Research paperExperimental CharacterizationTheoreticalSlip electron flow in GaAs microscale constrictionsD. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov et al.2025·10.48550/ARXIV.2502.10265·arXiv:2506.10276AbstractThe paper reports transport measurements of electron viscosity and electron-electron scattering length in GaAs/AlGaAs 2DEG Hall-bar constrictions. Using superballistic point contacts and magnetic focusing, the authors extract the scattering length, compare suspended and non-suspended devices, and find evidence for perfect boundary slip in microscale constrictions. The measured scattering length is quantitatively consistent with kinetic theory, supporting the relation between viscosity and electron-electron scattering length in the low-temperature regime.Read more
GaAs/AlGaAs Hall-bar device with point contacts and magnetic focusing geometry in the non-suspended state.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
Same GaAs/AlGaAs Hall-bar device after selective removal of the sacrificial Al0.8Ga0.2As layer, creating a suspended structure.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalSlip electron flow in GaAs microscale constrictionsD. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov et al.2025·10.48550/ARXIV.2502.10265·arXiv:2506.10276AbstractThe paper reports transport measurements of electron viscosity and electron-electron scattering length in GaAs/AlGaAs 2DEG Hall-bar constrictions. Using superballistic point contacts and magnetic focusing, the authors extract the scattering length, compare suspended and non-suspended devices, and find evidence for perfect boundary slip in microscale constrictions. The measured scattering length is quantitatively consistent with kinetic theory, supporting the relation between viscosity and electron-electron scattering length in the low-temperature regime.Read more
GaAs/AlGaAs Hall-bar device with point contacts and magnetic focusing geometry in the non-suspended state.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
Same GaAs/AlGaAs Hall-bar device after selective removal of the sacrificial Al0.8Ga0.2As layer, creating a suspended structure.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalSlip electron flow in GaAs microscale constrictionsD. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov et al.2025·10.48550/ARXIV.2502.10265·arXiv:2506.10276AbstractThe paper reports transport measurements of electron viscosity and electron-electron scattering length in GaAs/AlGaAs 2DEG Hall-bar constrictions. Using superballistic point contacts and magnetic focusing, the authors extract the scattering length, compare suspended and non-suspended devices, and find evidence for perfect boundary slip in microscale constrictions. The measured scattering length is quantitatively consistent with kinetic theory, supporting the relation between viscosity and electron-electron scattering length in the low-temperature regime.Read more
GaAs/AlGaAs Hall-bar device with point contacts and magnetic focusing geometry in the non-suspended state.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
Same GaAs/AlGaAs Hall-bar device after selective removal of the sacrificial Al0.8Ga0.2As layer, creating a suspended structure.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalSlip electron flow in GaAs microscale constrictionsD. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov et al.2025·10.48550/ARXIV.2502.10265·arXiv:2506.10276AbstractThe paper reports transport measurements of electron viscosity and electron-electron scattering length in GaAs/AlGaAs 2DEG Hall-bar constrictions. Using superballistic point contacts and magnetic focusing, the authors extract the scattering length, compare suspended and non-suspended devices, and find evidence for perfect boundary slip in microscale constrictions. The measured scattering length is quantitatively consistent with kinetic theory, supporting the relation between viscosity and electron-electron scattering length in the low-temperature regime.Read more
GaAs/AlGaAs Hall-bar device with point contacts and magnetic focusing geometry in the non-suspended state.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
Same GaAs/AlGaAs Hall-bar device after selective removal of the sacrificial Al0.8Ga0.2As layer, creating a suspended structure.1 characterization7 properties2 figuresExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAl0.8Ga0.2AsStudied MaterialExpand
