LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON

Can Bayram; Muhammad Ali Johar

Patent

Atlas literature

Patent

US 12,610,762 B2

LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON

Can Bayram, Muhammad Ali Johar

The Board of Trustees of the University of Illinois, Urbana, IL (US)·Apr. 21, 2026·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

process tool top view

FIG. 1A illustrating semiconductor patterning directions and axes of the silicon crystal according to various embodiments.

FIG. 2

FIG. 2F are processing step diagrams illustrating a method for manufacturing a Group III-nitride (e.g., gallium nitride (GaN)) device according to at least …

FIG. 3

FIG. 3 is a cross-section view of a completed Group III-nitride device according to some embodiments.

FIG. 4

FIG. 4 is a diagram of a cross-section view of a GaN portion of a GaN device according to some embodiments.

FIG. 5

FIG. 5 is a ﬂow chart of a method for large area synthesis fabrication of cubic GaN (c-GaN) on silicon according to some embodiments.

FIG. 6

FIG. 6E are a series of cross-section views of large area synthesis fabri- cation of c-GaN layers together with corresponding fabri- cation operations …

FIG. 7

process tool top view

FIG. 7B is a scanning electron microscope (SEM) image of a top view of multiple parallel-oriented U-shaped grooves such as the U-shaped groove of

FIG. 8

process tool top view

FIG. 8B is an SEM image of a cross-section view of the wafer of

FIG. 9

process tool top view

FIG. 9A is a cross-section view of a c-GaN strip grown within a U-shaped groove and illustrating directionality of an underlying h-GaN strip and Si-based …

FIG. 10

FIG. 10C is a plan-view transmission electron microscopy (plan-view TEM) image of a zoomed-in surface topology of several c-GaN strips according to an …

FIG. 11

FIG. 11A is a ﬂow chart of a ﬁrst series of operations for removing low-temperature, aluminum nitride (LT-AlN) from the c-GaN-grown strips according at least …

FIG. 12

process tool top view

FIG. 12B is an SEM image of a cross-section view of the wafer of

FIG. 13

FIG. 13B is a ﬂow chart of a second series of operations for removing LT-AlN and patterned oxide formed between 20 the multiple c-GaN-grown strips according to …

FIG. 14

process tool top view

FIG. 14B is an SEM image of a cross-section view of the wafer of

FIG. 15

FIG. 15B is a second set of operations for removing LT-AlN, patterned oxide, and h-GaN from the c-GaN-grown strip layers according to at least one embodiment. …

FIG. 16

process tool top view

FIG. 16B is an SEM image of a cross-section view of the 45 wafer of

FIG. 17

process tool top view

FIG. 17A is a plan-view TEM image of a top view of multiple c-GaN-grown strips as discussed herein illustrating 50 that the c-GaN-grown strips are …

FIG. 18

FIG. 18 is a SEM image of a zoomed-in portion of a 60 c-GaN-grown strip illustrated more particularly and that has a facet density that is between …

FIG. 19

FIG. 19 is a perspective view of an LED stack formed 65 from multiple GaN-based structures formed as discussed herein according to at least one embodiment. B₂

FIG. 20

FIG. 20 is a laser diode formed from at least one GaN- based structure formed as discussed herein according to at least one embodiment.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 13 dependent

