Gallium Nitride Based Semiconductor Devices and Methods of Manufacturing the Same

Jae-Hoon LEE

Patent

Atlas literature

Patent

US 8,969,915

Gallium Nitride Based Semiconductor Devices and Methods of Manufacturing the Same

Jae-Hoon LEE

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIGS. 1 0 A through 1 0 E are sectional views showing a method of manufacturing a GaN-based semiconductor device according to another embodiment of the present …

FIG. 2

FIG. 2 or may be formed to penetrate the third layer 30and to extend into the second layer 20 as shown in

FIG. 3

FIG. 3. The threshold voltage of the HFET device 200 may vary according to a depth of the recess region R 1. For example, as the recess region R 1 is formed to …

FIG. 4

FIGS. 4A through 4G are sectional views showing a method of manufacturing a GaN-based semiconductor device according to an embodiment of the present invention;

FIG. 5

FIG. 5 is a plan view for describing an operation for bonding two substrates in a method of manufacturing a GaN-based semiconductor device according to an …

FIG. 6

FIGS. 6A through 6F are sectional views for describing a method of forming a GaN-based thin-ﬁlm having a recess region in a method of manufacturing a GaN-based …

FIG. 7

FIGS. 7 and 8 are sectional views for describing a method of forming a GaN- based thin-ﬁlm having a recess region in a method of manufacturing a GaN-based …

FIG. 8

FIG. 8.

FIG. 9

FIG. 9 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention; and

FIG. 10

FIG. 10 B, an anode A l and a cathode C 1 may be arranged on the GaN-based multi-layer GL₂ to be apart from each other. An ohmic contact layer 1 may be formed …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

11 independent · 12 dependent

1
IndependentGaN-based multi-layerheat dissipation substrateHeterostructure Field Effect Transistor (HFET)
1. A gallium nitride (GaN) based semiconductor device comprising: a heat dissipation substrate; and a heterostructure ﬁeld eﬀect transistor (H FE T) device arranged on the heat dissipation substrate, wherein the HFET device comprises: a GaN-based multi-layer having a recess region close to the heat dissipation layer; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate, and the gate, the source, and the drain are attached to the heat dissipation substrate.
1. 2
  Dependent← claim 1Heterostructure Field Effect Transistor (HFET)
  The GaN-based semiconductor device of claim 1, wherein the recess region has a double recess structure.
2. 3
  Dependent← claim 12-dimensional electron gas (2DEG) layerHeterostructure Field Effect Transistor (HFET)
  The GaN-based semiconductor device of claim 1, wherein the GaN-based multi- layer comprises a 2-dimensional electron gas (2DEG) layer. DM US 536 4 7134- 1 050665 0463 3 SVG 14338187.07-22-2014.HXXT₆IMTPXXIFW3.CLM₂2464074.1.291.252.2236.385.svg 0.443 6.483 Graph Black and white
3. 4
  Dependent← claim 1AlyGa₁-yNAlxGa₁-xNHeterostructure Field Effect Transistor (HFET)
  The GaN-based semiconductor device of claim 1, wherein the GaN multi-layer comprises an A lyG1y N layer and an Al xGa1_ N layer which are sequentially disposed from the heat dissipation substrate, and in the A lyG_y N layer, 0.1 < y < 0.6, and in the A lxGas N layer, 0 < x < 0.01.
4. 7
  Dependent← claim 1heat dissipation substrateHeterostructure Field Effect Transistor (HFET)
  7. The GaN-based semiconductor device of claim 1, wherein the heat dissipation substrate comprises a material having a higher thermal conductivity than a sapphire substrate.
5. 9
  Dependent← claim 1Heterostructure Field Effect Transistor (HFET)
  The GaN-based semiconductor device of claim 1, further comprising a bonding layer between the heat dissipation substrate and the HFET device. DM US 53647 134-1 05 0 665 0463 4 SVG 14338187.07-22-2014.HXXT₆IMTPXXIFW3.CLM₂2464075.1.297.256.2239.390.svg 0.447 6.473 Graph Black and white
6. 10
  Dependent← claim 1passivation layerHeterostructure Field Effect Transistor (HFET)
  The GaN-based semiconductor device of claim 1, further comprising a passivation layer which is arranged between the heat dissipation substrate and the HFET device and covers at least a portion of the HFET device, wherein the passivation layer has a single layer structure or a multilayer structure including at least one of an aluminum oxide, a silicon nitride, and a silicon oxide.
11
IndependentGaN-based multi-layerheat dissipation substrateSchottky Diode
1 1. A gallium nitride (GaN) based semiconductor device comprising: a heat dissipation substrate; and a Schottky diode device arranged on the heat dissipation substrate, wherein the Schottky diode device comprises: a GaN-based multi-layer separated apart from the heat dissipation substrate; and an anode and a cathode that are arranged on a surface of the GaN-based multi-layer facing the heat dissipation substrate and are attached to the heat dissipation substrate, and the cathode and the GaN-based multi-layer make a Schottky contact.
1. 12
  Dependent← claim 112-dimensional electron gas (2DEG) layerSchottky Diode
  The GaN-based semiconductor device of claim 11, wherein the GaN-based multi- layer comprises a 2-dimensional electron gas (2DEG) layer.
2. 13
  Dependent← claim 11heat dissipation substrateSchottky Diode
  The GaN-based semiconductor device of claim 11, wherein the heat dissipation substrate comprises a material having a higher thermal conductivity than a sapphire substrate. DM US 536 4 7134- I 0 50665 0463 5 Application No. Not Yet Assigned D o cket No.: 050665-0463 Amendment dated July 2 2, 2014 First Preliminary Amendment
3. 14
  Dependent← claim 11Schottky Diode
  The GaN-based semiconductor device of claim 11, further comprising a bonding layer between the heat dissipation substrate and the Schottky diode device. 15-31.
15
Independent
canceled
16
Independent
canceled
17
Independent
canceled
18
Independent
canceled
19
Independent
canceled
20
Independent
canceled
21
Independent
canceled
22
Independent
canceled
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Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

Heterostructure Field Effect Transistor (HFET)

2-dimensional electron gas (2DEG) layerchannel

GaN-based multi-layeractive layer

heat dissipation substratesubstrate

Schottky Diode

2-dimensional electron gas (2DEG) layerchannel

GaN-based multi-layeractive layer

Materials

Materials described outside the worked examples.

GaN-based multi-layer

Active Semiconductor Layer

heat dissipation substrate

Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Wafer Bonding And Substrate Removal

Step 1

Process details

steps:form GaN-based multi-layer with recess region on first substrate (sapphire), form gate in recess region and source/drain on GaN multi-layer, attach second substrate (heat dissipation) to source, drain, and gate, remove first substrate by laser lift-off method

first substrate:sapphire

second substrate:heat dissipation substrate

Materials:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	25–40 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Gallium Nitride Based Semiconductor Devices and Methods of Manufacturing the Same | Matter42 Literature