Patent
US 10,029,972water
H₂O
indium (In)
In
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c (formula III)
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c
X₁-(OH)a(O₂CCH₃)3-a (formula IV)
X₁-(OH)a(O₂CCH₃)3-a
long-chain carboxylic acid HO₂C(CH₂)bCH₃ (formula V)
HO₂C(CH₂)bCH₃
Group V precursor
tris(trimethylsilyl)phosphine
P(Si(CH₃)3)3
indium acetate
In(OOCCH₃)3
In(OOCCH₃)2OH
Group III-V semiconductor nanostructures
Figure 2 is a FTIR spectrum of lots of indium acetate from two different commercial suppliers. After washing the lot from the first supplier with methanol and hexanes, several bands disappeared in the spectrum and 30% of the mass was lost.
Figure 3 is a graph of the mass of indium acetate lots as temperature increases. After washing the lot from the first supplier with methanol and hexanes, the sample shows a mass consistent with I n(OOCCH 3) 2 0H.
Figure 4 is a FTIR of an incomplete reaction product of CH₃ COO H with I n(OH) 3
Figure 5 is a FTIR spectrum monitoring carboxylate exchange. The two arrows on the spectrum indicate that two characteristic bands disappear over the course of ligand exchange.
Figure 6 is a FTIR spectrum of purified I n(OOCCH 3) 2 0H reacted with lauric acid with nitrogen sparging. Treatment of I n(OOCCH 3) 2 0H with lauric acid produces a strong band at 1625 cm⁻¹ with the disappearance of the band at 1730 cm⁻¹.
Figure 7 is a FTIR spectrum of commercial indium acetate starting material before hydrolysis which shows a 5-band pattern and after hydrolysis which shows a 2-band pattern consistent with I n(OOCCH 3) 2 0H.
Figure 8 is a FTIR spectrum of a 35 g sample of commercial indium acetate material after hydrolysis in diethyl ether. The hydrolyzed material shows a 2-band pattern; however, after vacuum drying at 20 ° C overnight, a broad band at 2800 cm⁻¹ still remains.
Figure 9 is a FTIR spectrum of a 35 g sample of commercial indium acetate after hydrolysis in diethyl ether. After vacuum drying at 40 ° C overnight, a sharp O -H stretch is present and there is no broad band at 2800 cm⁻¹
Figure 10 is an overlay of three UV-Vis spectra of I nP nanoparticles prepared from three lots of commercial indium acetate that had been subject to hydrolysis to produce I n(OOCCH 3) 2 0H prior to reaction with 2.6 equivalents of lauric acid and tris(trimethylsilyl) phosphine. Atty. Dkt. No. …
Figure 11 are superimposed FTIR spectra of In (OOC(CH 2) 1 0CH 3) 2 0H produced using (a) 3.15 equivalent of lauric acid and (b) 2.15 equivalents of lauric acid. The FTIR spectra of (c) the I n(OOCCH 3) 2 0H starting material and (d) lauric acid are also shown. As shown in (a), the product of the …
Figure 12 is an electronic absorption spectrum of a green InP core with the maximum absorbance (2Am a) and half-width at half maximum (HWHM) indicated. DEF INITI ONS [0050] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of …
| 55.5 % |
In(OOCCH₃)2OH |
Duration | 5–10 minutes | — |
Thickness | 1200–1800 cm | — |
Pressure | 75–100 mtorr | — |
Pressure | ≤ 150 mtorr | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 3300 cm | — |
Temperature | 250–450 °C | — |
Temperature | 250–420 °C | — |
Temperature | 250–400 °C | — |
Temperature | 250–350 °C | — |
Temperature | 250–300 °C | — |
Temperature | 300–450 °C | — |
Temperature | 300–420 °C | — |
Temperature | 300–400 °C | — |
Temperature | 300–350 °C | — |
Temperature | 350–450 °C | — |
Temperature | 350–420 °C | — |
