Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse | Matter42 Literature

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Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse | Matter42 Literature

Materials

Germanium

Ge

Studied Material

Also known as

GeGe nanomembraneGe NMPGeporous Ge

studied material

Gallium arsenide

GaAs

Studied Material

Also known as

GaAs

studied material

Ge wafer

Ge

Substrate / Dielectric

Also known as

100 mm Ge waferparent Ge waferepi-ready Ge substrate

Variables

orientation= 6° off-cut toward (111)

substrate or dielectric

Growth

electrochemical etching — bipolar electrochemical etching (BEE)

electrochemical etching

electrochemical processing

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Detachment

Step 1

Process Details

mode:mechanical detachment

target:Ge nanomembrane release from substrate

Samples:Monocrystalline Ge nanomembrane grown on porous Ge and detac

Characterization

SEM

SEMExperimental

Conditions

modecross-sectional imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	PGe layer thickness	174nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Porosity	PGe layer porosity	42%	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Surface Roughness Rms	PGe RMS roughness	2nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Substrate Thickness	Ge epitaxial structure thickness	700nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	epitaxial Ge/PGe RMS roughness	0.7nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	AFM RMS roughness	0.5nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Crystal Quality	HRTEM crystallinity assessment	no defects or dislocations observed	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Epitaxy Quality	GaAs layer quality	high-quality single-phase GaAs confirmed by HRXRD reciprocal space mapping	GaAs	Single-phase GaAs grown by chemical beam epitaxy on Ge nanom		—

Materials

Germanium

Ge

Studied Material

Also known as

GeGe nanomembraneGe NMPGeporous Ge

studied material

Gallium arsenide

GaAs

Studied Material

Also known as

GaAs

studied material

Ge wafer

Ge

Substrate / Dielectric

Also known as

100 mm Ge waferparent Ge waferepi-ready Ge substrate

Variables

orientation= 6° off-cut toward (111)

substrate or dielectric

Growth

electrochemical etching — bipolar electrochemical etching (BEE)

electrochemical etching

electrochemical processing

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Detachment

Step 1

Process Details

mode:mechanical detachment

target:Ge nanomembrane release from substrate

Samples:Monocrystalline Ge nanomembrane grown on porous Ge and detac

Characterization

SEM

SEMExperimental

Conditions

modecross-sectional imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	PGe layer thickness	174nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Porosity	PGe layer porosity	42%	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Surface Roughness Rms	PGe RMS roughness	2nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Substrate Thickness	Ge epitaxial structure thickness	700nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	epitaxial Ge/PGe RMS roughness	0.7nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	AFM RMS roughness	0.5nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Crystal Quality	HRTEM crystallinity assessment	no defects or dislocations observed	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Epitaxy Quality	GaAs layer quality	high-quality single-phase GaAs confirmed by HRXRD reciprocal space mapping	GaAs	Single-phase GaAs grown by chemical beam epitaxy on Ge nanom		—

Materials

Germanium

Ge

Studied Material

Also known as

GeGe nanomembraneGe NMPGeporous Ge

studied material

Gallium arsenide

GaAs

Studied Material

Also known as

GaAs

studied material

Ge wafer

Ge

Substrate / Dielectric

Also known as

100 mm Ge waferparent Ge waferepi-ready Ge substrate

Variables

orientation= 6° off-cut toward (111)

substrate or dielectric

Growth

electrochemical etching — bipolar electrochemical etching (BEE)

electrochemical etching

electrochemical processing

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Detachment

Step 1

Process Details

mode:mechanical detachment

target:Ge nanomembrane release from substrate

Samples:Monocrystalline Ge nanomembrane grown on porous Ge and detac

Characterization

SEM

SEMExperimental

Conditions

modecross-sectional imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	PGe layer thickness	174nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Porosity	PGe layer porosity	42%	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Surface Roughness Rms	PGe RMS roughness	2nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Substrate Thickness	Ge epitaxial structure thickness	700nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	epitaxial Ge/PGe RMS roughness	0.7nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	AFM RMS roughness	0.5nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Crystal Quality	HRTEM crystallinity assessment	no defects or dislocations observed	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Epitaxy Quality	GaAs layer quality	high-quality single-phase GaAs confirmed by HRXRD reciprocal space mapping	GaAs	Single-phase GaAs grown by chemical beam epitaxy on Ge nanom		—

Materials

Germanium

Ge

Studied Material

Also known as

GeGe nanomembraneGe NMPGeporous Ge

studied material

Gallium arsenide

GaAs

Studied Material

Also known as

GaAs

studied material

Ge wafer

Ge

Substrate / Dielectric

Also known as

100 mm Ge waferparent Ge waferepi-ready Ge substrate

Variables

orientation= 6° off-cut toward (111)

substrate or dielectric

Growth

electrochemical etching — bipolar electrochemical etching (BEE)

electrochemical etching

electrochemical processing

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Detachment

Step 1

Process Details

mode:mechanical detachment

target:Ge nanomembrane release from substrate

Samples:Monocrystalline Ge nanomembrane grown on porous Ge and detac

Characterization

SEM

SEMExperimental

Conditions

modecross-sectional imaging

Figure References

Figure 2

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	PGe layer thickness	174nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Porosity	PGe layer porosity	42%	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Surface Roughness Rms	PGe RMS roughness	2nm	Ge	Porous Ge layer formed on a 100 mm, 6° off-cut Ge wafer and		—
Substrate Thickness	Ge epitaxial structure thickness	700nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	epitaxial Ge/PGe RMS roughness	0.7nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Surface Roughness Rms	AFM RMS roughness	0.5nm	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Crystal Quality	HRTEM crystallinity assessment	no defects or dislocations observed	Ge	Monocrystalline Ge nanomembrane grown on porous Ge and detac		—
Qualitative Epitaxy Quality	GaAs layer quality	high-quality single-phase GaAs confirmed by HRXRD reciprocal space mapping	GaAs	Single-phase GaAs grown by chemical beam epitaxy on Ge nanom		—