Patent
US 9,362,719GaN-BASED QUANTUM DOT VISIBLE LASER
Pallab Bhattacharya
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,362,719Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser comprising: a contact layer structure for injecting conduction carriers into an active region of the laser; a semiconductor optical waveguide structure; a laser cavity; and a GaN-based quantum dot layer structure within the laser cavity and configured as the active region of the laser, the quantum dot layer structure comprising at least one layer of quantum dots each positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure and the quantum dot layer structure being configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a linewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of no more than about 5 nm over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold injection current density of 1.2 kA/cm 2.
The laser of claim 1, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The laser of claim 1, wherein the contact layer structure comprises a p- type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The laser of claim 1, wherein the semiconductor optical waveguide structure comprises AIGaN cladding layers surrounding one or more InGaN waveguide layers positioned to confine the emission from the quantum dot layer structure.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the laser emission at a wavelength of 524 nm having a linewidth at 1 nm or smaller.
The laser of claim 1, wherein the laser has a threshold injection current density as low as 1.2 kA/cm 2 for emissions in a green region with a wavelength of 524nm.
1 0. The laser of claim 1, wherein each of the plurality of quantum dots has a base width of about 50 nm and a height of about 3 nm.
The laser of claim 1, wherein each of the plurality of quantum dots has a disk-like structure having a circular or near circular base.
The laser of claim 1, wherein each layer of quantum dots has an areal density of 1 x 10 10 cm⁻²-10 x 1 010 cm⁻².
The laser of claim 1, wherein the laser cavity structure comprises a first facet and a second facet, wherein the quantum dot layer structure and the semiconductor optical waveguide structure are disposed between the first facet and the second fact, and wherein the first facet and the second facet have been fabricated using a focused ion beam technique.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 400 nm⁻⁴⁹⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 490 nm⁻⁵⁷⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaN/AIGaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaAIN/AIGa I nN quantum dots.
A method of forming a laser structure, the method comprising: providing a contact layer structure for injecting conduction carriers into the active region of the laser structure; and providing the laser cavity confining the active structure, to produce the laser output; 3 Application No. 13/721, 930 Docket No.: 30275/46787A Amendment dated After Final Office Action of forming a semiconductor optical waveguide structure on a GaN substrate or on a GaN template on a foreign substrate; forming a GaN-based quantum dot layer structure as an active region of the laser structure when confined within a laser cavity, forming the quantum dot layer structure from at least one layer of quantum dots, each quantum dot positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure, wherein the quantum dot layer structure is formed to have an InGaN/GaN structure and is configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a l inewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of about 5 nm or less over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold iniection current density of 1.2 kA/cm 2.
The method of claim 16, wherein providing the laser cavity comprises using a focused ion beam etching process to form opposing facets in the laser structure.
The method of claim 16, wherein providing the laser cavity comprises using a cleaving process to form opposing facets in the laser structure
The method of claim 16, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The method of claim 16, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The method of claim 16, further comprising forming a contact layer structure for the laser structure, the contact layer structure comprising a p-type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The method of claim 16, further comprising forming an electron blocking layer positioned adjacent the quantum dot laser structure for reducing leakage of injected electrons from the contact layer structure.
The method of claim 16, wherein each of the quantum dots has a base width of about 50 nm and a height of about 3 nm.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed of quantum dots formed in a self-organized manner.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed using bottom-up or top-down nano-patterning.
The method of claim 16, wherein the semiconductor optical waveguide is formed on the GaN template, and wherein the foreign substrate is sapphire, silicon carbon (SiC), silicon, a glass substrate, or a composition thereof.
The method of claim 16, wherein the formation of self-organized GaN- based quantum dots are formed using molecular beam epitaxy, metal-organic vapor phase epitaxy, atomic layer deposition, hydride vapor phase epitaxy, or a combination thereof.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve three-dimensional quantum confinement.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve an electron-hole overlap that is higher, by a factor of at least 2, than that of a corresponding quantum well device, a radiative lifetime that is at least an order of magnitude smaller than a corresponding quantum well device, and/or a polarization field at least one order of magnitude smaller than that of a corresponding quantum well device.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum dot visible laser diode
Materials described outside the worked examples.
