Patent
US 9,525,039METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH REGROWN GALLIUM NITRIDE LAYER
Isik C. Kizilyalli
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 9,525,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
FIG. 2 illustrates the formation, for example, by epitaxial growth, of a p-type I II-N epitaxial layer 210. As described below, the p-type I II -N epitaxial …
FIG. 3 illustrates the formation of dopant sources 31 0 a and 31 0 b by the patterning and removal of portions of the p-type I II -N epitaxial layer 210. The …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 5A. Although separate ohmic and Schottky contacts are illustrated in
FIG. 6 illustrates the formation of a back metal structure 610 on the bottom of GaN substrate 100. The back metal structure 610 can be one or more layers of …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an MPS diode (i.e., a merged p-i-n Schottky diode or a merged p-n Schottky diode) according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials, the method comprising: providing an n-type GaN-based substrate having a first surface and a second surface; forming an n-type GaN-based epitaxial layer coupled to the first surface of the n- type GaN-based substrate; forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer; removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources; regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer and p-type material in regions overlying the plurality of dopant sources; and forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.
The method of claim 1 wherein the first metallic structure comprises Schottky contacts electrically coupled to the n-type material in the regions overlying portions of the n-type GaN-based epitaxial layer and ohmic contacts electrically coupled to the p-type material in the regions overlying the plurality of dopant sources.
The method of claim 1 f u rther comprising forming a second metallic structure electrically coupled to the second surface of the n-type GaN-based substrate.
The method of claim 1 wherein regrowing the GaN-based epitaxial layer comprises using a blanket regrowth process.
The method of claim 1 wherein the n-type GaN-based substrate is characterized by a first n-type dopant concentration and the n-type GaN-based epitaxial layer is characterized by a second n-type dopant concentration less than the first n-type dopant concentration.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide edge termination to the MPS diode.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide a junction termination extension to the MPS diode. 16
Layer stacks claimed or described, ordered top of device to substrate.
merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
n-type GaN-based substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,525,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
FIG. 2 illustrates the formation, for example, by epitaxial growth, of a p-type I II-N epitaxial layer 210. As described below, the p-type I II -N epitaxial …
FIG. 3 illustrates the formation of dopant sources 31 0 a and 31 0 b by the patterning and removal of portions of the p-type I II -N epitaxial layer 210. The …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 5A. Although separate ohmic and Schottky contacts are illustrated in
FIG. 6 illustrates the formation of a back metal structure 610 on the bottom of GaN substrate 100. The back metal structure 610 can be one or more layers of …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an MPS diode (i.e., a merged p-i-n Schottky diode or a merged p-n Schottky diode) according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials, the method comprising: providing an n-type GaN-based substrate having a first surface and a second surface; forming an n-type GaN-based epitaxial layer coupled to the first surface of the n- type GaN-based substrate; forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer; removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources; regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer and p-type material in regions overlying the plurality of dopant sources; and forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.
The method of claim 1 wherein the first metallic structure comprises Schottky contacts electrically coupled to the n-type material in the regions overlying portions of the n-type GaN-based epitaxial layer and ohmic contacts electrically coupled to the p-type material in the regions overlying the plurality of dopant sources.
The method of claim 1 f u rther comprising forming a second metallic structure electrically coupled to the second surface of the n-type GaN-based substrate.
The method of claim 1 wherein regrowing the GaN-based epitaxial layer comprises using a blanket regrowth process.
The method of claim 1 wherein the n-type GaN-based substrate is characterized by a first n-type dopant concentration and the n-type GaN-based epitaxial layer is characterized by a second n-type dopant concentration less than the first n-type dopant concentration.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide edge termination to the MPS diode.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide a junction termination extension to the MPS diode. 16
Layer stacks claimed or described, ordered top of device to substrate.
merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
n-type GaN-based substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,525,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
FIG. 2 illustrates the formation, for example, by epitaxial growth, of a p-type I II-N epitaxial layer 210. As described below, the p-type I II -N epitaxial …
FIG. 3 illustrates the formation of dopant sources 31 0 a and 31 0 b by the patterning and removal of portions of the p-type I II -N epitaxial layer 210. The …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 5A. Although separate ohmic and Schottky contacts are illustrated in
FIG. 6 illustrates the formation of a back metal structure 610 on the bottom of GaN substrate 100. The back metal structure 610 can be one or more layers of …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an MPS diode (i.e., a merged p-i-n Schottky diode or a merged p-n Schottky diode) according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials, the method comprising: providing an n-type GaN-based substrate having a first surface and a second surface; forming an n-type GaN-based epitaxial layer coupled to the first surface of the n- type GaN-based substrate; forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer; removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources; regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer and p-type material in regions overlying the plurality of dopant sources; and forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.
The method of claim 1 wherein the first metallic structure comprises Schottky contacts electrically coupled to the n-type material in the regions overlying portions of the n-type GaN-based epitaxial layer and ohmic contacts electrically coupled to the p-type material in the regions overlying the plurality of dopant sources.
The method of claim 1 f u rther comprising forming a second metallic structure electrically coupled to the second surface of the n-type GaN-based substrate.
The method of claim 1 wherein regrowing the GaN-based epitaxial layer comprises using a blanket regrowth process.
The method of claim 1 wherein the n-type GaN-based substrate is characterized by a first n-type dopant concentration and the n-type GaN-based epitaxial layer is characterized by a second n-type dopant concentration less than the first n-type dopant concentration.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide edge termination to the MPS diode.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide a junction termination extension to the MPS diode. 16
Layer stacks claimed or described, ordered top of device to substrate.
merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
n-type GaN-based substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,525,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
FIG. 2 illustrates the formation, for example, by epitaxial growth, of a p-type I II-N epitaxial layer 210. As described below, the p-type I II -N epitaxial …
FIG. 3 illustrates the formation of dopant sources 31 0 a and 31 0 b by the patterning and removal of portions of the p-type I II -N epitaxial layer 210. The …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 5A. Although separate ohmic and Schottky contacts are illustrated in
FIG. 6 illustrates the formation of a back metal structure 610 on the bottom of GaN substrate 100. The back metal structure 610 can be one or more layers of …
FIG. 7 is a simplified flowchart illustrating a method of fabricating an MPS diode (i.e., a merged p-i-n Schottky diode or a merged p-n Schottky diode) according …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials, the method comprising: providing an n-type GaN-based substrate having a first surface and a second surface; forming an n-type GaN-based epitaxial layer coupled to the first surface of the n- type GaN-based substrate; forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer; removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources; regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer and p-type material in regions overlying the plurality of dopant sources; and forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.
The method of claim 1 wherein the first metallic structure comprises Schottky contacts electrically coupled to the n-type material in the regions overlying portions of the n-type GaN-based epitaxial layer and ohmic contacts electrically coupled to the p-type material in the regions overlying the plurality of dopant sources.
The method of claim 1 f u rther comprising forming a second metallic structure electrically coupled to the second surface of the n-type GaN-based substrate.
The method of claim 1 wherein regrowing the GaN-based epitaxial layer comprises using a blanket regrowth process.
The method of claim 1 wherein the n-type GaN-based substrate is characterized by a first n-type dopant concentration and the n-type GaN-based epitaxial layer is characterized by a second n-type dopant concentration less than the first n-type dopant concentration.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide edge termination to the MPS diode.
The method of claim 1 wherein at least one of the regions overlying the plurality of dopant sources is configured to provide a junction termination extension to the MPS diode. 16
Layer stacks claimed or described, ordered top of device to substrate.
merged p-i-n Schottky (MPS) diode
Materials described outside the worked examples.
n-type GaN-based substrate
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1-6) are discussed in terms of GaN substrates and GaN epitaxial layers, the present invention is not limited to these particular binary I II-V materials …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
| — |
Thickness | 50–500 nm | — |
Voltage | ≥ 1 V | — |
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
| — |
Thickness | 50–500 nm | — |
Voltage | ≥ 1 V | — |
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
| — |
Thickness | 50–500 nm | — |
Voltage | ≥ 1 V | — |
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
FIG. 4 illustrates epitaxial regrowth according to an embodiment of the present invention. As described below, the regrown GaN-based epitaxial layer 410 …
| — |
Thickness | 50–500 nm | — |
Voltage | ≥ 1 V | — |