1
IndependentSic-GaNh-GaNbuffer layerburied substrateGaN wafer with c-GaN structures (no wet etch)
A wafer comprising: a buried substrate; a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and sili-con sidewalls (111) at an angle to the buried substrate; a buffer layer disposed within the multiple U-shaped grooves; and multiple gallium nitride (GaN)-based structures having steeply angled sidewalls disposed on and protruding above the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein an upper layer of the c-GaN is parallel to the layer of silicon (100), is free of threading dislocations, and comprises one or more stacking faults.
1. 2
  Dependent← claim 1buried substrate (silicon, oxide, dielectric, or combination)GaN wafer with c-GaN structures (no wet etch)
  The wafer of claim 1, wherein the buried substrate is one of silicon, an oxide, a dielectric, or a combination thereof.
2. 3
  Dependent← claim 1GaN wafer with c-GaN structures (no wet etch)
  The wafer of claim 1, wherein the steeply angled sidewalls of the multiple GaN-based structures extend more than twice a height of the U-shaped grooves above the layer of silicon (100).
3. 4
  Dependent← claim 1c-GaNGaN wafer with c-GaN structures (no wet etch)
  The wafer of claim 1, wherein a facet density of the c-GaN is between approximately 3-4×104 per centimeter.
5
IndependentSic-GaNh-GaNbuffer layerburied substrateGaN wafer with c-GaN structures (wet-etched h-GaN sidewalls)
A wafer comprising: a buried substrate; a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and sili-con sidewalls (111) at an angle to the buried substrate; a buffer layer disposed on top of the layer of silicon (100) within the multiple U-shaped grooves; and multiple gallium nitride (GaN)-based structures having steeply angled sidewalls disposed on and protruding above the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein at least sidewall por-tions of the h-GaN of the multiple GaN-based struc-tures are wet-etched, wherein an upper layer of the c-GaN is parallel to the layer of silicon (100), is free of threading dislocations, and comprises one or more stacking faults.
1. 6
  Dependent← claim 5h-GaNGaN wafer with c-GaN structures (wet-etched h-GaN sidewalls)
  The wafer of claim 5, wherein the sidewall portions of the h-GaN of each GaN-based structure is curved from being wet-etched.
2. 7
  Dependent← claim 5buried substrate (silicon, oxide, dielectric, or combination)GaN wafer with c-GaN structures (wet-etched h-GaN sidewalls)
  The wafer of claim 5, wherein the buried substrate is one of silicon, an oxide, a dielectric, or a combination thereof.
3. 8
  Dependent← claim 5GaN wafer with c-GaN structures (wet-etched h-GaN sidewalls)
  The wafer of claim 5, wherein the vertical steeply angled sidewalls of the multiple GaN-based structures B₂ extend more than twice a height of the U-shaped grooves above the layer of silicon (100).
4. 9
  Dependent← claim 5c-GaNGaN wafer with c-GaN structures (wet-etched h-GaN sidewalls)
  The wafer of claim 5, wherein a facet density of the c-GaN is between approximately 3-4×104 per centimeter.
10
IndependentSibuffer layerburied substratecubic Group-III nitridehexagonal Group-III nitrideGroup-III nitride wafer with cubic Group-III nitride structures
A wafer comprising: a buried substrate; a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and sili-con sidewalls (111) at an angle to the buried substrate; a buffer layer disposed within the multiple U-shaped grooves; and multiple Group-III nitride-based structures having steeply angled sidewalls disposed on and protruding above the multiple U-shaped grooves, the multiple Group-III nitride-based structures each including a cubic Group-III nitride formed at merged growth fronts of hexagonal Group-III nitride that extend from the silicon sidewalls (111), wherein an upper layer of the cubic Group-III nitride is parallel to the layer of silicon (100), is free of threading dislocations, and comprises one or more stacking faults.
1. 11
  Dependent← claim 10c-GaNh-GaNGroup-III nitride wafer with cubic Group-III nitride structures
  The wafer of claim 10, wherein the multiple Group-III nitride-based structures are comprised of gallium nitride (GaN).
2. 13
  Dependent← claim 10hexagonal Group-III nitrideGroup-III nitride wafer with cubic Group-III nitride structures
  The wafer of claim 10, wherein at least sidewall portions of the hexagonal Group-III nitride of the multiple Group-III nitride-based structures are wet-etched, and wherein the sidewall portions of the hexagonal Group-III nitride of each Group III nitride-based structure is curved from being wet-etched.
3. 14
  Dependent← claim 10buried substrate (silicon, oxide, dielectric, or combination)Group-III nitride wafer with cubic Group-III nitride structures
  The wafer of claim 10, wherein the buried substrate is one of silicon, an oxide, a dielectric, or a combination thereof.
4. 15
  Dependent← claim 10Group-III nitride wafer with cubic Group-III nitride structures
  The wafer of claim 10, wherein the steeply angled sidewalls of the multiple Group-III nitride-based structures extend more than twice a height of the U-shaped grooves above the layer of silicon (100).
5. 16
  Dependent← claim 10cubic Group-III nitrideGroup-III nitride wafer with cubic Group-III nitride structures
  The wafer of claim 10, wherein a facet density of the cubic Group-III nitride is between approximately 3-4×104 per centimeter. ∗ ∗ ∗ ∗ ∗

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN wafer with c-GaN structures (no wet etch)

c-GaNcubic GaN upper layer

h-GaNhexagonal GaN growth fronts

buffer layerbuffer

Sisilicon layer with U grooves

buried substrateburied substrate

GaN wafer with c-GaN structures (wet-etched h-GaN sidewalls)

Materials

Materials described outside the worked examples.

silicon (100)

