Patent
US 11,122,656APPLICATION STRUCTURE OF GALLIUM NITRIDE FIELD-EFFECT TRANSISTOR IN DIMMER CIRCUIT
Tsung Hsien YEN
US
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Patent
Atlas literature
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US 11,122,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a second embodiment of the present invention. Based on the circuit structure in the first embodiment, in a circuit structure in this embodiment, a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An application structure of a gallium nitride field-effect transistor in a dimmer circuit, comprising: an LED module; a power supply circuit, comprising a power supply, a dimmer unit, and a rectifier circuit that are electrically connected; a current holding circuit, electrically connected to the rectifier circuit, comprising a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and configured to provide a stable current to the dimmer unit, wherein the first control switch is provided with a gallium nitride field-effect transistor; and a drive circuit, electrically connected to the current holding circuit, comprising a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and configured to stably drive the LED module to emit light, wherein the second control switch is provided with a gallium nitride field-effect transistor.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the first control switch and the second control switch separately comprise two gallium nitride field-effect transistors.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the drive circuit is further electrically connected to a rectifier diode and a plurality of capacitors.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
An application structure including an LED module 4, power supply circuit 1, current holding circuit 2, and drive circuit 3. The current holding circuit 2 includes a first control switch 21 with two gallium nitride field-effect transistors 211, capacitor C4, and resistors R4, R6, R7. The drive circuit 3 includes a second control switch 31 with two gallium nitride field-effect transistors 311, screen flicker prevention chip 32, resistors R2, R3, R5, rectifier diode D2, and capacitors C₁ and C2. This structure cooperates with a triac dimmer to achieve stable current for flicker-free LED operation.
1 material
Based on the first embodiment circuit structure, the position of capacitor C₃ is adjusted in the current holding circuit 2 to cooperate with a different type of dimmer unit 12', achieving the same effects as the first embodiment.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride field-effect transistor in dimmer circuit
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,122,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a second embodiment of the present invention. Based on the circuit structure in the first embodiment, in a circuit structure in this embodiment, a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An application structure of a gallium nitride field-effect transistor in a dimmer circuit, comprising: an LED module; a power supply circuit, comprising a power supply, a dimmer unit, and a rectifier circuit that are electrically connected; a current holding circuit, electrically connected to the rectifier circuit, comprising a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and configured to provide a stable current to the dimmer unit, wherein the first control switch is provided with a gallium nitride field-effect transistor; and a drive circuit, electrically connected to the current holding circuit, comprising a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and configured to stably drive the LED module to emit light, wherein the second control switch is provided with a gallium nitride field-effect transistor.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the first control switch and the second control switch separately comprise two gallium nitride field-effect transistors.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the drive circuit is further electrically connected to a rectifier diode and a plurality of capacitors.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
An application structure including an LED module 4, power supply circuit 1, current holding circuit 2, and drive circuit 3. The current holding circuit 2 includes a first control switch 21 with two gallium nitride field-effect transistors 211, capacitor C4, and resistors R4, R6, R7. The drive circuit 3 includes a second control switch 31 with two gallium nitride field-effect transistors 311, screen flicker prevention chip 32, resistors R2, R3, R5, rectifier diode D2, and capacitors C₁ and C2. This structure cooperates with a triac dimmer to achieve stable current for flicker-free LED operation.
1 material
Based on the first embodiment circuit structure, the position of capacitor C₃ is adjusted in the current holding circuit 2 to cooperate with a different type of dimmer unit 12', achieving the same effects as the first embodiment.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride field-effect transistor in dimmer circuit
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,122,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a second embodiment of the present invention. Based on the circuit structure in the first embodiment, in a circuit structure in this embodiment, a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An application structure of a gallium nitride field-effect transistor in a dimmer circuit, comprising: an LED module; a power supply circuit, comprising a power supply, a dimmer unit, and a rectifier circuit that are electrically connected; a current holding circuit, electrically connected to the rectifier circuit, comprising a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and configured to provide a stable current to the dimmer unit, wherein the first control switch is provided with a gallium nitride field-effect transistor; and a drive circuit, electrically connected to the current holding circuit, comprising a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and configured to stably drive the LED module to emit light, wherein the second control switch is provided with a gallium nitride field-effect transistor.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the first control switch and the second control switch separately comprise two gallium nitride field-effect transistors.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the drive circuit is further electrically connected to a rectifier diode and a plurality of capacitors.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
An application structure including an LED module 4, power supply circuit 1, current holding circuit 2, and drive circuit 3. The current holding circuit 2 includes a first control switch 21 with two gallium nitride field-effect transistors 211, capacitor C4, and resistors R4, R6, R7. The drive circuit 3 includes a second control switch 31 with two gallium nitride field-effect transistors 311, screen flicker prevention chip 32, resistors R2, R3, R5, rectifier diode D2, and capacitors C₁ and C2. This structure cooperates with a triac dimmer to achieve stable current for flicker-free LED operation.
1 material
Based on the first embodiment circuit structure, the position of capacitor C₃ is adjusted in the current holding circuit 2 to cooperate with a different type of dimmer unit 12', achieving the same effects as the first embodiment.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride field-effect transistor in dimmer circuit
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,122,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a second embodiment of the present invention. Based on the circuit structure in the first embodiment, in a circuit structure in this embodiment, a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An application structure of a gallium nitride field-effect transistor in a dimmer circuit, comprising: an LED module; a power supply circuit, comprising a power supply, a dimmer unit, and a rectifier circuit that are electrically connected; a current holding circuit, electrically connected to the rectifier circuit, comprising a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and configured to provide a stable current to the dimmer unit, wherein the first control switch is provided with a gallium nitride field-effect transistor; and a drive circuit, electrically connected to the current holding circuit, comprising a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and configured to stably drive the LED module to emit light, wherein the second control switch is provided with a gallium nitride field-effect transistor.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the first control switch and the second control switch separately comprise two gallium nitride field-effect transistors.
The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the drive circuit is further electrically connected to a rectifier diode and a plurality of capacitors.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material
An application structure including an LED module 4, power supply circuit 1, current holding circuit 2, and drive circuit 3. The current holding circuit 2 includes a first control switch 21 with two gallium nitride field-effect transistors 211, capacitor C4, and resistors R4, R6, R7. The drive circuit 3 includes a second control switch 31 with two gallium nitride field-effect transistors 311, screen flicker prevention chip 32, resistors R2, R3, R5, rectifier diode D2, and capacitors C₁ and C2. This structure cooperates with a triac dimmer to achieve stable current for flicker-free LED operation.
1 material
Based on the first embodiment circuit structure, the position of capacitor C₃ is adjusted in the current holding circuit 2 to cooperate with a different type of dimmer unit 12', achieving the same effects as the first embodiment.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride field-effect transistor in dimmer circuit
Related documents with shared materials, methods, properties, or citations.
High-Side Gate Driver for Gallium Nitride Integrated Circuits
High-Side Gate Driver for Gallium Nitride Integrated Circuits
High-Side Gate Driver for Gallium Nitride Integrated Circuits