Patent
US 11,810,996 B2MONOLITHICALLY INTEGRATED INGAN/GAN QUANTUM NANOWIRE DEVICES
Zetian Mi, Yong-Ho Ra, Renjie Wang
The Regents of the University of Michigan, Ann Arbor, MI (US)·Nov. 7, 2023·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,810,996 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
FIG. 2 illustrates a single InGaN/GaN nanowire grown on sapphire substrate, in accordance with an example.
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 5A illustrates a process of atom adsorption to the surface of a nanowire during a fabrication growth process. Note that the variation of Indium (In) …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 7B. Some of the dimensions have been exaggerated for the purpose of clarity and better demonstration of concepts. Only two nanowires are shown here …
FIG. 8A is a schematic of a hole patterned titanium (Ti) mask showing the presence of hexagonal openings with different sizes, in accordance with an example.
FIGS. 9A-9E show the schematic illustrations showing the formation of a single InGaN/GaN nanowire grown on GaN coated sapphire substrate. The images marked as
FIG. 10A illustrates four p-contact metallic electrodes attached separately and independently to four nanowires of an InGaN/GaN quantum layer nanowire cluster, …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …
FIG. 110 shows the light-current characteristics (L-I) curves (1194A, 1194B, 1194C, and 1194D) of single stand- alone nanowire LED elements each with a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate; a plurality of nanowires coupled to and extending orthogonally from the substrate, wherein the nanowires are spaced distances apart from one another, wherein each nanowire of the plurality of nanowires comprises a respective active region and has a different respective effective diameter, wherein each said respective active region comprises a respective quantum structure com-prising a first group III element and a second group III element, wherein the ratio of concentrations of the first and second group III elements in each said respective quantum structure is dependent on the respective effec-tive diameter of said each nanowire, and wherein the plurality of nanowires comprises at least a first nanow-ire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color; and a passivation layer that fills the distances between the nanowires.
The device of claim 1, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 1, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 1, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 1, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 1, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 1, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 1, wherein the plurality of nanow-ires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 1, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 1, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires opposite the substrate.
A device, comprising: a substrate; and a plurality of nanowires coupled to and extending from the substrate, wherein the plurality of nanowires com-prises a pair of adjacent nanowires formed in a same step of a selective area epitaxial growth process, wherein the pair comprises a first nanowire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color, wherein each nanowire of the plurality of nanow-ires comprises a respective active region and has a respective effective diameter, wherein each said respec-tive active region comprises a respective quantum structure comprising a first group III element and a second group III element, and wherein the ratio of concentrations of the first and second group III ele-ments in each said respective quantum structure is dependent on the respective effective diameter of said each nanowire.
The device of claim 11, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 11, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 11, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 11, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 11, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 11, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 11, wherein the plurality of nanowires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 11, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 11, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated multi-color InGaN/GaN quantum nanowire cluster
InGaN/GaN quantum nanowire light emitting diode
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 80–1900 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,996 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
FIG. 2 illustrates a single InGaN/GaN nanowire grown on sapphire substrate, in accordance with an example.
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 5A illustrates a process of atom adsorption to the surface of a nanowire during a fabrication growth process. Note that the variation of Indium (In) …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 7B. Some of the dimensions have been exaggerated for the purpose of clarity and better demonstration of concepts. Only two nanowires are shown here …
FIG. 8A is a schematic of a hole patterned titanium (Ti) mask showing the presence of hexagonal openings with different sizes, in accordance with an example.
FIGS. 9A-9E show the schematic illustrations showing the formation of a single InGaN/GaN nanowire grown on GaN coated sapphire substrate. The images marked as
FIG. 10A illustrates four p-contact metallic electrodes attached separately and independently to four nanowires of an InGaN/GaN quantum layer nanowire cluster, …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …
FIG. 110 shows the light-current characteristics (L-I) curves (1194A, 1194B, 1194C, and 1194D) of single stand- alone nanowire LED elements each with a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate; a plurality of nanowires coupled to and extending orthogonally from the substrate, wherein the nanowires are spaced distances apart from one another, wherein each nanowire of the plurality of nanowires comprises a respective active region and has a different respective effective diameter, wherein each said respective active region comprises a respective quantum structure com-prising a first group III element and a second group III element, wherein the ratio of concentrations of the first and second group III elements in each said respective quantum structure is dependent on the respective effec-tive diameter of said each nanowire, and wherein the plurality of nanowires comprises at least a first nanow-ire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color; and a passivation layer that fills the distances between the nanowires.
