Patent
US 10,510,532METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE USING THE MULTI ION IMPLANTATION
Jea Gun PARK
US
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US 10,510,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a gallium nitride substrate, the method comprising: forming a bonding oxide film on a first gallium nitride, said first gallium nitride substrate having a bow; performing a first ion implantation at least once by i rr adiating ions at an acceleration voltage of 10 keV to 200 keV with about 7 degrees slope from a perpendicular axis with regard t a surface of the first gallium nitride substrate, on which the bonding oxide film is formed, to form a damaged layer, thereby releasing the bow of the first gallium nitride; performing a second ion implantation by i rr adiating ions at about 7 degrees slope from a perpendicular axis with regard to the surface of the first gallium nitride, on which the bonding oxide film is formed, to form a blister layer; bonding the bonding oxide film of the first gallium nitride to a temporary substrate; separating the first gallium nitride using the blister layer to form a seed layer; and allowing growth of a second gallium nitride on the seed layer to form bulk gallium nitride s AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₄₀₁₂₅ wherein the thickness of the damaged layer is 200- 500 nm and Abow of the first gallium nitride is a 20-60 p m, wherein said Abow being a bow difference between an initial first gallium nitride and a bowing-released first gallium nitride after the first ion implantation. Currently amended
(Cu rr ently Amended) The method according to claim 1, wherein the second ion implantation for the blister layer is performed using at least one of hydrogen, helium, nitrogen, and argon. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.2.svg 0.16 5.9 Black and white comprises an N-face and a Ga-face. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.3.svg 0.16 5.76 Black and white the second ion implantation, the blister layer is formed on the Ga-face of the first gallium nitride. Currently amended
The method according to claim 1, wherein, in the performing of the second ion implantation, heat treatment for the blister layer is further performed. Original
The method according to claim 1, wherein the bonding is performed at 200 ° C to 450 ° C for 5 hours. Original
The method according to claim 1, wherein, in the allowing, the temporary substrate is further removed. Original
The method according to claim 1, wherein the temporary substrate comprises an amorphous thin film on a surface thereof. Original
. Canceled
. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.1.svg 0.16 5.55 Black and white formed at a depth of 0.1 p m to 4 p m from the surface of the first gallium nitride. Canceled
The method according to claim I, wherein the temporary substrate is at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC). Original
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride (first)
GaN
bonding oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–800 °C | — |
Temperature |
Table 1
The following Table 1 shows a bowing rate (A bowing) according to an acceleratio
p. 13
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Patent
Atlas literature
Patent
US 10,510,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a gallium nitride substrate, the method comprising: forming a bonding oxide film on a first gallium nitride, said first gallium nitride substrate having a bow; performing a first ion implantation at least once by i rr adiating ions at an acceleration voltage of 10 keV to 200 keV with about 7 degrees slope from a perpendicular axis with regard t a surface of the first gallium nitride substrate, on which the bonding oxide film is formed, to form a damaged layer, thereby releasing the bow of the first gallium nitride; performing a second ion implantation by i rr adiating ions at about 7 degrees slope from a perpendicular axis with regard to the surface of the first gallium nitride, on which the bonding oxide film is formed, to form a blister layer; bonding the bonding oxide film of the first gallium nitride to a temporary substrate; separating the first gallium nitride using the blister layer to form a seed layer; and allowing growth of a second gallium nitride on the seed layer to form bulk gallium nitride s AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₄₀₁₂₅ wherein the thickness of the damaged layer is 200- 500 nm and Abow of the first gallium nitride is a 20-60 p m, wherein said Abow being a bow difference between an initial first gallium nitride and a bowing-released first gallium nitride after the first ion implantation. Currently amended
(Cu rr ently Amended) The method according to claim 1, wherein the second ion implantation for the blister layer is performed using at least one of hydrogen, helium, nitrogen, and argon. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.2.svg 0.16 5.9 Black and white comprises an N-face and a Ga-face. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.3.svg 0.16 5.76 Black and white the second ion implantation, the blister layer is formed on the Ga-face of the first gallium nitride. Currently amended
The method according to claim 1, wherein, in the performing of the second ion implantation, heat treatment for the blister layer is further performed. Original
The method according to claim 1, wherein the bonding is performed at 200 ° C to 450 ° C for 5 hours. Original
The method according to claim 1, wherein, in the allowing, the temporary substrate is further removed. Original
The method according to claim 1, wherein the temporary substrate comprises an amorphous thin film on a surface thereof. Original
. Canceled
. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.1.svg 0.16 5.55 Black and white formed at a depth of 0.1 p m to 4 p m from the surface of the first gallium nitride. Canceled
The method according to claim I, wherein the temporary substrate is at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC). Original
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride (first)
GaN
bonding oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–800 °C | — |
Temperature |
Table 1
The following Table 1 shows a bowing rate (A bowing) according to an acceleratio
p. 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,510,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a gallium nitride substrate, the method comprising: forming a bonding oxide film on a first gallium nitride, said first gallium nitride substrate having a bow; performing a first ion implantation at least once by i rr adiating ions at an acceleration voltage of 10 keV to 200 keV with about 7 degrees slope from a perpendicular axis with regard t a surface of the first gallium nitride substrate, on which the bonding oxide film is formed, to form a damaged layer, thereby releasing the bow of the first gallium nitride; performing a second ion implantation by i rr adiating ions at about 7 degrees slope from a perpendicular axis with regard to the surface of the first gallium nitride, on which the bonding oxide film is formed, to form a blister layer; bonding the bonding oxide film of the first gallium nitride to a temporary substrate; separating the first gallium nitride using the blister layer to form a seed layer; and allowing growth of a second gallium nitride on the seed layer to form bulk gallium nitride s AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₄₀₁₂₅ wherein the thickness of the damaged layer is 200- 500 nm and Abow of the first gallium nitride is a 20-60 p m, wherein said Abow being a bow difference between an initial first gallium nitride and a bowing-released first gallium nitride after the first ion implantation. Currently amended
(Cu rr ently Amended) The method according to claim 1, wherein the second ion implantation for the blister layer is performed using at least one of hydrogen, helium, nitrogen, and argon. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.2.svg 0.16 5.9 Black and white comprises an N-face and a Ga-face. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.3.svg 0.16 5.76 Black and white the second ion implantation, the blister layer is formed on the Ga-face of the first gallium nitride. Currently amended
The method according to claim 1, wherein, in the performing of the second ion implantation, heat treatment for the blister layer is further performed. Original
The method according to claim 1, wherein the bonding is performed at 200 ° C to 450 ° C for 5 hours. Original
The method according to claim 1, wherein, in the allowing, the temporary substrate is further removed. Original
The method according to claim 1, wherein the temporary substrate comprises an amorphous thin film on a surface thereof. Original
. Canceled
. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.1.svg 0.16 5.55 Black and white formed at a depth of 0.1 p m to 4 p m from the surface of the first gallium nitride. Canceled
The method according to claim I, wherein the temporary substrate is at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC). Original
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride (first)
GaN
bonding oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–800 °C | — |
Temperature |
Table 1
The following Table 1 shows a bowing rate (A bowing) according to an acceleratio
p. 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,510,532Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a gallium nitride substrate, the method comprising: forming a bonding oxide film on a first gallium nitride, said first gallium nitride substrate having a bow; performing a first ion implantation at least once by i rr adiating ions at an acceleration voltage of 10 keV to 200 keV with about 7 degrees slope from a perpendicular axis with regard t a surface of the first gallium nitride substrate, on which the bonding oxide film is formed, to form a damaged layer, thereby releasing the bow of the first gallium nitride; performing a second ion implantation by i rr adiating ions at about 7 degrees slope from a perpendicular axis with regard to the surface of the first gallium nitride, on which the bonding oxide film is formed, to form a blister layer; bonding the bonding oxide film of the first gallium nitride to a temporary substrate; separating the first gallium nitride using the blister layer to form a seed layer; and allowing growth of a second gallium nitride on the seed layer to form bulk gallium nitride s AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₄₀₁₂₅ wherein the thickness of the damaged layer is 200- 500 nm and Abow of the first gallium nitride is a 20-60 p m, wherein said Abow being a bow difference between an initial first gallium nitride and a bowing-released first gallium nitride after the first ion implantation. Currently amended
(Cu rr ently Amended) The method according to claim 1, wherein the second ion implantation for the blister layer is performed using at least one of hydrogen, helium, nitrogen, and argon. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.2.svg 0.16 5.9 Black and white comprises an N-face and a Ga-face. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.3.svg 0.16 5.76 Black and white the second ion implantation, the blister layer is formed on the Ga-face of the first gallium nitride. Currently amended
The method according to claim 1, wherein, in the performing of the second ion implantation, heat treatment for the blister layer is further performed. Original
The method according to claim 1, wherein the bonding is performed at 200 ° C to 450 ° C for 5 hours. Original
The method according to claim 1, wherein, in the allowing, the temporary substrate is further removed. Original
The method according to claim 1, wherein the temporary substrate comprises an amorphous thin film on a surface thereof. Original
. Canceled
. SVG 15991505.08-29-2019.JZX₇JA₂DRXEAPX5.CLM.1.svg 0.16 5.55 Black and white formed at a depth of 0.1 p m to 4 p m from the surface of the first gallium nitride. Canceled
The method according to claim I, wherein the temporary substrate is at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC). Original
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride (first)
GaN
bonding oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The bonding oxide film 120 may be made of silicon oxide (SiO R) or aluminum oxide (A₁ 2 0 3). Thereafter, the method of fabricating a gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–800 °C | — |
Temperature |
Table 1
The following Table 1 shows a bowing rate (A bowing) according to an acceleratio
p. 13
Related documents with shared materials, methods, properties, or citations.
amorphous thin film
silicon oxide
SiOx
silicon nitride
SiNx
silicon oxynitride
SiON
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
| — |
Temperature | ≤ 400 °C | — |
Temperature | ≥ 800 °C | — |
Thickness | 200–500 nm | — |
amorphous thin film
silicon oxide
SiOx
silicon nitride
SiNx
silicon oxynitride
SiON
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
| — |
Temperature | ≤ 400 °C | — |
Temperature | ≥ 800 °C | — |
Thickness | 200–500 nm | — |
amorphous thin film
silicon oxide
SiOx
silicon nitride
SiNx
silicon oxynitride
SiON
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
| — |
Temperature | ≤ 400 °C | — |
Temperature | ≥ 800 °C | — |
Thickness | 200–500 nm | — |
amorphous thin film
silicon oxide
SiOx
silicon nitride
SiNx
silicon oxynitride
SiON
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 2 illustrates a transmission electron microscope (TEM) image of first gallium nitride implanted into a Ga-face of first gallium nitride by first ion …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 3A is a graph illustrating the thickness, which is dependent upon an acceleration voltage of first ion implantation, of a damaged layer according to a …
FIG. 4 is a graph illustrating a vacancy concentration dependent upon a depth from a surface of a Ga-face of first gallium nitride that has been subjected to …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 5 is a TEM image and graph illustrating an implanted ion amount and vacancy amount in first gallium nitride formed by performing second ion implantation …
FIG. 6 illustrates a TEM image of a gallium nitride substrate fabricated by a method of fabricating a gallium nitride substrate according to an embodiment of …
| — |
Temperature | ≤ 400 °C | — |
Temperature | ≥ 800 °C | — |
Thickness | 200–500 nm | — |