Patent
US 10,319,829METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE BASED DEVICES
David P. Bour, Thomas R. Prunty, Hui Nie, Madhan M. Raj
Nexgen Power Systems, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,319,829Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, an isotropic etch undercutting the portions of the masking layer remaining after the ex-situ etch of this layer is illustrated. However, embodiments …
FIG. 2 can be deposited in-situ in the growth reactor along with the epitaxial layers or can be deposited or otherwise formed ex-situ. An example of a mask …
FIG. 3 is a simplified process flow diagram illustrating another regrowth alternative to the process flow illustrated in
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
FIG. 5 is a simplified flowchart illustrating a method of regrowing material according to an embodiment of the present invention. The method 500 includes …
FIG. 6 is a simplified flowchart illustrating a method of fabricating an MPS diode according to an embodiment of the present invention. The method 600 includes …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an electronic device according to an embodiment of the present invention. The method 700 …
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of regrowing material, the method comprising: providing a I II -nitride structure including a substrate, a first epitaxial layer coupled to the substrate, a second epitaxial layer coupled to the first epitaxial layer, and an epitaxially grown masking layer comprising A l N coupled to the second epitaxial layer; patterning the epitaxially grown masking layer to form an etch mask; placing the I II -nitride structure in a growth chamber; removing, using an in-situ etch in the growth chamber, a portion of the I II -nitride structure to expose a regrowth region; and regrowing, in the growth chamber, a regrown I II -nitride material in the regrowth region and over at least a portion of the etch mask. Previously presented
The method of claim 1 wherein: the substrate is characterized by a first conductivity type; the first epitaxial layer is characterized by the first conductivity type; and the second epitaxial layer is characterized by a second conductivity type opposite to the first conductivity type. Currently amended
The method of claim 1 wherein the epitaxially grown masking layer comprising A l N is characterized by a thickness less than 4 nm. Previously presented
, The method of claim 1, further comprising:,,,,, removing the regrown I II -nitride material from the growth chamber; removing a portion of the regrown I II -nitride material to expose the second epitaxial layer; forming a Schottky contact to the regrown I II -nitride material; forming an ohmic contact to portions of the second epitaxial layer; and forming a second ohmic contact to the substrate. Currently amended
The method of claim 1 wherein the regrowth region extends through the second epitaxial layer to the first epitaxial layer. Currently amended
The method of claim 1 wherein the growth chamber comprises an MOCVD reactor. Currently amended
The method of claim 1 wherein the first epitaxial layer comprises an n-type I II -nitride material. Currently amended
The method of claim 1 wherein the second epitaxial layer comprises a I II -nitride material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride structure with epitaxially grown AlN masking layer
Merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
III-nitride (substrate/epitaxial)
AlN
III-nitride
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN masking layer thickness | ≤ 4 nm | AlN |
n+ GaN substrate dopant concentration range | 100000000000000000–10000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,319,829Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, an isotropic etch undercutting the portions of the masking layer remaining after the ex-situ etch of this layer is illustrated. However, embodiments …
FIG. 2 can be deposited in-situ in the growth reactor along with the epitaxial layers or can be deposited or otherwise formed ex-situ. An example of a mask …
FIG. 3 is a simplified process flow diagram illustrating another regrowth alternative to the process flow illustrated in
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
FIG. 5 is a simplified flowchart illustrating a method of regrowing material according to an embodiment of the present invention. The method 500 includes …
FIG. 6 is a simplified flowchart illustrating a method of fabricating an MPS diode according to an embodiment of the present invention. The method 600 includes …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an electronic device according to an embodiment of the present invention. The method 700 …
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of regrowing material, the method comprising: providing a I II -nitride structure including a substrate, a first epitaxial layer coupled to the substrate, a second epitaxial layer coupled to the first epitaxial layer, and an epitaxially grown masking layer comprising A l N coupled to the second epitaxial layer; patterning the epitaxially grown masking layer to form an etch mask; placing the I II -nitride structure in a growth chamber; removing, using an in-situ etch in the growth chamber, a portion of the I II -nitride structure to expose a regrowth region; and regrowing, in the growth chamber, a regrown I II -nitride material in the regrowth region and over at least a portion of the etch mask. Previously presented