Temperature | 350–400 °C | — |
Temperature | 400–450 °C | — |
Temperature | 400–420 °C | — |
Temperature | 420–450 °C | — |
Temperature | 200–400 °C | — |
Temperature | 200–350 °C | — |
Temperature | 200–300 °C | — |
Temperature | 200–250 °C | — |
Temperature | 0–50 °C | — |
Temperature | 0–40 °C | — |
Temperature | 0–30 °C | — |
Temperature | 0–20 °C | — |
Temperature | 5–50 °C | — |
Temperature | 5–40 °C | — |
Temperature | 5–30 °C | — |
Temperature | 5–20 °C | — |
Temperature | 10–50 °C | — |
Temperature | 10–30 °C | — |
Temperature | 10–20 °C | — |
Temperature | 20–50 °C | — |
Temperature | 20–40 °C | — |
Temperature | 20–30 °C | — |
Duration | 600–36000 s | — |
Duration | 600–18000 s | — |
Duration | 600–10800 s | — |
Duration | 600–7200 s | — |
Duration | 600–3600 s | — |
Duration | 1200–36000 s | — |
Duration | 1200–18000 s | — |
Duration | 1200–10800 s | — |
Duration | 1200–7200 s | — |
Duration | 1200–3600 s | — |
Duration | 1800–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 1800–10800 s | — |
Duration | 1800–7200 s | — |
Duration | 1800–3600 s | — |
Duration | 2400–36000 s | — |
Duration | 2400–18000 s | — |
Duration | 2400–10800 s | — |
Duration | 2400–7200 s | — |
Duration | 2400–3600 s | — |
Duration | 1–10 hours | — |
Duration | 1–5 hours | — |
Duration | 1–3 hours | — |
Duration | 1–2 hours | — |
Temperature | 20–100 °C | — |
Temperature | 20–80 °C | — |
Temperature | 20–60 °C | — |
Temperature | 30–100 °C | — |
Duration | 600–72000 s | — |
Duration | 600–54000 s | — |
Duration | 1200–72000 s | — |
Duration | 1200–54000 s | — |
Duration | 1800–72000 s | — |
Duration | 1800–54000 s | — |
Duration | 2400–72000 s | — |
Duration | 2400–54000 s | — |
Duration | 1–20 hours | — |
Duration | 1–15 hours | — |
Temperature | 40–100 °C | — |
Temperature | 40–60 °C | — |
Temperature | 40–50 °C | — |
Temperature | 50–100 °C | — |
Temperature | 50–60 °C | — |
Temperature | 60–100 °C | — |
Temperature | 60–80 °C | — |
Temperature | 60–200 °C | — |
Temperature | 60–150 °C | — |
Temperature | 100–200 °C | — |
Temperature | 100–180 °C | — |
Temperature | 100–150 °C | — |
Temperature | 150–200 °C | — |
Temperature | 150–180 °C | — |
Temperature | 180–200 °C | — |
Temperature | 40–80 °C | — |
Temperature | 5–10 °C | — |
Temperature | 0–5 °C | — |
Temperature | 31–250 °C | — |
Thickness | ≥ 2800 cm | — |
Temperature | ≥ 200 °C | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 12 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 20 nm | — |
Temperature | 10–80 °C | — |
Temperature | 35–45 °C | — |
Temperature | 30–50 °C | — |
water
H₂O
indium (In)
In
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c (formula III)
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c
X₁-(OH)a(O₂CCH₃)3-a (formula IV)
X₁-(OH)a(O₂CCH₃)3-a
long-chain carboxylic acid HO₂C(CH₂)bCH₃ (formula V)
HO₂C(CH₂)bCH₃
Group V precursor
tris(trimethylsilyl)phosphine
P(Si(CH₃)3)3
indium acetate
In(OOCCH₃)3
In(OOCCH₃)2OH
Group III-V semiconductor nanostructures
Figure 2 is a FTIR spectrum of lots of indium acetate from two different commercial suppliers. After washing the lot from the first supplier with methanol and hexanes, several bands disappeared in the spectrum and 30% of the mass was lost.
Figure 3 is a graph of the mass of indium acetate lots as temperature increases. After washing the lot from the first supplier with methanol and hexanes, the sample shows a mass consistent with I n(OOCCH 3) 2 0H.
Figure 4 is a FTIR of an incomplete reaction product of CH₃ COO H with I n(OH) 3
Figure 5 is a FTIR spectrum monitoring carboxylate exchange. The two arrows on the spectrum indicate that two characteristic bands disappear over the course of ligand exchange.
Figure 6 is a FTIR spectrum of purified I n(OOCCH 3) 2 0H reacted with lauric acid with nitrogen sparging. Treatment of I n(OOCCH 3) 2 0H with lauric acid produces a strong band at 1625 cm⁻¹ with the disappearance of the band at 1730 cm⁻¹.
Figure 7 is a FTIR spectrum of commercial indium acetate starting material before hydrolysis which shows a 5-band pattern and after hydrolysis which shows a 2-band pattern consistent with I n(OOCCH 3) 2 0H.
Figure 8 is a FTIR spectrum of a 35 g sample of commercial indium acetate material after hydrolysis in diethyl ether. The hydrolyzed material shows a 2-band pattern; however, after vacuum drying at 20 ° C overnight, a broad band at 2800 cm⁻¹ still remains.
Figure 9 is a FTIR spectrum of a 35 g sample of commercial indium acetate after hydrolysis in diethyl ether. After vacuum drying at 40 ° C overnight, a sharp O -H stretch is present and there is no broad band at 2800 cm⁻¹
Figure 10 is an overlay of three UV-Vis spectra of I nP nanoparticles prepared from three lots of commercial indium acetate that had been subject to hydrolysis to produce I n(OOCCH 3) 2 0H prior to reaction with 2.6 equivalents of lauric acid and tris(trimethylsilyl) phosphine. Atty. Dkt. No. …
Figure 11 are superimposed FTIR spectra of In (OOC(CH 2) 1 0CH 3) 2 0H produced using (a) 3.15 equivalent of lauric acid and (b) 2.15 equivalents of lauric acid. The FTIR spectra of (c) the I n(OOCCH 3) 2 0H starting material and (d) lauric acid are also shown. As shown in (a), the product of the …
Figure 12 is an electronic absorption spectrum of a green InP core with the maximum absorbance (2Am a) and half-width at half maximum (HWHM) indicated. DEF INITI ONS [0050] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of …
| 55.5 % |
In(OOCCH₃)2OH |
Duration | 5–10 minutes | — |
Thickness | 1200–1800 cm | — |
Pressure | 75–100 mtorr | — |
Pressure | ≤ 150 mtorr | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 3300 cm | — |
Temperature | 250–450 °C | — |
Temperature | 250–420 °C | — |
Temperature | 250–400 °C | — |
Temperature | 250–350 °C | — |
Temperature | 250–300 °C | — |
Temperature | 300–450 °C | — |
Temperature | 300–420 °C | — |
Temperature | 300–400 °C | — |
Temperature | 300–350 °C | — |
Temperature | 350–450 °C | — |
Temperature | 350–420 °C | — |
Temperature | 350–400 °C | — |
Temperature | 400–450 °C | — |
Temperature | 400–420 °C | — |
Temperature | 420–450 °C | — |
Temperature | 200–400 °C | — |
Temperature | 200–350 °C | — |
Temperature | 200–300 °C | — |
Temperature | 200–250 °C | — |
Temperature | 0–50 °C | — |
Temperature | 0–40 °C | — |
Temperature | 0–30 °C | — |
Temperature | 0–20 °C | — |
Temperature | 5–50 °C | — |
Temperature | 5–40 °C | — |
Temperature | 5–30 °C | — |
Temperature | 5–20 °C | — |
Temperature | 10–50 °C | — |
Temperature | 10–30 °C | — |
Temperature | 10–20 °C | — |
Temperature | 20–50 °C | — |
Temperature | 20–40 °C | — |
Temperature | 20–30 °C | — |
Duration | 600–36000 s | — |
Duration | 600–18000 s | — |
Duration | 600–10800 s | — |
Duration | 600–7200 s | — |
Duration | 600–3600 s | — |
Duration | 1200–36000 s | — |
Duration | 1200–18000 s | — |
Duration | 1200–10800 s | — |
Duration | 1200–7200 s | — |
Duration | 1200–3600 s | — |
Duration | 1800–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 1800–10800 s | — |
Duration | 1800–7200 s | — |
Duration | 1800–3600 s | — |
Duration | 2400–36000 s | — |
Duration | 2400–18000 s | — |
Duration | 2400–10800 s | — |
Duration | 2400–7200 s | — |
Duration | 2400–3600 s | — |
Duration | 1–10 hours | — |
Duration | 1–5 hours | — |
Duration | 1–3 hours | — |
Duration | 1–2 hours | — |
Temperature | 20–100 °C | — |
Temperature | 20–80 °C | — |
Temperature | 20–60 °C | — |
Temperature | 30–100 °C | — |
Duration | 600–72000 s | — |
Duration | 600–54000 s | — |
Duration | 1200–72000 s | — |
Duration | 1200–54000 s | — |
Duration | 1800–72000 s | — |
Duration | 1800–54000 s | — |
Duration | 2400–72000 s | — |
Duration | 2400–54000 s | — |
Duration | 1–20 hours | — |
Duration | 1–15 hours | — |
Temperature | 40–100 °C | — |
Temperature | 40–60 °C | — |
Temperature | 40–50 °C | — |
Temperature | 50–100 °C | — |
Temperature | 50–60 °C | — |
Temperature | 60–100 °C | — |
Temperature | 60–80 °C | — |
Temperature | 60–200 °C | — |
Temperature | 60–150 °C | — |
Temperature | 100–200 °C | — |
Temperature | 100–180 °C | — |
Temperature | 100–150 °C | — |
Temperature | 150–200 °C | — |
Temperature | 150–180 °C | — |
Temperature | 180–200 °C | — |
Temperature | 40–80 °C | — |
Temperature | 5–10 °C | — |
Temperature | 0–5 °C | — |
Temperature | 31–250 °C | — |
Thickness | ≥ 2800 cm | — |
Temperature | ≥ 200 °C | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 12 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 20 nm | — |
Temperature | 10–80 °C | — |
Temperature | 35–45 °C | — |
Temperature | 30–50 °C | — |
water
H₂O
indium (In)
In
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c (formula III)
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c
X₁-(OH)a(O₂CCH₃)3-a (formula IV)
X₁-(OH)a(O₂CCH₃)3-a
long-chain carboxylic acid HO₂C(CH₂)bCH₃ (formula V)
HO₂C(CH₂)bCH₃
Group V precursor
tris(trimethylsilyl)phosphine
P(Si(CH₃)3)3
indium acetate
In(OOCCH₃)3
In(OOCCH₃)2OH
Group III-V semiconductor nanostructures
Figure 2 is a FTIR spectrum of lots of indium acetate from two different commercial suppliers. After washing the lot from the first supplier with methanol and hexanes, several bands disappeared in the spectrum and 30% of the mass was lost.
Figure 3 is a graph of the mass of indium acetate lots as temperature increases. After washing the lot from the first supplier with methanol and hexanes, the sample shows a mass consistent with I n(OOCCH 3) 2 0H.
Figure 4 is a FTIR of an incomplete reaction product of CH₃ COO H with I n(OH) 3
Figure 5 is a FTIR spectrum monitoring carboxylate exchange. The two arrows on the spectrum indicate that two characteristic bands disappear over the course of ligand exchange.
Figure 6 is a FTIR spectrum of purified I n(OOCCH 3) 2 0H reacted with lauric acid with nitrogen sparging. Treatment of I n(OOCCH 3) 2 0H with lauric acid produces a strong band at 1625 cm⁻¹ with the disappearance of the band at 1730 cm⁻¹.
Figure 7 is a FTIR spectrum of commercial indium acetate starting material before hydrolysis which shows a 5-band pattern and after hydrolysis which shows a 2-band pattern consistent with I n(OOCCH 3) 2 0H.
Figure 8 is a FTIR spectrum of a 35 g sample of commercial indium acetate material after hydrolysis in diethyl ether. The hydrolyzed material shows a 2-band pattern; however, after vacuum drying at 20 ° C overnight, a broad band at 2800 cm⁻¹ still remains.