InGaN/GaN quantum dots
InGaN/GaN
GaN-based quantum dot
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
threshold injection current density (green laser, 524 nm) | 1.2 kA/cm² | InGaN/GaN |
laser emission linewidth |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,719Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser comprising: a contact layer structure for injecting conduction carriers into an active region of the laser; a semiconductor optical waveguide structure; a laser cavity; and a GaN-based quantum dot layer structure within the laser cavity and configured as the active region of the laser, the quantum dot layer structure comprising at least one layer of quantum dots each positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure and the quantum dot layer structure being configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a linewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of no more than about 5 nm over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold injection current density of 1.2 kA/cm 2.
The laser of claim 1, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The laser of claim 1, wherein the contact layer structure comprises a p- type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The laser of claim 1, wherein the semiconductor optical waveguide structure comprises AIGaN cladding layers surrounding one or more InGaN waveguide layers positioned to confine the emission from the quantum dot layer structure.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the laser emission at a wavelength of 524 nm having a linewidth at 1 nm or smaller.
The laser of claim 1, wherein the laser has a threshold injection current density as low as 1.2 kA/cm 2 for emissions in a green region with a wavelength of 524nm.
1 0. The laser of claim 1, wherein each of the plurality of quantum dots has a base width of about 50 nm and a height of about 3 nm.
The laser of claim 1, wherein each of the plurality of quantum dots has a disk-like structure having a circular or near circular base.
The laser of claim 1, wherein each layer of quantum dots has an areal density of 1 x 10 10 cm⁻²-10 x 1 010 cm⁻².
The laser of claim 1, wherein the laser cavity structure comprises a first facet and a second facet, wherein the quantum dot layer structure and the semiconductor optical waveguide structure are disposed between the first facet and the second fact, and wherein the first facet and the second facet have been fabricated using a focused ion beam technique.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 400 nm⁻⁴⁹⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 490 nm⁻⁵⁷⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaN/AIGaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaAIN/AIGa I nN quantum dots.
A method of forming a laser structure, the method comprising: providing a contact layer structure for injecting conduction carriers into the active region of the laser structure; and providing the laser cavity confining the active structure, to produce the laser output; 3 Application No. 13/721, 930 Docket No.: 30275/46787A Amendment dated After Final Office Action of forming a semiconductor optical waveguide structure on a GaN substrate or on a GaN template on a foreign substrate; forming a GaN-based quantum dot layer structure as an active region of the laser structure when confined within a laser cavity, forming the quantum dot layer structure from at least one layer of quantum dots, each quantum dot positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure, wherein the quantum dot layer structure is formed to have an InGaN/GaN structure and is configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a l inewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of about 5 nm or less over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold iniection current density of 1.2 kA/cm 2.
The method of claim 16, wherein providing the laser cavity comprises using a focused ion beam etching process to form opposing facets in the laser structure.
The method of claim 16, wherein providing the laser cavity comprises using a cleaving process to form opposing facets in the laser structure
The method of claim 16, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The method of claim 16, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The method of claim 16, further comprising forming a contact layer structure for the laser structure, the contact layer structure comprising a p-type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The method of claim 16, further comprising forming an electron blocking layer positioned adjacent the quantum dot laser structure for reducing leakage of injected electrons from the contact layer structure.
The method of claim 16, wherein each of the quantum dots has a base width of about 50 nm and a height of about 3 nm.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed of quantum dots formed in a self-organized manner.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed using bottom-up or top-down nano-patterning.
The method of claim 16, wherein the semiconductor optical waveguide is formed on the GaN template, and wherein the foreign substrate is sapphire, silicon carbon (SiC), silicon, a glass substrate, or a composition thereof.
The method of claim 16, wherein the formation of self-organized GaN- based quantum dots are formed using molecular beam epitaxy, metal-organic vapor phase epitaxy, atomic layer deposition, hydride vapor phase epitaxy, or a combination thereof.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve three-dimensional quantum confinement.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve an electron-hole overlap that is higher, by a factor of at least 2, than that of a corresponding quantum well device, a radiative lifetime that is at least an order of magnitude smaller than a corresponding quantum well device, and/or a polarization field at least one order of magnitude smaller than that of a corresponding quantum well device.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum dot visible laser diode
Materials described outside the worked examples.