The device of claim 1, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 1, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 1, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 1, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 1, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 1, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 1, wherein the plurality of nanow-ires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 1, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 1, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires opposite the substrate.
A device, comprising: a substrate; and a plurality of nanowires coupled to and extending from the substrate, wherein the plurality of nanowires com-prises a pair of adjacent nanowires formed in a same step of a selective area epitaxial growth process, wherein the pair comprises a first nanowire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color, wherein each nanowire of the plurality of nanow-ires comprises a respective active region and has a respective effective diameter, wherein each said respec-tive active region comprises a respective quantum structure comprising a first group III element and a second group III element, and wherein the ratio of concentrations of the first and second group III ele-ments in each said respective quantum structure is dependent on the respective effective diameter of said each nanowire.
The device of claim 11, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 11, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 11, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 11, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 11, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 11, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 11, wherein the plurality of nanowires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 11, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 11, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated multi-color InGaN/GaN quantum nanowire cluster
InGaN/GaN quantum nanowire light emitting diode
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 80–1900 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,996 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
FIG. 2 illustrates a single InGaN/GaN nanowire grown on sapphire substrate, in accordance with an example.
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 5A illustrates a process of atom adsorption to the surface of a nanowire during a fabrication growth process. Note that the variation of Indium (In) …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 7B. Some of the dimensions have been exaggerated for the purpose of clarity and better demonstration of concepts. Only two nanowires are shown here …
FIG. 8A is a schematic of a hole patterned titanium (Ti) mask showing the presence of hexagonal openings with different sizes, in accordance with an example.
FIGS. 9A-9E show the schematic illustrations showing the formation of a single InGaN/GaN nanowire grown on GaN coated sapphire substrate. The images marked as
FIG. 10A illustrates four p-contact metallic electrodes attached separately and independently to four nanowires of an InGaN/GaN quantum layer nanowire cluster, …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …
FIG. 110 shows the light-current characteristics (L-I) curves (1194A, 1194B, 1194C, and 1194D) of single stand- alone nanowire LED elements each with a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate; a plurality of nanowires coupled to and extending orthogonally from the substrate, wherein the nanowires are spaced distances apart from one another, wherein each nanowire of the plurality of nanowires comprises a respective active region and has a different respective effective diameter, wherein each said respective active region comprises a respective quantum structure com-prising a first group III element and a second group III element, wherein the ratio of concentrations of the first and second group III elements in each said respective quantum structure is dependent on the respective effec-tive diameter of said each nanowire, and wherein the plurality of nanowires comprises at least a first nanow-ire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color; and a passivation layer that fills the distances between the nanowires.
The device of claim 1, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 1, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 1, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 1, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 1, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 1, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 1, wherein the plurality of nanow-ires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 1, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 1, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires opposite the substrate.
A device, comprising: a substrate; and a plurality of nanowires coupled to and extending from the substrate, wherein the plurality of nanowires com-prises a pair of adjacent nanowires formed in a same step of a selective area epitaxial growth process, wherein the pair comprises a first nanowire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color, wherein each nanowire of the plurality of nanow-ires comprises a respective active region and has a respective effective diameter, wherein each said respec-tive active region comprises a respective quantum structure comprising a first group III element and a second group III element, and wherein the ratio of concentrations of the first and second group III ele-ments in each said respective quantum structure is dependent on the respective effective diameter of said each nanowire.
The device of claim 11, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 11, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 11, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 11, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 11, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 11, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 11, wherein the plurality of nanowires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 11, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 11, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated multi-color InGaN/GaN quantum nanowire cluster
InGaN/GaN quantum nanowire light emitting diode
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 80–1900 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,996 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
FIG. 2 illustrates a single InGaN/GaN nanowire grown on sapphire substrate, in accordance with an example.
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 5A illustrates a process of atom adsorption to the surface of a nanowire during a fabrication growth process. Note that the variation of Indium (In) …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 7B. Some of the dimensions have been exaggerated for the purpose of clarity and better demonstration of concepts. Only two nanowires are shown here …
FIG. 8A is a schematic of a hole patterned titanium (Ti) mask showing the presence of hexagonal openings with different sizes, in accordance with an example.