Figure 9 is a FTIR spectrum of a 35 g sample of commercial indium acetate after hydrolysis in diethyl ether. After vacuum drying at 40 ° C overnight, a sharp O -H stretch is present and there is no broad band at 2800 cm⁻¹
Figure 10 is an overlay of three UV-Vis spectra of I nP nanoparticles prepared from three lots of commercial indium acetate that had been subject to hydrolysis to produce I n(OOCCH 3) 2 0H prior to reaction with 2.6 equivalents of lauric acid and tris(trimethylsilyl) phosphine. Atty. Dkt. No. …
Figure 11 are superimposed FTIR spectra of In (OOC(CH 2) 1 0CH 3) 2 0H produced using (a) 3.15 equivalent of lauric acid and (b) 2.15 equivalents of lauric acid. The FTIR spectra of (c) the I n(OOCCH 3) 2 0H starting material and (d) lauric acid are also shown. As shown in (a), the product of the …
Figure 12 is an electronic absorption spectrum of a green InP core with the maximum absorbance (2Am a) and half-width at half maximum (HWHM) indicated. DEF INITI ONS [0050] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of …
| 55.5 % |
In(OOCCH₃)2OH |
Duration | 5–10 minutes | — |
Thickness | 1200–1800 cm | — |
Pressure | 75–100 mtorr | — |
Pressure | ≤ 150 mtorr | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 3300 cm | — |
Temperature | 250–450 °C | — |
Temperature | 250–420 °C | — |
Temperature | 250–400 °C | — |
Temperature | 250–350 °C | — |
Temperature | 250–300 °C | — |
Temperature | 300–450 °C | — |
Temperature | 300–420 °C | — |
Temperature | 300–400 °C | — |
Temperature | 300–350 °C | — |
Temperature | 350–450 °C | — |
Temperature | 350–420 °C | — |
Temperature | 350–400 °C | — |
Temperature | 400–450 °C | — |
Temperature | 400–420 °C | — |
Temperature | 420–450 °C | — |
Temperature | 200–400 °C | — |
Temperature | 200–350 °C | — |
Temperature | 200–300 °C | — |
Temperature | 200–250 °C | — |
Temperature | 0–50 °C | — |
Temperature | 0–40 °C | — |
Temperature | 0–30 °C | — |
Temperature | 0–20 °C | — |
Temperature | 5–50 °C | — |
Temperature | 5–40 °C | — |
Temperature | 5–30 °C | — |
Temperature | 5–20 °C | — |
Temperature | 10–50 °C | — |
Temperature | 10–30 °C | — |
Temperature | 10–20 °C | — |
Temperature | 20–50 °C | — |
Temperature | 20–40 °C | — |
Temperature | 20–30 °C | — |
Duration | 600–36000 s | — |
Duration | 600–18000 s | — |
Duration | 600–10800 s | — |
Duration | 600–7200 s | — |
Duration | 600–3600 s | — |
Duration | 1200–36000 s | — |
Duration | 1200–18000 s | — |
Duration | 1200–10800 s | — |
Duration | 1200–7200 s | — |
Duration | 1200–3600 s | — |
Duration | 1800–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 1800–10800 s | — |
Duration | 1800–7200 s | — |
Duration | 1800–3600 s | — |
Duration | 2400–36000 s | — |
Duration | 2400–18000 s | — |
Duration | 2400–10800 s | — |
Duration | 2400–7200 s | — |
Duration | 2400–3600 s | — |
Duration | 1–10 hours | — |
Duration | 1–5 hours | — |
Duration | 1–3 hours | — |
Duration | 1–2 hours | — |
Temperature | 20–100 °C | — |
Temperature | 20–80 °C | — |