InGaN/GaN quantum dots
InGaN/GaN
GaN-based quantum dot
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
threshold injection current density (green laser, 524 nm) | 1.2 kA/cm² | InGaN/GaN |
laser emission linewidth |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,719Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser comprising: a contact layer structure for injecting conduction carriers into an active region of the laser; a semiconductor optical waveguide structure; a laser cavity; and a GaN-based quantum dot layer structure within the laser cavity and configured as the active region of the laser, the quantum dot layer structure comprising at least one layer of quantum dots each positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure and the quantum dot layer structure being configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a linewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of no more than about 5 nm over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold injection current density of 1.2 kA/cm 2.
The laser of claim 1, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The laser of claim 1, wherein the contact layer structure comprises a p- type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The laser of claim 1, wherein the semiconductor optical waveguide structure comprises AIGaN cladding layers surrounding one or more InGaN waveguide layers positioned to confine the emission from the quantum dot layer structure.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the laser emission at a wavelength of 524 nm having a linewidth at 1 nm or smaller.
The laser of claim 1, wherein the laser has a threshold injection current density as low as 1.2 kA/cm 2 for emissions in a green region with a wavelength of 524nm.
1 0. The laser of claim 1, wherein each of the plurality of quantum dots has a base width of about 50 nm and a height of about 3 nm.
The laser of claim 1, wherein each of the plurality of quantum dots has a disk-like structure having a circular or near circular base.
The laser of claim 1, wherein each layer of quantum dots has an areal density of 1 x 10 10 cm⁻²-10 x 1 010 cm⁻².
The laser of claim 1, wherein the laser cavity structure comprises a first facet and a second facet, wherein the quantum dot layer structure and the semiconductor optical waveguide structure are disposed between the first facet and the second fact, and wherein the first facet and the second facet have been fabricated using a focused ion beam technique.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 400 nm⁻⁴⁹⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 490 nm⁻⁵⁷⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaN/AIGaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaAIN/AIGa I nN quantum dots.
A method of forming a laser structure, the method comprising: providing a contact layer structure for injecting conduction carriers into the active region of the laser structure; and providing the laser cavity confining the active structure, to produce the laser output; 3 Application No. 13/721, 930 Docket No.: 30275/46787A Amendment dated After Final Office Action of forming a semiconductor optical waveguide structure on a GaN substrate or on a GaN template on a foreign substrate; forming a GaN-based quantum dot layer structure as an active region of the laser structure when confined within a laser cavity, forming the quantum dot layer structure from at least one layer of quantum dots, each quantum dot positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure, wherein the quantum dot layer structure is formed to have an InGaN/GaN structure and is configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a l inewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of about 5 nm or less over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold iniection current density of 1.2 kA/cm 2.
The method of claim 16, wherein providing the laser cavity comprises using a focused ion beam etching process to form opposing facets in the laser structure.
The method of claim 16, wherein providing the laser cavity comprises using a cleaving process to form opposing facets in the laser structure
The method of claim 16, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The method of claim 16, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The method of claim 16, further comprising forming a contact layer structure for the laser structure, the contact layer structure comprising a p-type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The method of claim 16, further comprising forming an electron blocking layer positioned adjacent the quantum dot laser structure for reducing leakage of injected electrons from the contact layer structure.
The method of claim 16, wherein each of the quantum dots has a base width of about 50 nm and a height of about 3 nm.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed of quantum dots formed in a self-organized manner.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed using bottom-up or top-down nano-patterning.
The method of claim 16, wherein the semiconductor optical waveguide is formed on the GaN template, and wherein the foreign substrate is sapphire, silicon carbon (SiC), silicon, a glass substrate, or a composition thereof.
The method of claim 16, wherein the formation of self-organized GaN- based quantum dots are formed using molecular beam epitaxy, metal-organic vapor phase epitaxy, atomic layer deposition, hydride vapor phase epitaxy, or a combination thereof.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve three-dimensional quantum confinement.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve an electron-hole overlap that is higher, by a factor of at least 2, than that of a corresponding quantum well device, a radiative lifetime that is at least an order of magnitude smaller than a corresponding quantum well device, and/or a polarization field at least one order of magnitude smaller than that of a corresponding quantum well device.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum dot visible laser diode
Materials described outside the worked examples.
