Patent
US 9,450,112GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
Richard J. Brown
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,450,112Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram of a GaN-based Schottky barrier diode (SBD); [0011]
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
FIG. 3 is an energy band diagram illustrating the interface between the Schottky contact and the epitaxial layer of the GaN-based SBD of
FIG. 4 is a simplified cross-sectional diagram of a GaN-based SBD according to an embodiment of the present invention; 25 [0014]
FIG. 5 is an energy band diagram of the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD illustrated in
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
FIG. 8 is an energy band diagram illustrating the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD …
FIG. 9 is an energy band diagram of a graded surface layer, according to one embodiment of the present invention, as compared with a surface layer having …
FIG. 10 is a simplified flowchart illustrating a method for fabricating a Schottky diode utilizing a surface layer as described herein, according to an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a Schottky diode using gallium nitride (GaN) materials, the method comprising: providing an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; forming an ohmic metal contact electrically coupled to the first surface of the n- type GaN substrate; forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; forming an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and forming a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The method of claim 1, wherein the AlGaN surface layer has a thickness which is less than a critical thickness, wherein the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer.
- 3.. canceled
canceled
The method of claim 3, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The method of claim 3, wherein a graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
A semiconductor device comprising: an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate; an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The device of claim 9, wherein the AlGaN surface layer has a thickness which is less than a
- 11.. canceled
canceled
The device of claim 11, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The device of claim 11, wherein the graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky barrier diode
Materials described outside the worked examples.
n-type GaN substrate
GaN
n-type AlGaN surface layer
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN epitaxial layer thickness | 1–100 um | GaN |
n-type AlGaN surface layer thickness (claim range) | 0.5–15 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,450,112Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram of a GaN-based Schottky barrier diode (SBD); [0011]
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
FIG. 3 is an energy band diagram illustrating the interface between the Schottky contact and the epitaxial layer of the GaN-based SBD of
FIG. 4 is a simplified cross-sectional diagram of a GaN-based SBD according to an embodiment of the present invention; 25 [0014]
FIG. 5 is an energy band diagram of the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD illustrated in
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
FIG. 8 is an energy band diagram illustrating the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD …
FIG. 9 is an energy band diagram of a graded surface layer, according to one embodiment of the present invention, as compared with a surface layer having …
FIG. 10 is a simplified flowchart illustrating a method for fabricating a Schottky diode utilizing a surface layer as described herein, according to an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a Schottky diode using gallium nitride (GaN) materials, the method comprising: providing an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; forming an ohmic metal contact electrically coupled to the first surface of the n- type GaN substrate; forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; forming an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and forming a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The method of claim 1, wherein the AlGaN surface layer has a thickness which is less than a critical thickness, wherein the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer.
- 3.. canceled
canceled
The method of claim 3, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The method of claim 3, wherein a graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
A semiconductor device comprising: an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate; an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The device of claim 9, wherein the AlGaN surface layer has a thickness which is less than a
- 11.. canceled
canceled
The device of claim 11, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The device of claim 11, wherein the graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky barrier diode
Materials described outside the worked examples.
n-type GaN substrate
GaN
n-type AlGaN surface layer
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN epitaxial layer thickness | 1–100 um | GaN |
n-type AlGaN surface layer thickness (claim range) | 0.5–15 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,450,112Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram of a GaN-based Schottky barrier diode (SBD); [0011]
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
FIG. 3 is an energy band diagram illustrating the interface between the Schottky contact and the epitaxial layer of the GaN-based SBD of
FIG. 4 is a simplified cross-sectional diagram of a GaN-based SBD according to an embodiment of the present invention; 25 [0014]
FIG. 5 is an energy band diagram of the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD illustrated in
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
FIG. 8 is an energy band diagram illustrating the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD …
FIG. 9 is an energy band diagram of a graded surface layer, according to one embodiment of the present invention, as compared with a surface layer having …
FIG. 10 is a simplified flowchart illustrating a method for fabricating a Schottky diode utilizing a surface layer as described herein, according to an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a Schottky diode using gallium nitride (GaN) materials, the method comprising: providing an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; forming an ohmic metal contact electrically coupled to the first surface of the n- type GaN substrate; forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; forming an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and forming a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The method of claim 1, wherein the AlGaN surface layer has a thickness which is less than a critical thickness, wherein the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer.
- 3.. canceled
canceled
The method of claim 3, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The method of claim 3, wherein a graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
A semiconductor device comprising: an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate; an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The device of claim 9, wherein the AlGaN surface layer has a thickness which is less than a
- 11.. canceled
canceled
The device of claim 11, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The device of claim 11, wherein the graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky barrier diode
Materials described outside the worked examples.
n-type GaN substrate
GaN
n-type AlGaN surface layer
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN epitaxial layer thickness | 1–100 um | GaN |
n-type AlGaN surface layer thickness (claim range) | 0.5–15 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,450,112Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram of a GaN-based Schottky barrier diode (SBD); [0011]
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
FIG. 3 is an energy band diagram illustrating the interface between the Schottky contact and the epitaxial layer of the GaN-based SBD of
FIG. 4 is a simplified cross-sectional diagram of a GaN-based SBD according to an embodiment of the present invention; 25 [0014]
FIG. 5 is an energy band diagram of the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD illustrated in
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
FIG. 8 is an energy band diagram illustrating the interfaces between the Schottky contact, the surface layer, and the epitaxial layer of the GaN-based SBD …
FIG. 9 is an energy band diagram of a graded surface layer, according to one embodiment of the present invention, as compared with a surface layer having …
FIG. 10 is a simplified flowchart illustrating a method for fabricating a Schottky diode utilizing a surface layer as described herein, according to an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a Schottky diode using gallium nitride (GaN) materials, the method comprising: providing an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; forming an ohmic metal contact electrically coupled to the first surface of the n- type GaN substrate; forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; forming an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and forming a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The method of claim 1, wherein the AlGaN surface layer has a thickness which is less than a critical thickness, wherein the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer.
- 3.. canceled
canceled
The method of claim 3, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The method of claim 3, wherein a graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
A semiconductor device comprising: an n-type GaN substrate having a first surface and a second surface, the second surface opposing the first surface; an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate; an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate, wherein the n-type GaN epitaxial layer comprises a polar GaN material; an n-type aluminum gallium nitride (A l GaN) surface layer coupled to the n-type GaN epitaxial layer; and a Schottky contact electrically coupled to the n-type A l GaN surface layer, wherein, during operation, an interface between the n-type GaN epitaxial layer and the n-type A l GaN surface layer is substantially free from a two-dimensional electron gas.
The device of claim 9, wherein the AlGaN surface layer has a thickness which is less than a
- 11.. canceled
canceled
The device of claim 11, wherein the thickness of the n-type Al GaN surface layer is between 0.5 nm and 15 nm.
The device of claim 11, wherein the graded aluminum mole fraction of the n-type A l GaN surface layer is graded as a function of thickness.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky barrier diode
Materials described outside the worked examples.
n-type GaN substrate
GaN
n-type AlGaN surface layer
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph providing the general I-V characteristics of the GaN-based SBD 20 shown in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type GaN epitaxial layer thickness | 1–100 um | GaN |
n-type AlGaN surface layer thickness (claim range) | 0.5–15 nm |
Related documents with shared materials, methods, properties, or citations.
ohmic metal contact
titanium-aluminum ohmic metal
Ti/Al
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
n-type AlGaN surface layer thickness (preferred range) | 1–3 nm | AlGaN |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 15 nm | — |
ohmic metal contact
titanium-aluminum ohmic metal
Ti/Al
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
n-type AlGaN surface layer thickness (preferred range) | 1–3 nm | AlGaN |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 15 nm | — |
ohmic metal contact
titanium-aluminum ohmic metal
Ti/Al
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
n-type AlGaN surface layer thickness (preferred range) | 1–3 nm | AlGaN |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 15 nm | — |
ohmic metal contact
titanium-aluminum ohmic metal
Ti/Al
FIG. 6 is a graph providing the general I-V characteristics of the GaN-based SBD illustrated in
FIG. 7B is a graph that plots the carrier density of a two-dimensional electron gas (2DEG) as a function of surface layer thickness according to an embodiment …
n-type AlGaN surface layer thickness (preferred range) | 1–3 nm | AlGaN |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 15 nm | — |