Temperature | 20–60 °C | — |
Temperature | 30–100 °C | — |
Duration | 600–72000 s | — |
Duration | 600–54000 s | — |
Duration | 1200–72000 s | — |
Duration | 1200–54000 s | — |
Duration | 1800–72000 s | — |
Duration | 1800–54000 s | — |
Duration | 2400–72000 s | — |
Duration | 2400–54000 s | — |
Duration | 1–20 hours | — |
Duration | 1–15 hours | — |
Temperature | 40–100 °C | — |
Temperature | 40–60 °C | — |
Temperature | 40–50 °C | — |
Temperature | 50–100 °C | — |
Temperature | 50–60 °C | — |
Temperature | 60–100 °C | — |
Temperature | 60–80 °C | — |
Temperature | 60–200 °C | — |
Temperature | 60–150 °C | — |
Temperature | 100–200 °C | — |
Temperature | 100–180 °C | — |
Temperature | 100–150 °C | — |
Temperature | 150–200 °C | — |
Temperature | 150–180 °C | — |
Temperature | 180–200 °C | — |
Temperature | 40–80 °C | — |
Temperature | 5–10 °C | — |
Temperature | 0–5 °C | — |
Temperature | 31–250 °C | — |
Thickness | ≥ 2800 cm | — |
Temperature | ≥ 200 °C | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 12 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 20 nm | — |
Temperature | 10–80 °C | — |
Temperature | 35–45 °C | — |
Temperature | 30–50 °C | — |
water
H₂O
indium (In)
In
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c (formula III)
X₁-(O₂C(CH₂)bCH₃)3-c(OH)c
X₁-(OH)a(O₂CCH₃)3-a (formula IV)
X₁-(OH)a(O₂CCH₃)3-a
long-chain carboxylic acid HO₂C(CH₂)bCH₃ (formula V)
HO₂C(CH₂)bCH₃
Group V precursor
tris(trimethylsilyl)phosphine
P(Si(CH₃)3)3
indium acetate
In(OOCCH₃)3
In(OOCCH₃)2OH
Group III-V semiconductor nanostructures
Figure 2 is a FTIR spectrum of lots of indium acetate from two different commercial suppliers. After washing the lot from the first supplier with methanol and hexanes, several bands disappeared in the spectrum and 30% of the mass was lost.
Figure 3 is a graph of the mass of indium acetate lots as temperature increases. After washing the lot from the first supplier with methanol and hexanes, the sample shows a mass consistent with I n(OOCCH 3) 2 0H.
Figure 4 is a FTIR of an incomplete reaction product of CH₃ COO H with I n(OH) 3
Figure 5 is a FTIR spectrum monitoring carboxylate exchange. The two arrows on the spectrum indicate that two characteristic bands disappear over the course of ligand exchange.
Figure 6 is a FTIR spectrum of purified I n(OOCCH 3) 2 0H reacted with lauric acid with nitrogen sparging. Treatment of I n(OOCCH 3) 2 0H with lauric acid produces a strong band at 1625 cm⁻¹ with the disappearance of the band at 1730 cm⁻¹.
Figure 7 is a FTIR spectrum of commercial indium acetate starting material before hydrolysis which shows a 5-band pattern and after hydrolysis which shows a 2-band pattern consistent with I n(OOCCH 3) 2 0H.
Figure 8 is a FTIR spectrum of a 35 g sample of commercial indium acetate material after hydrolysis in diethyl ether. The hydrolyzed material shows a 2-band pattern; however, after vacuum drying at 20 ° C overnight, a broad band at 2800 cm⁻¹ still remains.
