming a first I II -nitride epitaxial layer of the first conductivity type coupled to a first surface of the I II -nitride substrate; and Page 3 of 11 App l. No. 14/264,998 PATENT Amdt. dated Reply to Office Action of forming a second I II -nitride epitaxial layer of a second conductivity type coupled to the first I II-nitride epitaxial layer, wherein the second I II -nitride epitaxial layer has a surface opposing the first I II -nitride epitaxial layer; defining regions of the epitaxial structure by implanting ions into the surface of the second epitaxial layer to form an implantation region of the epitaxial structure, wherein the implantation region electrically isolates a device region of the epitaxial structure from an edge termination region of the epitaxial structure; forming one or more active devices using at least the device region of the epitaxial structure; and forming an edge termination structure using at least the edge termination region of the epitaxial structure.
The method of claim 11 further comprising forming a Schottky metallic structure coupled to the first epitaxial layer.
The method of claim 11 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 11 wherein the edge termination structure circumscribes the one or more active devices.
The method of claim 11 wherein the first I II -nitride epitaxial layer is characterized by a second dopant concentration less than the first dopant concentration.
The method of claim 11 wherein forming the edge termination structure comprises forming three or more edge termination elements with predetermined spaces between each of the three or more edge termination elements, wherein: a first spacing of the predetermined spaces is located closer to the one or more active devices than a second spacing of the predetermined spaces; and a width of the first spacing is smaller than a width of the second spacing. Page 4 of 11
Layer stacks claimed or described, ordered top of device to substrate.
edge termination structure with active device (GaN-based)
vertical power device structure with edge termination (III-nitride based)
Materials described outside the worked examples.
GaN substrate (first conductivity type)
GaN
III-nitride substrate (first conductivity type)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,171,751Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
FIGS. 2-7 are simplified cross-sectional diagrams illustrating the fabrication of a Schottky diode in gallium-nitride with edge termination structures formed …
FIG. 3 illustrates the formation of a second GaN epitaxial layer 301 above the first GaN epitaxial layer 201. The second GaN epitaxial layer 301, from which …
FIG. 4 illustrates the formation of a first metallic structure 401 below the GaN substrate 200. The first metallic structure 401 can be one or more layers of …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 6 illustrates the formation of a second metallic structure 601 coupled to the exposed portion 510 of the first GaN epitaxial layer 201. The second metallic …
FIG. 7 illustrates the formation of metallic field plate 701 -2 coupled to metallic structure 601 and to dielectric layer 702, which may also provide some …
FIG. 8A. The structure properties, such as dopant concentrations and thicknesses, can vary from those of a Schottky diode, depending on the desired …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 10 illustrates the formation of metallic field plate 1002 coupled to metallic structure 901 and dielectric layer 1001. The metallic field plate 1002 can be …
FIG. 11 is simplified cross-sectional diagram illustrating a vertical JFET with edge termination structures according to another embodiment of the present …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in
FIG. 15 is a simplified flowchart illustrating a method of fabricating a Schottky diode with edge termination structures formed through ion implantation into an …
FIG. 16 is a simplified flowchart illustrating a method of fabricating a PIN or PN diode with edge termination structures in a I II -nitride material, according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an edge termination structure, the method comprising: providing a substrate of a first conductivity type, the substrate having a first surface and a second surface; forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate; forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type, the second GaN epitaxial layer being coupled to the first GaN epitaxial layer; implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer; and forming an active device coupled to the second region of the second GaN epitaxial layer; and wherein the third region of the second GaN epitaxial layer comprises an edge termination structure.
The method of claim 1 further comprising forming a first metallic structure electrically coupled to the second surface of the substrate.
The method of claim 1 wherein the substrate is characterized by a first n-type dopant concentration, the first GaN epitaxial layer is characterized by a second n- type dopant concentration less than the first n-type dopant concentration, and the second GaN epitaxial layer is characterized by a p-type dopant concentration greater than the second n-type dopant concentration and less than the first n-type dopant concentration.
The method of claim 1 further comprising forming a metallic structure electrically coupled to a portion of the first GaN epitaxial layer, wherein the metallic structure comprises a Schottky contact to the portion of the first GaN epitaxial layer.
The method of claim 1 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 1 wherein the edge termination structure circumscribes the active device.
A method of fabricating a vertical power device structure, the method comprising: forming an epitaxial structure by: providing a III -nitride substrate of a first conductivity type characterized by a first dopant concentration; forming a first I II -nitride epitaxial layer of the first conductivity type coupled to a first surface of the I II -nitride substrate; and Page 3 of 11 App l. No. 14/264,998 PATENT Amdt. dated Reply to Office Action of forming a second I II -nitride epitaxial layer of a second conductivity type coupled to the first I II-nitride epitaxial layer, wherein the second I II -nitride epitaxial layer has a surface opposing the first I II -nitride epitaxial layer; defining regions of the epitaxial structure by implanting ions into the surface of the second epitaxial layer to form an implantation region of the epitaxial structure, wherein the implantation region electrically isolates a device region of the epitaxial structure from an edge termination region of the epitaxial structure; forming one or more active devices using at least the device region of the epitaxial structure; and forming an edge termination structure using at least the edge termination region of the epitaxial structure.
The method of claim 11 further comprising forming a Schottky metallic structure coupled to the first epitaxial layer.
The method of claim 11 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 11 wherein the edge termination structure circumscribes the one or more active devices.
The method of claim 11 wherein the first I II -nitride epitaxial layer is characterized by a second dopant concentration less than the first dopant concentration.
The method of claim 11 wherein forming the edge termination structure comprises forming three or more edge termination elements with predetermined spaces between each of the three or more edge termination elements, wherein: a first spacing of the predetermined spaces is located closer to the one or more active devices than a second spacing of the predetermined spaces; and a width of the first spacing is smaller than a width of the second spacing. Page 4 of 11
Layer stacks claimed or described, ordered top of device to substrate.
edge termination structure with active device (GaN-based)
vertical power device structure with edge termination (III-nitride based)
Materials described outside the worked examples.
GaN substrate (first conductivity type)
GaN
III-nitride substrate (first conductivity type)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,171,751Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
FIGS. 2-7 are simplified cross-sectional diagrams illustrating the fabrication of a Schottky diode in gallium-nitride with edge termination structures formed …
FIG. 3 illustrates the formation of a second GaN epitaxial layer 301 above the first GaN epitaxial layer 201. The second GaN epitaxial layer 301, from which …
FIG. 4 illustrates the formation of a first metallic structure 401 below the GaN substrate 200. The first metallic structure 401 can be one or more layers of …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 6 illustrates the formation of a second metallic structure 601 coupled to the exposed portion 510 of the first GaN epitaxial layer 201. The second metallic …
FIG. 7 illustrates the formation of metallic field plate 701 -2 coupled to metallic structure 601 and to dielectric layer 702, which may also provide some …
FIG. 8A. The structure properties, such as dopant concentrations and thicknesses, can vary from those of a Schottky diode, depending on the desired …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 10 illustrates the formation of metallic field plate 1002 coupled to metallic structure 901 and dielectric layer 1001. The metallic field plate 1002 can be …
FIG. 11 is simplified cross-sectional diagram illustrating a vertical JFET with edge termination structures according to another embodiment of the present …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in
FIG. 15 is a simplified flowchart illustrating a method of fabricating a Schottky diode with edge termination structures formed through ion implantation into an …
FIG. 16 is a simplified flowchart illustrating a method of fabricating a PIN or PN diode with edge termination structures in a I II -nitride material, according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an edge termination structure, the method comprising: providing a substrate of a first conductivity type, the substrate having a first surface and a second surface; forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate; forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type, the second GaN epitaxial layer being coupled to the first GaN epitaxial layer; implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer; and forming an active device coupled to the second region of the second GaN epitaxial layer; and wherein the third region of the second GaN epitaxial layer comprises an edge termination structure.
The method of claim 1 further comprising forming a first metallic structure electrically coupled to the second surface of the substrate.
The method of claim 1 wherein the substrate is characterized by a first n-type dopant concentration, the first GaN epitaxial layer is characterized by a second n- type dopant concentration less than the first n-type dopant concentration, and the second GaN epitaxial layer is characterized by a p-type dopant concentration greater than the second n-type dopant concentration and less than the first n-type dopant concentration.
The method of claim 1 further comprising forming a metallic structure electrically coupled to a portion of the first GaN epitaxial layer, wherein the metallic structure comprises a Schottky contact to the portion of the first GaN epitaxial layer.
The method of claim 1 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 1 wherein the edge termination structure circumscribes the active device.
A method of fabricating a vertical power device structure, the method comprising: forming an epitaxial structure by: providing a III -nitride substrate of a first conductivity type characterized by a first dopant concentration; forming a first I II -nitride epitaxial layer of the first conductivity type coupled to a first surface of the I II -nitride substrate; and Page 3 of 11 App l. No. 14/264,998 PATENT Amdt. dated Reply to Office Action of forming a second I II -nitride epitaxial layer of a second conductivity type coupled to the first I II-nitride epitaxial layer, wherein the second I II -nitride epitaxial layer has a surface opposing the first I II -nitride epitaxial layer; defining regions of the epitaxial structure by implanting ions into the surface of the second epitaxial layer to form an implantation region of the epitaxial structure, wherein the implantation region electrically isolates a device region of the epitaxial structure from an edge termination region of the epitaxial structure; forming one or more active devices using at least the device region of the epitaxial structure; and forming an edge termination structure using at least the edge termination region of the epitaxial structure.
The method of claim 11 further comprising forming a Schottky metallic structure coupled to the first epitaxial layer.
The method of claim 11 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 11 wherein the edge termination structure circumscribes the one or more active devices.
The method of claim 11 wherein the first I II -nitride epitaxial layer is characterized by a second dopant concentration less than the first dopant concentration.
The method of claim 11 wherein forming the edge termination structure comprises forming three or more edge termination elements with predetermined spaces between each of the three or more edge termination elements, wherein: a first spacing of the predetermined spaces is located closer to the one or more active devices than a second spacing of the predetermined spaces; and a width of the first spacing is smaller than a width of the second spacing. Page 4 of 11
Layer stacks claimed or described, ordered top of device to substrate.
edge termination structure with active device (GaN-based)
vertical power device structure with edge termination (III-nitride based)
Materials described outside the worked examples.
GaN substrate (first conductivity type)
GaN
III-nitride substrate (first conductivity type)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,171,751Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
FIGS. 2-7 are simplified cross-sectional diagrams illustrating the fabrication of a Schottky diode in gallium-nitride with edge termination structures formed …
FIG. 3 illustrates the formation of a second GaN epitaxial layer 301 above the first GaN epitaxial layer 201. The second GaN epitaxial layer 301, from which …
FIG. 4 illustrates the formation of a first metallic structure 401 below the GaN substrate 200. The first metallic structure 401 can be one or more layers of …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 6 illustrates the formation of a second metallic structure 601 coupled to the exposed portion 510 of the first GaN epitaxial layer 201. The second metallic …
FIG. 7 illustrates the formation of metallic field plate 701 -2 coupled to metallic structure 601 and to dielectric layer 702, which may also provide some …
FIG. 8A. The structure properties, such as dopant concentrations and thicknesses, can vary from those of a Schottky diode, depending on the desired …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 10 illustrates the formation of metallic field plate 1002 coupled to metallic structure 901 and dielectric layer 1001. The metallic field plate 1002 can be …
FIG. 11 is simplified cross-sectional diagram illustrating a vertical JFET with edge termination structures according to another embodiment of the present …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in
FIG. 15 is a simplified flowchart illustrating a method of fabricating a Schottky diode with edge termination structures formed through ion implantation into an …
FIG. 16 is a simplified flowchart illustrating a method of fabricating a PIN or PN diode with edge termination structures in a I II -nitride material, according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an edge termination structure, the method comprising: providing a substrate of a first conductivity type, the substrate having a first surface and a second surface; forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate; forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type, the second GaN epitaxial layer being coupled to the first GaN epitaxial layer; implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer; and forming an active device coupled to the second region of the second GaN epitaxial layer; and wherein the third region of the second GaN epitaxial layer comprises an edge termination structure.
