Patent
US 8,753,468METHOD FOR THE REDUCTION OF GRAPHENE FILM THICKNESS AND THE REMOVAL AND TRANSFER OF EPITAXIAL GRAPHENE FILMS FROM SiC SUBSTRATES
Joshua D. Caldwell
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,753,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depicting the step-by-step double-flip transfer procedure used for the initial epitaxial graphene transfers. Variations on these steps are …
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …
FIG. 4 is an X-ray photoemission spectra depicting the C 1 s and Si 2p emission lines collected from epitaxial graphene prior to removal (original graphene on …
FIG. 5 is a schematic depicting the step-by-step single-flip transfer procedure used for the epitaxial graphene transfers utilizing BCB between the SiC donor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013 AMENDMENTS TO THE CLAIMS Claims 1-6
canceled
canceled
canceled
canceled
canceled
(cu rr ently amended): A method for using release tape to reduce r-edueing graphene film thickness on a donor substrate and transfer traisfe- g graphene films from a donor substrate to a handle substrate, comprising: applying a release tape to an exposed t h e graphene surface on the donor substrate; applying a uniform force to the release tape; releasing the release tape from the donor substrate thereby leaving graphene on the release tape; applying the release tape with graphene onto the handle substrate; applying a uniform force to the release tape; and releasing the release tape from the handle substrate to completely transfer the graphene from the release tape to the handle substrate thereby leaving t he an exposed graphene surface on the handle substrate in the same orientation as it was on the donor substrate wherein the exposed graphene surface on the handle substrate is the same exposed graphene surface that was on the donor substrate.
The method of claim 7, wherein the donor substrate comprises SiC metal foil or other graphene growth substrate, and the handle substrate comprises a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.
The method of claim 7, wherein the release tape is a thermal- releasable tape, a UV-releasable tape, a water soluble tape, or any combination thereof.
The method of claim 7, wherein after the graphene is transferred, the handle substrate is annealed to improve the bond between the handle substrate and the transfe rred graphene film. 2 Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013
The method of claim 7, wherein the steps are repeated to completely remove all of the graphene from the donor substrate.
The method of claim 7, wherein a film of poly(methyl methacrylate) (PMMA) or similar is used to improve the adhesion between the release tape and the graphene surface, to fill in variations in the graphene film thickness, or both. Claims 13-16
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
donor substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1000–200000 cm | — |
Related documents with shared materials, methods, properties, or citations.
Engineering deterministic, tunable, and reversible folds in graphene with the use of ultrafast laser micro-patterned stretchable polymer substrate
3-DIMENSIONAL GRAPHENE STRUCTURE AND PROCESS FOR PREPARING AND TRANSFERRING THE SAME
Patent
Atlas literature
Patent
US 8,753,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depicting the step-by-step double-flip transfer procedure used for the initial epitaxial graphene transfers. Variations on these steps are …
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …
FIG. 4 is an X-ray photoemission spectra depicting the C 1 s and Si 2p emission lines collected from epitaxial graphene prior to removal (original graphene on …
FIG. 5 is a schematic depicting the step-by-step single-flip transfer procedure used for the epitaxial graphene transfers utilizing BCB between the SiC donor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013 AMENDMENTS TO THE CLAIMS Claims 1-6
canceled
canceled
canceled
canceled
canceled
(cu rr ently amended): A method for using release tape to reduce r-edueing graphene film thickness on a donor substrate and transfer traisfe- g graphene films from a donor substrate to a handle substrate, comprising: applying a release tape to an exposed t h e graphene surface on the donor substrate; applying a uniform force to the release tape; releasing the release tape from the donor substrate thereby leaving graphene on the release tape; applying the release tape with graphene onto the handle substrate; applying a uniform force to the release tape; and releasing the release tape from the handle substrate to completely transfer the graphene from the release tape to the handle substrate thereby leaving t he an exposed graphene surface on the handle substrate in the same orientation as it was on the donor substrate wherein the exposed graphene surface on the handle substrate is the same exposed graphene surface that was on the donor substrate.
The method of claim 7, wherein the donor substrate comprises SiC metal foil or other graphene growth substrate, and the handle substrate comprises a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.
The method of claim 7, wherein the release tape is a thermal- releasable tape, a UV-releasable tape, a water soluble tape, or any combination thereof.
The method of claim 7, wherein after the graphene is transferred, the handle substrate is annealed to improve the bond between the handle substrate and the transfe rred graphene film. 2 Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013
The method of claim 7, wherein the steps are repeated to completely remove all of the graphene from the donor substrate.
The method of claim 7, wherein a film of poly(methyl methacrylate) (PMMA) or similar is used to improve the adhesion between the release tape and the graphene surface, to fill in variations in the graphene film thickness, or both. Claims 13-16
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
donor substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1000–200000 cm | — |
Related documents with shared materials, methods, properties, or citations.