Figure 9 is a FTIR spectrum of a 35 g sample of commercial indium acetate after hydrolysis in diethyl ether. After vacuum drying at 40 ° C overnight, a sharp O -H stretch is present and there is no broad band at 2800 cm⁻¹
Figure 10 is an overlay of three UV-Vis spectra of I nP nanoparticles prepared from three lots of commercial indium acetate that had been subject to hydrolysis to produce I n(OOCCH 3) 2 0H prior to reaction with 2.6 equivalents of lauric acid and tris(trimethylsilyl) phosphine. Atty. Dkt. No. …
Figure 11 are superimposed FTIR spectra of In (OOC(CH 2) 1 0CH 3) 2 0H produced using (a) 3.15 equivalent of lauric acid and (b) 2.15 equivalents of lauric acid. The FTIR spectra of (c) the I n(OOCCH 3) 2 0H starting material and (d) lauric acid are also shown. As shown in (a), the product of the …
Figure 12 is an electronic absorption spectrum of a green InP core with the maximum absorbance (2Am a) and half-width at half maximum (HWHM) indicated. DEF INITI ONS [0050] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of …
| 55.5 % |
In(OOCCH₃)2OH |
Duration | 5–10 minutes | — |
Thickness | 1200–1800 cm | — |
Pressure | 75–100 mtorr | — |
Pressure | ≤ 150 mtorr | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 3300 cm | — |
Temperature | 250–450 °C | — |
Temperature | 250–420 °C | — |
Temperature | 250–400 °C | — |
Temperature | 250–350 °C | — |
Temperature | 250–300 °C | — |
Temperature | 300–450 °C | — |
Temperature | 300–420 °C | — |
Temperature | 300–400 °C | — |
Temperature | 300–350 °C | — |
Temperature | 350–450 °C | — |
Temperature | 350–420 °C | — |
Temperature | 350–400 °C | — |
Temperature | 400–450 °C | — |
Temperature | 400–420 °C | — |
Temperature | 420–450 °C | — |
Temperature | 200–400 °C | — |
Temperature | 200–350 °C | — |
Temperature | 200–300 °C | — |
Temperature | 200–250 °C | — |
Temperature | 0–50 °C | — |
Temperature | 0–40 °C | — |
Temperature | 0–30 °C | — |
Temperature | 0–20 °C | — |
Temperature | 5–50 °C | — |
Temperature | 5–40 °C | — |
Temperature | 5–30 °C | — |
Temperature | 5–20 °C | — |
Temperature | 10–50 °C | — |
Temperature | 10–30 °C | — |
Temperature | 10–20 °C | — |
Temperature | 20–50 °C | — |
Temperature | 20–40 °C | — |
Temperature | 20–30 °C | — |
Duration | 600–36000 s | — |
Duration | 600–18000 s | — |
Duration | 600–10800 s | — |
Duration | 600–7200 s | — |
Duration | 600–3600 s | — |
Duration | 1200–36000 s | — |
Duration | 1200–18000 s | — |
Duration | 1200–10800 s | — |
Duration | 1200–7200 s | — |
Duration | 1200–3600 s | — |
Duration | 1800–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 1800–10800 s | — |
Duration | 1800–7200 s | — |
Duration | 1800–3600 s | — |
Duration | 2400–36000 s | — |
Duration | 2400–18000 s | — |
Duration | 2400–10800 s | — |
Duration | 2400–7200 s | — |
Duration | 2400–3600 s | — |
Duration | 1–10 hours | — |
Duration | 1–5 hours | — |
Duration | 1–3 hours | — |
Duration | 1–2 hours | — |
Temperature | 20–100 °C | — |
Temperature | 20–80 °C | — |
Temperature | 20–60 °C | — |
Temperature | 30–100 °C | — |
Duration | 600–72000 s | — |
Duration | 600–54000 s | — |
Duration | 1200–72000 s | — |
Duration | 1200–54000 s | — |
Duration | 1800–72000 s | — |
Duration | 1800–54000 s | — |
Duration | 2400–72000 s | — |
Duration | 2400–54000 s | — |
Duration | 1–20 hours | — |
Duration | 1–15 hours | — |
Temperature | 40–100 °C | — |
Temperature | 40–60 °C | — |
Temperature | 40–50 °C | — |
Temperature | 50–100 °C | — |
Temperature | 50–60 °C | — |
Temperature | 60–100 °C | — |
Temperature | 60–80 °C | — |
Temperature | 60–200 °C | — |
Temperature | 60–150 °C | — |
Temperature | 100–200 °C | — |
Temperature | 100–180 °C | — |
Temperature | 100–150 °C | — |
Temperature | 150–200 °C | — |
Temperature | 150–180 °C | — |
Temperature | 180–200 °C | — |
Temperature | 40–80 °C | — |
Temperature | 5–10 °C | — |
Temperature | 0–5 °C | — |
Temperature | 31–250 °C | — |
Thickness | ≥ 2800 cm | — |
Temperature | ≥ 200 °C | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 12 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 20 nm | — |
Temperature | 10–80 °C | — |
Temperature | 35–45 °C | — |
Temperature | 30–50 °C | — |