Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations1 property2 figures
2 preparations
3 preparations1 characterization
3 preparations2 characterizations10 properties2 figures
4 preparations2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 254cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | A₁ | 284cm⁻¹ | — | |||
| Formation Energy | VS, VSe | lowest among simple defects | — | |||
| Binding Energy | VS-VSe binding energy | 0.05eV | — | |||
| Defect Excitation Energy | VS₀ | 1.73eV | — | |||
| Defect Excitation Energy | VSe₀ | 1.65eV | — | |||
| Defect Excitation Energy | VS-VSe₀ | 1.59eV | — | |||
| Defect Soc Splitting | VS₀ | 210meV | — | |||
| Defect Soc Splitting | VSe₀ | 214meV | — | |||
| Defect Soc Splitting | VS-VSe₀ | 293meV | — | |||
| Bound Exciton Count | isolated bound exciton emission lines | 3 | — | |||
| PL Peak | regex-detected PL peak | 300nm | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Spatial filtering of interlayer exciton ground state in WSe2/MoS2 heterobilayer
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Resonant Tunneling in Tri-layer 2H-MoTe2 grown by Molecular Beam Epitaxy Coupled with layered WSe2 carrier Reservoir
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations1 property2 figures
2 preparations
3 preparations1 characterization
3 preparations2 characterizations10 properties2 figures
4 preparations2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 254cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | A₁ | 284cm⁻¹ | — | |||
| Formation Energy | VS, VSe | lowest among simple defects | — | |||
| Binding Energy | VS-VSe binding energy | 0.05eV | — | |||
| Defect Excitation Energy | VS₀ | 1.73eV | — | |||
| Defect Excitation Energy | VSe₀ | 1.65eV | — | |||
| Defect Excitation Energy | VS-VSe₀ | 1.59eV | — | |||
| Defect Soc Splitting | VS₀ | 210meV | — | |||
| Defect Soc Splitting | VSe₀ | 214meV | — | |||
| Defect Soc Splitting | VS-VSe₀ | 293meV | — | |||
| Bound Exciton Count | isolated bound exciton emission lines | 3 | — | |||
| PL Peak | regex-detected PL peak | 300nm | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Spatial filtering of interlayer exciton ground state in WSe2/MoS2 heterobilayer
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Resonant Tunneling in Tri-layer 2H-MoTe2 grown by Molecular Beam Epitaxy Coupled with layered WSe2 carrier Reservoir
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations1 property2 figures
2 preparations
3 preparations1 characterization
3 preparations2 characterizations10 properties2 figures
4 preparations2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 254cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | A₁ | 284cm⁻¹ | — | |||
| Formation Energy | VS, VSe | lowest among simple defects | — | |||
| Binding Energy | VS-VSe binding energy | 0.05eV | — | |||
| Defect Excitation Energy | VS₀ | 1.73eV | — | |||
| Defect Excitation Energy | VSe₀ | 1.65eV | — | |||
| Defect Excitation Energy | VS-VSe₀ | 1.59eV | — | |||
| Defect Soc Splitting | VS₀ | 210meV | — | |||
| Defect Soc Splitting | VSe₀ | 214meV | — | |||
| Defect Soc Splitting | VS-VSe₀ | 293meV | — | |||
| Bound Exciton Count | isolated bound exciton emission lines | 3 | — | |||
| PL Peak | regex-detected PL peak | 300nm | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Spatial filtering of interlayer exciton ground state in WSe2/MoS2 heterobilayer
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Resonant Tunneling in Tri-layer 2H-MoTe2 grown by Molecular Beam Epitaxy Coupled with layered WSe2 carrier Reservoir
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations1 property2 figures
2 preparations
3 preparations1 characterization
3 preparations2 characterizations10 properties2 figures
4 preparations2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 254cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | A₁ | 284cm⁻¹ | — | |||
| Formation Energy | VS, VSe | lowest among simple defects | — | |||
| Binding Energy | VS-VSe binding energy | 0.05eV | — | |||
| Defect Excitation Energy | VS₀ | 1.73eV | — | |||
| Defect Excitation Energy | VSe₀ | 1.65eV | — | |||
| Defect Excitation Energy | VS-VSe₀ | 1.59eV | — | |||
| Defect Soc Splitting | VS₀ | 210meV | — | |||
| Defect Soc Splitting | VSe₀ | 214meV | — | |||
| Defect Soc Splitting | VS-VSe₀ | 293meV | — | |||
| Bound Exciton Count | isolated bound exciton emission lines | 3 | — | |||
| PL Peak | regex-detected PL peak | 300nm | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition
Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Spatial filtering of interlayer exciton ground state in WSe2/MoS2 heterobilayer
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Resonant Tunneling in Tri-layer 2H-MoTe2 grown by Molecular Beam Epitaxy Coupled with layered WSe2 carrier Reservoir
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