InGaN/GaN quantum dots
InGaN/GaN
GaN-based quantum dot
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
threshold injection current density (green laser, 524 nm) | 1.2 kA/cm² | InGaN/GaN |
laser emission linewidth |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,719Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser comprising: a contact layer structure for injecting conduction carriers into an active region of the laser; a semiconductor optical waveguide structure; a laser cavity; and a GaN-based quantum dot layer structure within the laser cavity and configured as the active region of the laser, the quantum dot layer structure comprising at least one layer of quantum dots each positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure and the quantum dot layer structure being configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a linewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of no more than about 5 nm over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold injection current density of 1.2 kA/cm 2.
The laser of claim 1, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The laser of claim 1, wherein the contact layer structure comprises a p- type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The laser of claim 1, wherein the semiconductor optical waveguide structure comprises AIGaN cladding layers surrounding one or more InGaN waveguide layers positioned to confine the emission from the quantum dot layer structure.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the laser emission at a wavelength of 524 nm having a linewidth at 1 nm or smaller.
The laser of claim 1, wherein the laser has a threshold injection current density as low as 1.2 kA/cm 2 for emissions in a green region with a wavelength of 524nm.
1 0. The laser of claim 1, wherein each of the plurality of quantum dots has a base width of about 50 nm and a height of about 3 nm.
The laser of claim 1, wherein each of the plurality of quantum dots has a disk-like structure having a circular or near circular base.
The laser of claim 1, wherein each layer of quantum dots has an areal density of 1 x 10 10 cm⁻²-10 x 1 010 cm⁻².
The laser of claim 1, wherein the laser cavity structure comprises a first facet and a second facet, wherein the quantum dot layer structure and the semiconductor optical waveguide structure are disposed between the first facet and the second fact, and wherein the first facet and the second facet have been fabricated using a focused ion beam technique.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 400 nm⁻⁴⁹⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure is configured to produce the emission at a wavelength of 490 nm⁻⁵⁷⁰ nm having a linewidth of 1 nm or smaller.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaN/AIGaN quantum dots.
The laser of claim 1, wherein the quantum dot layer structure comprises a plurality of layers of InGaAIN/AIGa I nN quantum dots.
A method of forming a laser structure, the method comprising: providing a contact layer structure for injecting conduction carriers into the active region of the laser structure; and providing the laser cavity confining the active structure, to produce the laser output; 3 Application No. 13/721, 930 Docket No.: 30275/46787A Amendment dated After Final Office Action of forming a semiconductor optical waveguide structure on a GaN substrate or on a GaN template on a foreign substrate; forming a GaN-based quantum dot layer structure as an active region of the laser structure when confined within a laser cavity, forming the quantum dot layer structure from at least one layer of quantum dots, each quantum dot positioned and sized in a self-organizing manner to produce (i) an array of self-organized quantum dots extending the entire at least one layer and characterized by strain relaxation induced from the self-organizing and (ii) a laser emission having a wavelength of 490 nm⁻⁵⁷⁰ nm [[400 nm⁻⁷⁰⁰ nm]] from the laser cavity structure, wherein the quantum dot layer structure is formed to have an InGaN/GaN structure and is configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, the laser emission having a l inewidth of 1 nm or smaller, the at least one layer of quantum dots exhibiting an wavelength shift on the laser emission of about 5 nm or less over a range of injection currents from an initial injection current to a saturation threshold current of the at least one layer of quantum dots, wherein the laser is characterized by a threshold iniection current density of 1.2 kA/cm 2.
The method of claim 16, wherein providing the laser cavity comprises using a focused ion beam etching process to form opposing facets in the laser structure.
The method of claim 16, wherein providing the laser cavity comprises using a cleaving process to form opposing facets in the laser structure
The method of claim 16, wherein the quantum dot layer structure is formed of InGaN quantum dots on a GaN substrate and capped with a GaN barrier to form InGaN/GaN quantum dots.
The method of claim 16, wherein the quantum dot layer structure comprises a plurality of layers of quantum dots.
The method of claim 16, further comprising forming a contact layer structure for the laser structure, the contact layer structure comprising a p-type contact layer formed of GaN and an n-type contact layer formed of a GaN n-type doped layer.
The method of claim 16, further comprising forming an electron blocking layer positioned adjacent the quantum dot laser structure for reducing leakage of injected electrons from the contact layer structure.
The method of claim 16, wherein each of the quantum dots has a base width of about 50 nm and a height of about 3 nm.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed of quantum dots formed in a self-organized manner.
The method of claim 16, wherein the GaN-based quantum dot layer structure is formed using bottom-up or top-down nano-patterning.
The method of claim 16, wherein the semiconductor optical waveguide is formed on the GaN template, and wherein the foreign substrate is sapphire, silicon carbon (SiC), silicon, a glass substrate, or a composition thereof.
The method of claim 16, wherein the formation of self-organized GaN- based quantum dots are formed using molecular beam epitaxy, metal-organic vapor phase epitaxy, atomic layer deposition, hydride vapor phase epitaxy, or a combination thereof.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve three-dimensional quantum confinement.
The method of claim 16, wherein the quantum dot layer structure is configured to achieve an electron-hole overlap that is higher, by a factor of at least 2, than that of a corresponding quantum well device, a radiative lifetime that is at least an order of magnitude smaller than a corresponding quantum well device, and/or a polarization field at least one order of magnitude smaller than that of a corresponding quantum well device.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN quantum dot visible laser diode
Materials described outside the worked examples.
InGaN/GaN quantum dots
InGaN/GaN
GaN-based quantum dot
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
threshold injection current density (green laser, 524 nm) | 1.2 kA/cm² | InGaN/GaN |
laser emission linewidth |
Related documents with shared materials, methods, properties, or citations.
GaN
AlGaN
InGaN waveguide
InGaN
foreign substrate (sapphire, SiC, silicon, glass)
InGaN/AlGaN quantum dots
InGaN/AlGaN
InGaAlN/AlGaInN quantum dots
InGaAlN/AlGaInN
| ≤ 1 nm |
InGaN/GaN |
wavelength shift over injection current range (initial to saturation threshold) | ≤ 5 nm | InGaN/GaN |
Pressure | 3–300 pA | — |
Thickness | 0–16 cm | — |
Temperature | 260–300 K | — |
Thickness | 400–440 nm | — |
Thickness | 440–490 nm | — |
Thickness | 570–590 nm | — |
Thickness | 590–620 nm | — |
Thickness | 620–700 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 490–570 nm | — |
Thickness | 400–490 nm | — |
GaN
AlGaN
InGaN waveguide
InGaN
foreign substrate (sapphire, SiC, silicon, glass)
InGaN/AlGaN quantum dots
InGaN/AlGaN
InGaAlN/AlGaInN quantum dots
InGaAlN/AlGaInN
| ≤ 1 nm |
InGaN/GaN |
wavelength shift over injection current range (initial to saturation threshold) | ≤ 5 nm | InGaN/GaN |
Pressure | 3–300 pA | — |
Thickness | 0–16 cm | — |
Temperature | 260–300 K | — |
Thickness | 400–440 nm | — |
Thickness | 440–490 nm | — |
Thickness | 570–590 nm | — |
Thickness | 590–620 nm | — |
Thickness | 620–700 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 490–570 nm | — |
Thickness | 400–490 nm | — |
GaN
AlGaN
InGaN waveguide
InGaN
foreign substrate (sapphire, SiC, silicon, glass)
InGaN/AlGaN quantum dots
InGaN/AlGaN
InGaAlN/AlGaInN quantum dots
InGaAlN/AlGaInN
| ≤ 1 nm |
InGaN/GaN |
wavelength shift over injection current range (initial to saturation threshold) | ≤ 5 nm | InGaN/GaN |
Pressure | 3–300 pA | — |
Thickness | 0–16 cm | — |
Temperature | 260–300 K | — |
Thickness | 400–440 nm | — |
Thickness | 440–490 nm | — |
Thickness | 570–590 nm | — |
Thickness | 590–620 nm | — |
Thickness | 620–700 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 490–570 nm | — |
Thickness | 400–490 nm | — |
GaN
AlGaN
InGaN waveguide
InGaN
foreign substrate (sapphire, SiC, silicon, glass)
InGaN/AlGaN quantum dots
InGaN/AlGaN
InGaAlN/AlGaInN quantum dots
InGaAlN/AlGaInN
| ≤ 1 nm |
InGaN/GaN |
wavelength shift over injection current range (initial to saturation threshold) | ≤ 5 nm | InGaN/GaN |
Pressure | 3–300 pA | — |
Thickness | 0–16 cm | — |
Temperature | 260–300 K | — |
Thickness | 400–440 nm | — |
Thickness | 440–490 nm | — |
Thickness | 570–590 nm | — |
Thickness | 590–620 nm | — |
Thickness | 620–700 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | 490–570 nm | — |
Thickness | 400–490 nm | — |