The method of claim 1 wherein: the substrate is characterized by a first conductivity type; the first epitaxial layer is characterized by the first conductivity type; and the second epitaxial layer is characterized by a second conductivity type opposite to the first conductivity type. Currently amended
The method of claim 1 wherein the epitaxially grown masking layer comprising A l N is characterized by a thickness less than 4 nm. Previously presented
, The method of claim 1, further comprising:,,,,, removing the regrown I II -nitride material from the growth chamber; removing a portion of the regrown I II -nitride material to expose the second epitaxial layer; forming a Schottky contact to the regrown I II -nitride material; forming an ohmic contact to portions of the second epitaxial layer; and forming a second ohmic contact to the substrate. Currently amended
The method of claim 1 wherein the regrowth region extends through the second epitaxial layer to the first epitaxial layer. Currently amended
The method of claim 1 wherein the growth chamber comprises an MOCVD reactor. Currently amended
The method of claim 1 wherein the first epitaxial layer comprises an n-type I II -nitride material. Currently amended
The method of claim 1 wherein the second epitaxial layer comprises a I II -nitride material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride structure with epitaxially grown AlN masking layer
Merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
III-nitride (substrate/epitaxial)
AlN
III-nitride
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN masking layer thickness | ≤ 4 nm | AlN |
n+ GaN substrate dopant concentration range | 100000000000000000–10000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,319,829Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, an isotropic etch undercutting the portions of the masking layer remaining after the ex-situ etch of this layer is illustrated. However, embodiments …
FIG. 2 can be deposited in-situ in the growth reactor along with the epitaxial layers or can be deposited or otherwise formed ex-situ. An example of a mask …
FIG. 3 is a simplified process flow diagram illustrating another regrowth alternative to the process flow illustrated in
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
FIG. 5 is a simplified flowchart illustrating a method of regrowing material according to an embodiment of the present invention. The method 500 includes …
FIG. 6 is a simplified flowchart illustrating a method of fabricating an MPS diode according to an embodiment of the present invention. The method 600 includes …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an electronic device according to an embodiment of the present invention. The method 700 …
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of regrowing material, the method comprising: providing a I II -nitride structure including a substrate, a first epitaxial layer coupled to the substrate, a second epitaxial layer coupled to the first epitaxial layer, and an epitaxially grown masking layer comprising A l N coupled to the second epitaxial layer; patterning the epitaxially grown masking layer to form an etch mask; placing the I II -nitride structure in a growth chamber; removing, using an in-situ etch in the growth chamber, a portion of the I II -nitride structure to expose a regrowth region; and regrowing, in the growth chamber, a regrown I II -nitride material in the regrowth region and over at least a portion of the etch mask. Previously presented
The method of claim 1 wherein: the substrate is characterized by a first conductivity type; the first epitaxial layer is characterized by the first conductivity type; and the second epitaxial layer is characterized by a second conductivity type opposite to the first conductivity type. Currently amended
The method of claim 1 wherein the epitaxially grown masking layer comprising A l N is characterized by a thickness less than 4 nm. Previously presented
, The method of claim 1, further comprising:,,,,, removing the regrown I II -nitride material from the growth chamber; removing a portion of the regrown I II -nitride material to expose the second epitaxial layer; forming a Schottky contact to the regrown I II -nitride material; forming an ohmic contact to portions of the second epitaxial layer; and forming a second ohmic contact to the substrate. Currently amended
The method of claim 1 wherein the regrowth region extends through the second epitaxial layer to the first epitaxial layer. Currently amended
The method of claim 1 wherein the growth chamber comprises an MOCVD reactor. Currently amended
The method of claim 1 wherein the first epitaxial layer comprises an n-type I II -nitride material. Currently amended
The method of claim 1 wherein the second epitaxial layer comprises a I II -nitride material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride structure with epitaxially grown AlN masking layer
Merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
III-nitride (substrate/epitaxial)
AlN