FIGS. 9A-9E show the schematic illustrations showing the formation of a single InGaN/GaN nanowire grown on GaN coated sapphire substrate. The images marked as
FIG. 10A illustrates four p-contact metallic electrodes attached separately and independently to four nanowires of an InGaN/GaN quantum layer nanowire cluster, …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …
FIG. 110 shows the light-current characteristics (L-I) curves (1194A, 1194B, 1194C, and 1194D) of single stand- alone nanowire LED elements each with a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate; a plurality of nanowires coupled to and extending orthogonally from the substrate, wherein the nanowires are spaced distances apart from one another, wherein each nanowire of the plurality of nanowires comprises a respective active region and has a different respective effective diameter, wherein each said respective active region comprises a respective quantum structure com-prising a first group III element and a second group III element, wherein the ratio of concentrations of the first and second group III elements in each said respective quantum structure is dependent on the respective effec-tive diameter of said each nanowire, and wherein the plurality of nanowires comprises at least a first nanow-ire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color; and a passivation layer that fills the distances between the nanowires.
The device of claim 1, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 1, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 1, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 1, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 1, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 1, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 1, wherein the plurality of nanow-ires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 1, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 1, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires opposite the substrate.
A device, comprising: a substrate; and a plurality of nanowires coupled to and extending from the substrate, wherein the plurality of nanowires com-prises a pair of adjacent nanowires formed in a same step of a selective area epitaxial growth process, wherein the pair comprises a first nanowire that emits a first color of light and a second nanowire that emits a second color of light that is different from the first color, wherein each nanowire of the plurality of nanow-ires comprises a respective active region and has a respective effective diameter, wherein each said respec-tive active region comprises a respective quantum structure comprising a first group III element and a second group III element, and wherein the ratio of concentrations of the first and second group III ele-ments in each said respective quantum structure is dependent on the respective effective diameter of said each nanowire.
The device of claim 11, wherein the first nanowire and the second nanowire have different effective diameters.
The device of claim 11, wherein atoms of the first group III element are disposed further into the nanowires than atoms of the second group III element, wherein the first nanowire has an effective diameter greater than an effective diameter of the second nanowire, and wherein the first nanowire has a concentration of the second group III ele-ment less than a concentration of the second group III element in the second nanowire.
The device of claim 11, wherein the first group III element is gallium, and wherein the second group III ele-ment is indium.
The device of claim 11, wherein each said respective quantum structure comprises alternating layers of indium gallium nitride and gallium nitride.
The device of claim 11, wherein each said respective quantum structure comprises layers of quantum dots, wherein the quantum dots in the second nanowire are aligned along the longitudinal axis of the second nanowire, and wherein the quantum dots in the first nanowire are distributed in a semi-polar plane of the first nanowire.
The device of claim 11, wherein each nanowire of the plurality of nanowires comprises an element of a light emitting diode.
The device of claim 11, wherein the plurality of nanowires comprises nanowires with a cross-section having a shape selected from the group consisting of: cylindrical, hexagonal, rectangular, and triangular.
The device of claim 11, wherein the first color and the second color are in respective spectral ranges selected from the group consisting of: a blue spectral range; a red spectral range; a green spectral range, and an orange spectral range.
The device of claim 11, further comprising: a plurality of electrodes, wherein each of the plurality of electrodes are coupled independently to respective ones of the plurality of nanowires. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated multi-color InGaN/GaN quantum nanowire cluster
InGaN/GaN quantum nanowire light emitting diode
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Note that the dimensions and the various components are not drawn to scale here in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 80–1900 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
gallium
Ga
indium
In
silicon substrate
Si
sapphire substrate
Al₂O₃
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …
gallium
Ga
indium
In
silicon substrate
Si
sapphire substrate
Al₂O₃
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …
gallium
Ga
indium
In
silicon substrate
Si
sapphire substrate
Al₂O₃
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …
gallium
Ga
indium
In
silicon substrate
Si
sapphire substrate
Al₂O₃
FIG. 3 illustrates SEM images of InGaN/GaN nanowires of various diameters, in accordance with an example.
FIG. 4B is a plot of normalized Photoluminescence (PL) spectra versus wavelength for the InGaN/GaN quantum dot nanowires in Sample II, of
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 6A illustrates STEM-HAADF (Scanning Transmis- sion Electron Microscope—High-Angle Annular Dark- Field) images for InGaN/GaN quantum dot nanowires with …
FIG. 11A is a plot of the current-voltage characteristics of InGaN/GaN quantum dot nanowires with different diam- eters, in accordance with an example. The …