Abstract

This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single-layer Al1−xScxN/GaN heterostructures exhibited lattice-matched composition within x = 0.09–0.11 using substrate growth temperatures between 330 °C and 630 °C. Using the lattice-matched composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface quality confirmed by XRD and STEM. These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 × 10¹⁴/cm2 for twenty channels, with sheet density scaling with the number of periods.

Abstract

This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single-layer Al1−xScxN/GaN heterostructures exhibited lattice-matched composition within x = 0.09–0.11 using substrate growth temperatures between 330 °C and 630 °C. Using the lattice-matched composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface quality confirmed by XRD and STEM. These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 × 10¹⁴/cm2 for twenty channels, with sheet density scaling with the number of periods.

Abstract

This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single-layer Al1−xScxN/GaN heterostructures exhibited lattice-matched composition within x = 0.09–0.11 using substrate growth temperatures between 330 °C and 630 °C. Using the lattice-matched composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface quality confirmed by XRD and STEM. These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 × 10¹⁴/cm2 for twenty channels, with sheet density scaling with the number of periods.

Abstract

This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single-layer Al1−xScxN/GaN heterostructures exhibited lattice-matched composition within x = 0.09–0.11 using substrate growth temperatures between 330 °C and 630 °C. Using the lattice-matched composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface quality confirmed by XRD and STEM. These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 × 10¹⁴/cm2 for twenty channels, with sheet density scaling with the number of periods.