Engineering deterministic, tunable, and reversible folds in graphene with the use of ultrafast laser micro-patterned stretchable polymer substrate
3-DIMENSIONAL GRAPHENE STRUCTURE AND PROCESS FOR PREPARING AND TRANSFERRING THE SAME
Patent
Atlas literature
Patent
US 8,753,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depicting the step-by-step double-flip transfer procedure used for the initial epitaxial graphene transfers. Variations on these steps are …
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …
FIG. 4 is an X-ray photoemission spectra depicting the C 1 s and Si 2p emission lines collected from epitaxial graphene prior to removal (original graphene on …
FIG. 5 is a schematic depicting the step-by-step single-flip transfer procedure used for the epitaxial graphene transfers utilizing BCB between the SiC donor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013 AMENDMENTS TO THE CLAIMS Claims 1-6
canceled
canceled
canceled
canceled
canceled
(cu rr ently amended): A method for using release tape to reduce r-edueing graphene film thickness on a donor substrate and transfer traisfe- g graphene films from a donor substrate to a handle substrate, comprising: applying a release tape to an exposed t h e graphene surface on the donor substrate; applying a uniform force to the release tape; releasing the release tape from the donor substrate thereby leaving graphene on the release tape; applying the release tape with graphene onto the handle substrate; applying a uniform force to the release tape; and releasing the release tape from the handle substrate to completely transfer the graphene from the release tape to the handle substrate thereby leaving t he an exposed graphene surface on the handle substrate in the same orientation as it was on the donor substrate wherein the exposed graphene surface on the handle substrate is the same exposed graphene surface that was on the donor substrate.
The method of claim 7, wherein the donor substrate comprises SiC metal foil or other graphene growth substrate, and the handle substrate comprises a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.
The method of claim 7, wherein the release tape is a thermal- releasable tape, a UV-releasable tape, a water soluble tape, or any combination thereof.
The method of claim 7, wherein after the graphene is transferred, the handle substrate is annealed to improve the bond between the handle substrate and the transfe rred graphene film. 2 Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013
The method of claim 7, wherein the steps are repeated to completely remove all of the graphene from the donor substrate.
The method of claim 7, wherein a film of poly(methyl methacrylate) (PMMA) or similar is used to improve the adhesion between the release tape and the graphene surface, to fill in variations in the graphene film thickness, or both. Claims 13-16
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
donor substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1000–200000 cm | — |
Related documents with shared materials, methods, properties, or citations.
Engineering deterministic, tunable, and reversible folds in graphene with the use of ultrafast laser micro-patterned stretchable polymer substrate
3-DIMENSIONAL GRAPHENE STRUCTURE AND PROCESS FOR PREPARING AND TRANSFERRING THE SAME
Patent
Atlas literature
Patent
US 8,753,468Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depicting the step-by-step double-flip transfer procedure used for the initial epitaxial graphene transfers. Variations on these steps are …
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …
FIG. 4 is an X-ray photoemission spectra depicting the C 1 s and Si 2p emission lines collected from epitaxial graphene prior to removal (original graphene on …
FIG. 5 is a schematic depicting the step-by-step single-flip transfer procedure used for the epitaxial graphene transfers utilizing BCB between the SiC donor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013 AMENDMENTS TO THE CLAIMS Claims 1-6
canceled
canceled
canceled
canceled
canceled
(cu rr ently amended): A method for using release tape to reduce r-edueing graphene film thickness on a donor substrate and transfer traisfe- g graphene films from a donor substrate to a handle substrate, comprising: applying a release tape to an exposed t h e graphene surface on the donor substrate; applying a uniform force to the release tape; releasing the release tape from the donor substrate thereby leaving graphene on the release tape; applying the release tape with graphene onto the handle substrate; applying a uniform force to the release tape; and releasing the release tape from the handle substrate to completely transfer the graphene from the release tape to the handle substrate thereby leaving t he an exposed graphene surface on the handle substrate in the same orientation as it was on the donor substrate wherein the exposed graphene surface on the handle substrate is the same exposed graphene surface that was on the donor substrate.
The method of claim 7, wherein the donor substrate comprises SiC metal foil or other graphene growth substrate, and the handle substrate comprises a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.
The method of claim 7, wherein the release tape is a thermal- releasable tape, a UV-releasable tape, a water soluble tape, or any combination thereof.
The method of claim 7, wherein after the graphene is transferred, the handle substrate is annealed to improve the bond between the handle substrate and the transfe rred graphene film. 2 Application No. 12/855,692 Docket No.: 99894-US₂ Amendment dated Apri l 23, 2013
The method of claim 7, wherein the steps are repeated to completely remove all of the graphene from the donor substrate.
The method of claim 7, wherein a film of poly(methyl methacrylate) (PMMA) or similar is used to improve the adhesion between the release tape and the graphene surface, to fill in variations in the graphene film thickness, or both. Claims 13-16
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
donor substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is Atomic Force Microscope images of epitaxial graphene (a) prior to removal from the SiC donor substrate (as-grown), (b) following removal from the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1000–200000 cm | — |
Related documents with shared materials, methods, properties, or citations.
Engineering deterministic, tunable, and reversible folds in graphene with the use of ultrafast laser micro-patterned stretchable polymer substrate
3-DIMENSIONAL GRAPHENE STRUCTURE AND PROCESS FOR PREPARING AND TRANSFERRING THE SAME
release tape
SiC
metal foil
poly(methyl methacrylate) (PMMA)
graphene on SiC (epitaxial)
graphane
graphene oxide
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …
release tape
SiC
metal foil
poly(methyl methacrylate) (PMMA)
graphene on SiC (epitaxial)
graphane
graphene oxide
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …
release tape
SiC
metal foil
poly(methyl methacrylate) (PMMA)
graphene on SiC (epitaxial)
graphane
graphene oxide
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …
release tape
SiC
metal foil
poly(methyl methacrylate) (PMMA)
graphene on SiC (epitaxial)
graphane
graphene oxide
FIG. 3 is Raman scattering spectra collected from (a) epitaxial graphene prior to removal (pre transfer, black line) and post transfer (red line) and (b) a …