Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Eleni Chatzikyriakou; Junliang Wang; Lucas Mazzella; Antonio Lacerda-Santos; Maria Cecilia da Silva Figueira; Alex Trellakis; Stefan Birner; Thomas Grange; Christopher Bäuerle; Xavier Waintal

doi:10.5281/zenodo.6498343

Paper details

Research paper

Experimental CharacterizationComputational Multiscale

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Eleni Chatzikyriakou, Junliang Wang, Lucas Mazzella, Antonio Lacerda-Santos et al.

arXiv·2022·10.5281/zenodo.6498343·arXiv:2205.00846

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

1 characterization3 properties1 figure

ExperimentalGaAsSubstrate / DielectricAlGaAsSubstrate / Dielectric

Materials

GaAs

Substrate / Dielectric

Also known as

gallium arsenide

substrate or dielectric

AlGaAs

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Count Measured Devices	devices measured	110	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Count Device Geometries	distinct geometries	48	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Prediction Accuracy	pinch-off voltage agreement	5%	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—

Properties

Type	Label	Value	Material	Sample	Source
Count Measured Devices	devices measured	110	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Count Device Geometries	distinct geometries	48	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Prediction Accuracy	pinch-off voltage agreement	5%	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—

Properties

Type	Label	Value	Material	Sample	Source
Count Measured Devices	devices measured	110	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Count Device Geometries	distinct geometries	48	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Prediction Accuracy	pinch-off voltage agreement	5%	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—

Properties

Type	Label	Value	Material	Sample	Source
Count Measured Devices	devices measured	110	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Count Device Geometries	distinct geometries	48	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—
Prediction Accuracy	pinch-off voltage agreement	5%	GaAs AlGaAs	A large set of quantum point contact devices fabricated on a	—

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

Samples

A large set of quantum point contact devices fabricated on a high-mobility GaAs/AlGaAs two-dimensional electron gas heterostructure; 110 devices with 48 different geometries.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations