Research paperTheoreticalScattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wellsYi Huang, B. I. Shklovskii, M. A. ZudovarXiv preprint·2022·10.1103/PhysRevMaterials.6.L061001·arXiv:2205.00365AbstractMotivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells, we examine contributions to transport mobility and quantum mobility from background impurities, remote ionized donors, interface roughness, and alloy disorder as functions of electron density. The theory predicts that at low electron density both mobilities are limited by unintentional background impurities, while at higher density interface roughness limits transport mobility and remote donors limit quantum mobility. The work estimates impurity distributions consistent with the reported experimental mobility trends and suggests that future quantum-mobility measurements can distinguish background-impurity distributions in GaAs and AlGaAs.Read more
State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.18 propertiesSimulatedGaAsStudied MaterialAl0.12Ga0.88AsStudied MaterialExpand
Research paperTheoreticalScattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wellsYi Huang, B. I. Shklovskii, M. A. ZudovarXiv preprint·2022·10.1103/PhysRevMaterials.6.L061001·arXiv:2205.00365AbstractMotivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells, we examine contributions to transport mobility and quantum mobility from background impurities, remote ionized donors, interface roughness, and alloy disorder as functions of electron density. The theory predicts that at low electron density both mobilities are limited by unintentional background impurities, while at higher density interface roughness limits transport mobility and remote donors limit quantum mobility. The work estimates impurity distributions consistent with the reported experimental mobility trends and suggests that future quantum-mobility measurements can distinguish background-impurity distributions in GaAs and AlGaAs.Read more
State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.18 propertiesSimulatedGaAsStudied MaterialAl0.12Ga0.88AsStudied MaterialExpand
Research paperTheoreticalScattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wellsYi Huang, B. I. Shklovskii, M. A. ZudovarXiv preprint·2022·10.1103/PhysRevMaterials.6.L061001·arXiv:2205.00365AbstractMotivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells, we examine contributions to transport mobility and quantum mobility from background impurities, remote ionized donors, interface roughness, and alloy disorder as functions of electron density. The theory predicts that at low electron density both mobilities are limited by unintentional background impurities, while at higher density interface roughness limits transport mobility and remote donors limit quantum mobility. The work estimates impurity distributions consistent with the reported experimental mobility trends and suggests that future quantum-mobility measurements can distinguish background-impurity distributions in GaAs and AlGaAs.Read more
State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.18 propertiesSimulatedGaAsStudied MaterialAl0.12Ga0.88AsStudied MaterialExpand
Research paperTheoreticalScattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wellsYi Huang, B. I. Shklovskii, M. A. ZudovarXiv preprint·2022·10.1103/PhysRevMaterials.6.L061001·arXiv:2205.00365AbstractMotivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells, we examine contributions to transport mobility and quantum mobility from background impurities, remote ionized donors, interface roughness, and alloy disorder as functions of electron density. The theory predicts that at low electron density both mobilities are limited by unintentional background impurities, while at higher density interface roughness limits transport mobility and remote donors limit quantum mobility. The work estimates impurity distributions consistent with the reported experimental mobility trends and suggests that future quantum-mobility measurements can distinguish background-impurity distributions in GaAs and AlGaAs.Read more
State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.18 propertiesSimulatedGaAsStudied MaterialAl0.12Ga0.88AsStudied MaterialExpand
