Research paperExperimental CharacterizationJoule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquidYi Wang, Shu-Yu Zheng, Li Lu, Kai Chang et al.arXiv preprint·2026·10.1103/9ckn-fzpc·arXiv:2603.21346AbstractWe perform a differential resistance study in the hydrodynamic regime of electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field (B) a Lorentzian profile occurs in the non-linear transport driven by a U-turn (ac) current loop, in (ac + dc) measurements a minimum deepens with the external dc current bias (jdc). Our analysis shows that the observed electronic transport valley induced by jdc is attributed to Joule heating effect on the electron temperature (Te) of electron liquid. Quantitatively, we demonstrate that the viscosity resistivity (∆ρ) is proportional to T−2 and is consistent with the dc-current induced electronic Gurzhi effect in various configurations of measurement.Read more
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure I.1 characterization5 properties3 figuresExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure II.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure III.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure IV.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Research paperExperimental CharacterizationJoule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquidYi Wang, Shu-Yu Zheng, Li Lu, Kai Chang et al.arXiv preprint·2026·10.1103/9ckn-fzpc·arXiv:2603.21346AbstractWe perform a differential resistance study in the hydrodynamic regime of electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field (B) a Lorentzian profile occurs in the non-linear transport driven by a U-turn (ac) current loop, in (ac + dc) measurements a minimum deepens with the external dc current bias (jdc). Our analysis shows that the observed electronic transport valley induced by jdc is attributed to Joule heating effect on the electron temperature (Te) of electron liquid. Quantitatively, we demonstrate that the viscosity resistivity (∆ρ) is proportional to T−2 and is consistent with the dc-current induced electronic Gurzhi effect in various configurations of measurement.Read more
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure I.1 characterization5 properties3 figuresExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure II.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure III.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure IV.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Research paperExperimental CharacterizationJoule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquidYi Wang, Shu-Yu Zheng, Li Lu, Kai Chang et al.arXiv preprint·2026·10.1103/9ckn-fzpc·arXiv:2603.21346AbstractWe perform a differential resistance study in the hydrodynamic regime of electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field (B) a Lorentzian profile occurs in the non-linear transport driven by a U-turn (ac) current loop, in (ac + dc) measurements a minimum deepens with the external dc current bias (jdc). Our analysis shows that the observed electronic transport valley induced by jdc is attributed to Joule heating effect on the electron temperature (Te) of electron liquid. Quantitatively, we demonstrate that the viscosity resistivity (∆ρ) is proportional to T−2 and is consistent with the dc-current induced electronic Gurzhi effect in various configurations of measurement.Read more
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure I.1 characterization5 properties3 figuresExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure II.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure III.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure IV.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Research paperExperimental CharacterizationJoule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquidYi Wang, Shu-Yu Zheng, Li Lu, Kai Chang et al.arXiv preprint·2026·10.1103/9ckn-fzpc·arXiv:2603.21346AbstractWe perform a differential resistance study in the hydrodynamic regime of electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field (B) a Lorentzian profile occurs in the non-linear transport driven by a U-turn (ac) current loop, in (ac + dc) measurements a minimum deepens with the external dc current bias (jdc). Our analysis shows that the observed electronic transport valley induced by jdc is attributed to Joule heating effect on the electron temperature (Te) of electron liquid. Quantitatively, we demonstrate that the viscosity resistivity (∆ρ) is proportional to T−2 and is consistent with the dc-current induced electronic Gurzhi effect in various configurations of measurement.Read more
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure I.1 characterization5 properties3 figuresExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure II.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure III.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
Hallbar device on a GaAs/AlGaAs quantum-well 2DEG wafer, Structure IV.5 propertiesExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialExpand
