Patent
US 10,892,254Defect-Tolerant Layout and Packaging for GaN Power Devices
Zhanming Li
US
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Patent
Atlas literature
Patent
US 10,892,254Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power switching device, comprising: at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; wherein only functional sub-devices in the at least one die are selectively connected together to provide the power switching device; wherein the functional sub-devices are distinguishable from any defective subdevices in the at least one die prior to packaging according to an identifying mark on defective sub-devices; wherein the at least one die is rectangular and the pl uralit y of sub-devices are each diamond- sha p ed, and each three of the diamond-sha p ed sub-devices are in a high-density hexagonal arrangement. Currently amended
2-6. Canceled
Canceled
The GaN power switching device of claim [[6]] 1, wherein a defective sub- device is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The GaN power switching device of claim 7, wherein the at least one die is packaged and only functional sub-devices are selectively connected together in parallel by land grid array or ball grid array metal bumping to the source (S), gate (G), and drain (D) terminals of the functional subdevices. Original
(withdrawn-currently amended) A method for making a gallium nitride (GaN) power switching device, comprising: preparing at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; distinguishing functional sub-devices from any defective sub-devices in the at least one die according to an identifying mark on defective subdevices; and packaging the at least one die by selectively connecting together in parallel only functional sub- devices in the at least one die; wherein the at least one die is rectangular and the plurality of sub-devices are each diamond- shaped, and each three of the diamond-shaped subdevices are in a high-density hexagonal arrangement; wherein the selectively connecting together in parallel only functional sub-devices in the at least one die provides the GaN power switching device. Currently amended
11-17. Canceled
Canceled
(withdrawn-currently amended) The method of claim [[17]] 10, wherein a defective subdevice is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The method of claim 18, wherein only functional sub-devices are selectively connected together in parallel by land grid array or ball grid and drain (D) terminals of the functional sub-devices.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,892,254Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power switching device, comprising: at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; wherein only functional sub-devices in the at least one die are selectively connected together to provide the power switching device; wherein the functional sub-devices are distinguishable from any defective subdevices in the at least one die prior to packaging according to an identifying mark on defective sub-devices; wherein the at least one die is rectangular and the pl uralit y of sub-devices are each diamond- sha p ed, and each three of the diamond-sha p ed sub-devices are in a high-density hexagonal arrangement. Currently amended
2-6. Canceled
Canceled
The GaN power switching device of claim [[6]] 1, wherein a defective sub- device is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The GaN power switching device of claim 7, wherein the at least one die is packaged and only functional sub-devices are selectively connected together in parallel by land grid array or ball grid array metal bumping to the source (S), gate (G), and drain (D) terminals of the functional subdevices. Original
(withdrawn-currently amended) A method for making a gallium nitride (GaN) power switching device, comprising: preparing at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; distinguishing functional sub-devices from any defective sub-devices in the at least one die according to an identifying mark on defective subdevices; and packaging the at least one die by selectively connecting together in parallel only functional sub- devices in the at least one die; wherein the at least one die is rectangular and the plurality of sub-devices are each diamond- shaped, and each three of the diamond-shaped subdevices are in a high-density hexagonal arrangement; wherein the selectively connecting together in parallel only functional sub-devices in the at least one die provides the GaN power switching device. Currently amended
11-17. Canceled
Canceled
(withdrawn-currently amended) The method of claim [[17]] 10, wherein a defective subdevice is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The method of claim 18, wherein only functional sub-devices are selectively connected together in parallel by land grid array or ball grid and drain (D) terminals of the functional sub-devices.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,892,254Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power switching device, comprising: at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; wherein only functional sub-devices in the at least one die are selectively connected together to provide the power switching device; wherein the functional sub-devices are distinguishable from any defective subdevices in the at least one die prior to packaging according to an identifying mark on defective sub-devices; wherein the at least one die is rectangular and the pl uralit y of sub-devices are each diamond- sha p ed, and each three of the diamond-sha p ed sub-devices are in a high-density hexagonal arrangement. Currently amended
2-6. Canceled
Canceled
The GaN power switching device of claim [[6]] 1, wherein a defective sub- device is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The GaN power switching device of claim 7, wherein the at least one die is packaged and only functional sub-devices are selectively connected together in parallel by land grid array or ball grid array metal bumping to the source (S), gate (G), and drain (D) terminals of the functional subdevices. Original
(withdrawn-currently amended) A method for making a gallium nitride (GaN) power switching device, comprising: preparing at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; distinguishing functional sub-devices from any defective sub-devices in the at least one die according to an identifying mark on defective subdevices; and packaging the at least one die by selectively connecting together in parallel only functional sub- devices in the at least one die; wherein the at least one die is rectangular and the plurality of sub-devices are each diamond- shaped, and each three of the diamond-shaped subdevices are in a high-density hexagonal arrangement; wherein the selectively connecting together in parallel only functional sub-devices in the at least one die provides the GaN power switching device. Currently amended
11-17. Canceled
Canceled
(withdrawn-currently amended) The method of claim [[17]] 10, wherein a defective subdevice is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The method of claim 18, wherein only functional sub-devices are selectively connected together in parallel by land grid array or ball grid and drain (D) terminals of the functional sub-devices.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,892,254Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power switching device, comprising: at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; wherein only functional sub-devices in the at least one die are selectively connected together to provide the power switching device; wherein the functional sub-devices are distinguishable from any defective subdevices in the at least one die prior to packaging according to an identifying mark on defective sub-devices; wherein the at least one die is rectangular and the pl uralit y of sub-devices are each diamond- sha p ed, and each three of the diamond-sha p ed sub-devices are in a high-density hexagonal arrangement. Currently amended
2-6. Canceled
Canceled
The GaN power switching device of claim [[6]] 1, wherein a defective sub- device is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The GaN power switching device of claim 7, wherein the at least one die is packaged and only functional sub-devices are selectively connected together in parallel by land grid array or ball grid array metal bumping to the source (S), gate (G), and drain (D) terminals of the functional subdevices. Original
(withdrawn-currently amended) A method for making a gallium nitride (GaN) power switching device, comprising: preparing at least one die comprising a plurality of sub-devices, wherein each sub-device is a switching device; distinguishing functional sub-devices from any defective sub-devices in the at least one die according to an identifying mark on defective subdevices; and packaging the at least one die by selectively connecting together in parallel only functional sub- devices in the at least one die; wherein the at least one die is rectangular and the plurality of sub-devices are each diamond- shaped, and each three of the diamond-shaped subdevices are in a high-density hexagonal arrangement; wherein the selectively connecting together in parallel only functional sub-devices in the at least one die provides the GaN power switching device. Currently amended
11-17. Canceled
Canceled
(withdrawn-currently amended) The method of claim [[17]] 10, wherein a defective subdevice is identified by identifying a drain terminal nearest to [[a]]the defective sub-device. Currently amended
The method of claim 18, wherein only functional sub-devices are selectively connected together in parallel by land grid array or ball grid and drain (D) terminals of the functional sub-devices.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
High-Side Gate Driver for Gallium Nitride Integrated Circuits
High-Side Gate Driver for Gallium Nitride Integrated Circuits
High-Side Gate Driver for Gallium Nitride Integrated Circuits