III-nitride
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN masking layer thickness | ≤ 4 nm | AlN |
n+ GaN substrate dopant concentration range | 100000000000000000–10000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,319,829Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, an isotropic etch undercutting the portions of the masking layer remaining after the ex-situ etch of this layer is illustrated. However, embodiments …
FIG. 2 can be deposited in-situ in the growth reactor along with the epitaxial layers or can be deposited or otherwise formed ex-situ. An example of a mask …
FIG. 3 is a simplified process flow diagram illustrating another regrowth alternative to the process flow illustrated in
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
FIG. 5 is a simplified flowchart illustrating a method of regrowing material according to an embodiment of the present invention. The method 500 includes …
FIG. 6 is a simplified flowchart illustrating a method of fabricating an MPS diode according to an embodiment of the present invention. The method 600 includes …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an electronic device according to an embodiment of the present invention. The method 700 …
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of regrowing material, the method comprising: providing a I II -nitride structure including a substrate, a first epitaxial layer coupled to the substrate, a second epitaxial layer coupled to the first epitaxial layer, and an epitaxially grown masking layer comprising A l N coupled to the second epitaxial layer; patterning the epitaxially grown masking layer to form an etch mask; placing the I II -nitride structure in a growth chamber; removing, using an in-situ etch in the growth chamber, a portion of the I II -nitride structure to expose a regrowth region; and regrowing, in the growth chamber, a regrown I II -nitride material in the regrowth region and over at least a portion of the etch mask. Previously presented
The method of claim 1 wherein: the substrate is characterized by a first conductivity type; the first epitaxial layer is characterized by the first conductivity type; and the second epitaxial layer is characterized by a second conductivity type opposite to the first conductivity type. Currently amended
The method of claim 1 wherein the epitaxially grown masking layer comprising A l N is characterized by a thickness less than 4 nm. Previously presented
, The method of claim 1, further comprising:,,,,, removing the regrown I II -nitride material from the growth chamber; removing a portion of the regrown I II -nitride material to expose the second epitaxial layer; forming a Schottky contact to the regrown I II -nitride material; forming an ohmic contact to portions of the second epitaxial layer; and forming a second ohmic contact to the substrate. Currently amended
The method of claim 1 wherein the regrowth region extends through the second epitaxial layer to the first epitaxial layer. Currently amended
The method of claim 1 wherein the growth chamber comprises an MOCVD reactor. Currently amended
The method of claim 1 wherein the first epitaxial layer comprises an n-type I II -nitride material. Currently amended
The method of claim 1 wherein the second epitaxial layer comprises a I II -nitride material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride structure with epitaxially grown AlN masking layer
Merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
III-nitride (substrate/epitaxial)
AlN
III-nitride
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D, e.g., using MOCVD, to regrow III- nitride material 430 in the regrowth regions and above the patterned mask. In the illustrated embodiment, the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN masking layer thickness | ≤ 4 nm | AlN |
n+ GaN substrate dopant concentration range | 100000000000000000–10000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Vertical Junction Field Effect Transistor (VJFET)
No layer stack recorded.
n-doped III-nitride
n-doped GaN
GaN
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Thickness | 1–6 nm | — |
Thickness | 3–4 nm | — |
Thickness | 200–365 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 4 nm | — |
Vertical Junction Field Effect Transistor (VJFET)
No layer stack recorded.
n-doped III-nitride
n-doped GaN
GaN
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Thickness | 1–6 nm | — |
Thickness | 3–4 nm | — |
Thickness | 200–365 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 4 nm | — |
Vertical Junction Field Effect Transistor (VJFET)
No layer stack recorded.
n-doped III-nitride
n-doped GaN
GaN
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Thickness | 1–6 nm | — |
Thickness | 3–4 nm | — |
Thickness | 200–365 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 4 nm | — |
Vertical Junction Field Effect Transistor (VJFET)
No layer stack recorded.
n-doped III-nitride
n-doped GaN
GaN
FIG. 8 provide a particular method of fabricating a V J FET according to an embodiment of the present invention. Other sequences of steps may also be performed …
Thickness | 1–6 nm | — |
Thickness | 3–4 nm | — |
Thickness | 200–365 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Voltage | ≥ 1 V | — |
Thickness | ≥ 4 nm | — |