The method of claim 1 further comprising forming a first metallic structure electrically coupled to the second surface of the substrate.
The method of claim 1 wherein the substrate is characterized by a first n-type dopant concentration, the first GaN epitaxial layer is characterized by a second n- type dopant concentration less than the first n-type dopant concentration, and the second GaN epitaxial layer is characterized by a p-type dopant concentration greater than the second n-type dopant concentration and less than the first n-type dopant concentration.
The method of claim 1 further comprising forming a metallic structure electrically coupled to a portion of the first GaN epitaxial layer, wherein the metallic structure comprises a Schottky contact to the portion of the first GaN epitaxial layer.
The method of claim 1 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 1 wherein the edge termination structure circumscribes the active device.
A method of fabricating a vertical power device structure, the method comprising: forming an epitaxial structure by: providing a III -nitride substrate of a first conductivity type characterized by a first dopant concentration; forming a first I II -nitride epitaxial layer of the first conductivity type coupled to a first surface of the I II -nitride substrate; and Page 3 of 11 App l. No. 14/264,998 PATENT Amdt. dated Reply to Office Action of forming a second I II -nitride epitaxial layer of a second conductivity type coupled to the first I II-nitride epitaxial layer, wherein the second I II -nitride epitaxial layer has a surface opposing the first I II -nitride epitaxial layer; defining regions of the epitaxial structure by implanting ions into the surface of the second epitaxial layer to form an implantation region of the epitaxial structure, wherein the implantation region electrically isolates a device region of the epitaxial structure from an edge termination region of the epitaxial structure; forming one or more active devices using at least the device region of the epitaxial structure; and forming an edge termination structure using at least the edge termination region of the epitaxial structure.
The method of claim 11 further comprising forming a Schottky metallic structure coupled to the first epitaxial layer.
The method of claim 11 further comprising forming a metallic field plate coupled to the edge termination structure.
The method of claim 11 wherein the edge termination structure circumscribes the one or more active devices.
The method of claim 11 wherein the first I II -nitride epitaxial layer is characterized by a second dopant concentration less than the first dopant concentration.
The method of claim 11 wherein forming the edge termination structure comprises forming three or more edge termination elements with predetermined spaces between each of the three or more edge termination elements, wherein: a first spacing of the predetermined spaces is located closer to the one or more active devices than a second spacing of the predetermined spaces; and a width of the first spacing is smaller than a width of the second spacing. Page 4 of 11
Layer stacks claimed or described, ordered top of device to substrate.
edge termination structure with active device (GaN-based)
vertical power device structure with edge termination (III-nitride based)
Materials described outside the worked examples.
GaN substrate (first conductivity type)
GaN
III-nitride substrate (first conductivity type)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-1 B are simplified cross-sectional diagrams of a portion of a semiconductor device, illustrating how edge termination structures improve the …
Related documents with shared materials, methods, properties, or citations.
first III-nitride epitaxial layer (first conductivity type)
second III-nitride epitaxial layer (second conductivity type)
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in
first III-nitride epitaxial layer (first conductivity type)
second III-nitride epitaxial layer (second conductivity type)
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in
first III-nitride epitaxial layer (first conductivity type)
second III-nitride epitaxial layer (second conductivity type)
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in
first III-nitride epitaxial layer (first conductivity type)
second III-nitride epitaxial layer (second conductivity type)
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 5 is a simplified cross-sectional diagram illustrating ion implantation into a portion of the second GaN epitaxial layer 301 to form electrically isolated …
FIG. 9 illustrates the formation of a second metallic structure 901 (in addition to the metallic structure 401) electrically coupled to at least a portion of …
FIG. 12 illustrates a top view of an embodiment of a transistor structure with edge termination structure comprising three edge termination elements (e.g. …
FIG. 13, illustrating how edge termination structures, such as guard rings 1420, can shaped differently to accommodate differently-shaped semiconductor …
FIG. 14 illustrates yet another embodiment of a transistor structure similar to the embodiment shown in