Substrate Layer

cubic gallium nitride

c-GaN

Cubic Phase Epitaxial Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Oxide Deposition And Patterning

Step 1

Process details

method:dry oxidation or CMOS-compatible dielectric deposition

purpose:form patterned oxide defining U-shaped groove locations

Materials:SiO₂Si

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

sem

SEM

FIG. 7B is a scanning electron microscope (SEM) image of a top view of multiple parallel-oriented U-shaped grooves such as the U-shaped groove of

Figure references

FIG. 7

sem

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
facet density of c-GaN	30000–40000 per centimeter	c-GaN
bandgap energy of c-GaN	3.2 eV

Cited prior art

Patents and literature cited by this patent (applicant and examiner references).

Cited patents · 5

US 7,879,147 B27,879,147 B2 2/2011 Xu
US 8,823,142 B28,823,142 B2 9/2014 Fujiwara
JP 4741506 B2JP 4741506 B2 7/2007
US 10,027,086 B210,027,086 B2 7/2018 Bayram
US 2017/0310076 A12017/0310076 A1 * 10/2017 Bayram............ H01L 21/02433examiner

Cited non-patent literature · 25

Why these are connected

Related documents with shared materials, methods, properties, or citations.

LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON | Matter42 Literature

Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy. Bayram et al., “Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy”, Advanced Functional Materials, vol. 24, pp. 4492-4496, 2014.
Critical thickness of B-InN/GaN/Mgo structures. Caro et al., “Critical thickness of B-InN/GaN/Mgo structures”, Journal of Applied Physics, vol. 107, 6 pages, 2010.
Auger recombination rates in nitrides from ﬁrst principles. Delaney et al., “Auger recombination rates in nitrides from ﬁrst principles”, Applied Physics Letters, vol. 94, No. 19, 4 pages, May 2009.
Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation. Grady et al., “Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation”, Journal of Applied Physics, vol. 50, 8 pages, 2017.
Vertical design of cubic GaN-based high electron mobility transistors. Granzner et al., “Vertical design of cubic GaN-based high electron mobility transistors”, Journal of Applied Physics, vol. 110, 8 pages, 2011.
Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers. Gundimeda et al., “Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers”, Journal of Applied Physics, vol. 131, 8 pages, 2022.
Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms. Han et al., “Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms”, Optica, vol. 7, No. 2, p. 148-153, Feb. 2020.
Study of the heavily p-type doping of cubic GaN with Mg. Hernandez-Gutierrez et al., “Study of the heavily p-type doping of cubic GaN with Mg”, Scientiﬁc Reports, No. 10, 7 pages, 2020.
Normally-off GaN Transistors for Power Applications. Hilt et al., “Normally-off GaN Transistors for Power Applications”, Journal of Physics: Conference Series, vol. 494, 7 pages, 2014.
Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers. Komiyama et al., “Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers”, Applied Physics Letters, vol. 88, 4 pages, Mar. 2006.
Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?. Krustok et al., “Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?”, Journal of Applied Physics, vol. 81, 5 pages, 1997. Kuzmik, Jan, “Power Electronics on InA1N/(In)GaN: Prospect for a Record Performance”, IEEE Electron Device Letters, vol. 22, No. 11, p. 510-512, Nov. 2001.
Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. Lee et al., “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition”, Applied Physics Letters, vol. 107, 6 pages, 2015.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. Lee et al., “Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM”, Journal of Applied Physics, vol. 125, 9 pages, 2019.
Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100). Liu et al., “Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)”, Journal of Applied Physics, vol. 120, 7 pages, 2016.
High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). Liu et al., “High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)”, ACS Photonics, vol. 5, pp. 955-963, 2018.
Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100). Liu et al., “Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100)”, Applied Physics Letters, vol. 109, 5 pages, 2016.
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range. Machhandani et al., “Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range”, American Physical Society, Physical Review B, No. 83, 5 pages, 2011.
GaN HBT: Toward an RF Device. McCarthy et al., “GaN HBT: Toward an RF Device”, IEEE Trans- actions on Electron Devices, vol. 48, No. 3, p. 543-551, Mar. 2001. Nakamura, et al., “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”, Applied Physics Letters, vol. 64, No. 13, p. 1687-1689, Mar. 28, 1994.
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots. Simon et al., “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots”, American Physical
Society, Physical Review B, No. 68, 7 pages, 2003.
Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory. Tsai et al., “Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory”, ACS Omega, No. 5, pp. 3917-3923, 2020.
Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes. Tsai et al., “Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes”, Journal of Applied Physics, vol. 131, 7 pages, 2022.
Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes. Tsai et al., “Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes”, IEEE Transactions on Electron Devices, vol. 69, No. 6, pp. 3240-3245, Jun. 6, 2022.
Band parameters for nitrogen-containing semi- conductors. Vurgaftman et al., “Band parameters for nitrogen-containing semi- conductors”, Journal of Applied Physics, vol. 94, No. 6, p. 3675- 3696, Sep. 15, 2003. Wu, et al., “Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy”,Applied Physics Letters, vol. 71, No. 15, p. 2067-2069, Oct. 13, 1997.
Growth of cubic GaN on Si(001) by plasma-assisted MBE. Yang et al., “Growth of cubic GaN on Si(001) by plasma-assisted MBE”, Applied surface Science, vol. 123-124, pp. 1-6, 1998.

Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy. Bayram et al., “Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy”, Advanced Functional Materials, vol. 24, pp. 4492-4496, 2014.
Critical thickness of B-InN/GaN/Mgo structures. Caro et al., “Critical thickness of B-InN/GaN/Mgo structures”, Journal of Applied Physics, vol. 107, 6 pages, 2010.
Auger recombination rates in nitrides from ﬁrst principles. Delaney et al., “Auger recombination rates in nitrides from ﬁrst principles”, Applied Physics Letters, vol. 94, No. 19, 4 pages, May 2009.
Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation. Grady et al., “Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation”, Journal of Applied Physics, vol. 50, 8 pages, 2017.
Vertical design of cubic GaN-based high electron mobility transistors. Granzner et al., “Vertical design of cubic GaN-based high electron mobility transistors”, Journal of Applied Physics, vol. 110, 8 pages, 2011.
Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers. Gundimeda et al., “Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers”, Journal of Applied Physics, vol. 131, 8 pages, 2022.
Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms. Han et al., “Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms”, Optica, vol. 7, No. 2, p. 148-153, Feb. 2020.
Study of the heavily p-type doping of cubic GaN with Mg. Hernandez-Gutierrez et al., “Study of the heavily p-type doping of cubic GaN with Mg”, Scientiﬁc Reports, No. 10, 7 pages, 2020.
Normally-off GaN Transistors for Power Applications. Hilt et al., “Normally-off GaN Transistors for Power Applications”, Journal of Physics: Conference Series, vol. 494, 7 pages, 2014.
Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers. Komiyama et al., “Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers”, Applied Physics Letters, vol. 88, 4 pages, Mar. 2006.
Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?. Krustok et al., “Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?”, Journal of Applied Physics, vol. 81, 5 pages, 1997. Kuzmik, Jan, “Power Electronics on InA1N/(In)GaN: Prospect for a Record Performance”, IEEE Electron Device Letters, vol. 22, No. 11, p. 510-512, Nov. 2001.
Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. Lee et al., “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition”, Applied Physics Letters, vol. 107, 6 pages, 2015.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. Lee et al., “Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM”, Journal of Applied Physics, vol. 125, 9 pages, 2019.
Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100). Liu et al., “Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)”, Journal of Applied Physics, vol. 120, 7 pages, 2016.
High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). Liu et al., “High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)”, ACS Photonics, vol. 5, pp. 955-963, 2018.
Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100). Liu et al., “Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100)”, Applied Physics Letters, vol. 109, 5 pages, 2016.
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range. Machhandani et al., “Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range”, American Physical Society, Physical Review B, No. 83, 5 pages, 2011.
GaN HBT: Toward an RF Device. McCarthy et al., “GaN HBT: Toward an RF Device”, IEEE Trans- actions on Electron Devices, vol. 48, No. 3, p. 543-551, Mar. 2001. Nakamura, et al., “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”, Applied Physics Letters, vol. 64, No. 13, p. 1687-1689, Mar. 28, 1994.
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots. Simon et al., “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots”, American Physical
Society, Physical Review B, No. 68, 7 pages, 2003.
Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory. Tsai et al., “Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory”, ACS Omega, No. 5, pp. 3917-3923, 2020.
Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes. Tsai et al., “Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes”, Journal of Applied Physics, vol. 131, 7 pages, 2022.
Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes. Tsai et al., “Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes”, IEEE Transactions on Electron Devices, vol. 69, No. 6, pp. 3240-3245, Jun. 6, 2022.
Band parameters for nitrogen-containing semi- conductors. Vurgaftman et al., “Band parameters for nitrogen-containing semi- conductors”, Journal of Applied Physics, vol. 94, No. 6, p. 3675- 3696, Sep. 15, 2003. Wu, et al., “Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy”,Applied Physics Letters, vol. 71, No. 15, p. 2067-2069, Oct. 13, 1997.
Growth of cubic GaN on Si(001) by plasma-assisted MBE. Yang et al., “Growth of cubic GaN on Si(001) by plasma-assisted MBE”, Applied surface Science, vol. 123-124, pp. 1-6, 1998.

Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy. Bayram et al., “Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy”, Advanced Functional Materials, vol. 24, pp. 4492-4496, 2014.
Critical thickness of B-InN/GaN/Mgo structures. Caro et al., “Critical thickness of B-InN/GaN/Mgo structures”, Journal of Applied Physics, vol. 107, 6 pages, 2010.
Auger recombination rates in nitrides from ﬁrst principles. Delaney et al., “Auger recombination rates in nitrides from ﬁrst principles”, Applied Physics Letters, vol. 94, No. 19, 4 pages, May 2009.
Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation. Grady et al., “Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation”, Journal of Applied Physics, vol. 50, 8 pages, 2017.
Vertical design of cubic GaN-based high electron mobility transistors. Granzner et al., “Vertical design of cubic GaN-based high electron mobility transistors”, Journal of Applied Physics, vol. 110, 8 pages, 2011.
Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers. Gundimeda et al., “Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers”, Journal of Applied Physics, vol. 131, 8 pages, 2022.
Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms. Han et al., “Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms”, Optica, vol. 7, No. 2, p. 148-153, Feb. 2020.
Study of the heavily p-type doping of cubic GaN with Mg. Hernandez-Gutierrez et al., “Study of the heavily p-type doping of cubic GaN with Mg”, Scientiﬁc Reports, No. 10, 7 pages, 2020.
Normally-off GaN Transistors for Power Applications. Hilt et al., “Normally-off GaN Transistors for Power Applications”, Journal of Physics: Conference Series, vol. 494, 7 pages, 2014.
Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers. Komiyama et al., “Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers”, Applied Physics Letters, vol. 88, 4 pages, Mar. 2006.
Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?. Krustok et al., “Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?”, Journal of Applied Physics, vol. 81, 5 pages, 1997. Kuzmik, Jan, “Power Electronics on InA1N/(In)GaN: Prospect for a Record Performance”, IEEE Electron Device Letters, vol. 22, No. 11, p. 510-512, Nov. 2001.
Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. Lee et al., “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition”, Applied Physics Letters, vol. 107, 6 pages, 2015.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. Lee et al., “Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM”, Journal of Applied Physics, vol. 125, 9 pages, 2019.
Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100). Liu et al., “Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)”, Journal of Applied Physics, vol. 120, 7 pages, 2016.
High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). Liu et al., “High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)”, ACS Photonics, vol. 5, pp. 955-963, 2018.
Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100). Liu et al., “Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100)”, Applied Physics Letters, vol. 109, 5 pages, 2016.
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range. Machhandani et al., “Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range”, American Physical Society, Physical Review B, No. 83, 5 pages, 2011.
GaN HBT: Toward an RF Device. McCarthy et al., “GaN HBT: Toward an RF Device”, IEEE Trans- actions on Electron Devices, vol. 48, No. 3, p. 543-551, Mar. 2001. Nakamura, et al., “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”, Applied Physics Letters, vol. 64, No. 13, p. 1687-1689, Mar. 28, 1994.
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots. Simon et al., “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots”, American Physical
Society, Physical Review B, No. 68, 7 pages, 2003.
Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory. Tsai et al., “Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory”, ACS Omega, No. 5, pp. 3917-3923, 2020.
Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes. Tsai et al., “Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes”, Journal of Applied Physics, vol. 131, 7 pages, 2022.
Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes. Tsai et al., “Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes”, IEEE Transactions on Electron Devices, vol. 69, No. 6, pp. 3240-3245, Jun. 6, 2022.
Band parameters for nitrogen-containing semi- conductors. Vurgaftman et al., “Band parameters for nitrogen-containing semi- conductors”, Journal of Applied Physics, vol. 94, No. 6, p. 3675- 3696, Sep. 15, 2003. Wu, et al., “Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy”,Applied Physics Letters, vol. 71, No. 15, p. 2067-2069, Oct. 13, 1997.
Growth of cubic GaN on Si(001) by plasma-assisted MBE. Yang et al., “Growth of cubic GaN on Si(001) by plasma-assisted MBE”, Applied surface Science, vol. 123-124, pp. 1-6, 1998.

Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy. Bayram et al., “Cubic Phase GaN Nano-grooved Si(100) via Mask- less Selective Area Epitaxy”, Advanced Functional Materials, vol. 24, pp. 4492-4496, 2014.
Critical thickness of B-InN/GaN/Mgo structures. Caro et al., “Critical thickness of B-InN/GaN/Mgo structures”, Journal of Applied Physics, vol. 107, 6 pages, 2010.
Auger recombination rates in nitrides from ﬁrst principles. Delaney et al., “Auger recombination rates in nitrides from ﬁrst principles”, Applied Physics Letters, vol. 94, No. 19, 4 pages, May 2009.
Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation. Grady et al., “Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation”, Journal of Applied Physics, vol. 50, 8 pages, 2017.
Vertical design of cubic GaN-based high electron mobility transistors. Granzner et al., “Vertical design of cubic GaN-based high electron mobility transistors”, Journal of Applied Physics, vol. 110, 8 pages, 2011.
Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers. Gundimeda et al., “Investigation of wurtzite formation in MOVPE- grown zincblende GaN epilayers on AlxGa1-xN nucleation layers”, Journal of Applied Physics, vol. 131, 8 pages, 2022.
Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms. Han et al., “Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms”, Optica, vol. 7, No. 2, p. 148-153, Feb. 2020.
Study of the heavily p-type doping of cubic GaN with Mg. Hernandez-Gutierrez et al., “Study of the heavily p-type doping of cubic GaN with Mg”, Scientiﬁc Reports, No. 10, 7 pages, 2020.
Normally-off GaN Transistors for Power Applications. Hilt et al., “Normally-off GaN Transistors for Power Applications”, Journal of Physics: Conference Series, vol. 494, 7 pages, 2014.
Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers. Komiyama et al., “Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers”, Applied Physics Letters, vol. 88, 4 pages, Mar. 2006.
Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?. Krustok et al., “Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?”, Journal of Applied Physics, vol. 81, 5 pages, 1997. Kuzmik, Jan, “Power Electronics on InA1N/(In)GaN: Prospect for a Record Performance”, IEEE Electron Device Letters, vol. 22, No. 11, p. 510-512, Nov. 2001.
Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. Lee et al., “Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition”, Applied Physics Letters, vol. 107, 6 pages, 2015.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. Lee et al., “Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM”, Journal of Applied Physics, vol. 125, 9 pages, 2019.
Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100). Liu et al., “Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)”, Journal of Applied Physics, vol. 120, 7 pages, 2016.
High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). Liu et al., “High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)”, ACS Photonics, vol. 5, pp. 955-963, 2018.
Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100). Liu et al., “Maximizing cubic phase gallium nitride surface cover- age on nano-patterned silicon (100)”, Applied Physics Letters, vol. 109, 5 pages, 2016.
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range. Machhandani et al., “Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range”, American Physical Society, Physical Review B, No. 83, 5 pages, 2011.
GaN HBT: Toward an RF Device. McCarthy et al., “GaN HBT: Toward an RF Device”, IEEE Trans- actions on Electron Devices, vol. 48, No. 3, p. 543-551, Mar. 2001. Nakamura, et al., “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”, Applied Physics Letters, vol. 64, No. 13, p. 1687-1689, Mar. 28, 1994.
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots. Simon et al., “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots”, American Physical
Society, Physical Review B, No. 68, 7 pages, 2003.
Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory. Tsai et al., “Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory”, ACS Omega, No. 5, pp. 3917-3923, 2020.
Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes. Tsai et al., “Interplay betweenAuger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes”, Journal of Applied Physics, vol. 131, 7 pages, 2022.
Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes. Tsai et al., “Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light Emitting Diodes”, IEEE Transactions on Electron Devices, vol. 69, No. 6, pp. 3240-3245, Jun. 6, 2022.
Band parameters for nitrogen-containing semi- conductors. Vurgaftman et al., “Band parameters for nitrogen-containing semi- conductors”, Journal of Applied Physics, vol. 94, No. 6, p. 3675- 3696, Sep. 15, 2003. Wu, et al., “Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy”,Applied Physics Letters, vol. 71, No. 15, p. 2067-2069, Oct. 13, 1997.
Growth of cubic GaN on Si(001) by plasma-assisted MBE. Yang et al., “Growth of cubic GaN on Si(001) by plasma-assisted MBE”, Applied surface Science, vol. 123-124, pp. 1-6, 1998.