Abstract

We propose novel van der Waals heterostructures composed of Xenes, transition metal dichalcogenides (TMDCs), phosphorene, and transition metal trichalcogenides (TMTCs), separated by insulating hexagonal boron nitride (hBN) layers. We theoretically investigate the behavior of Rydberg indirect excitons in Xenes/hBN/TMDC, Xenes/hBN/BP, and Xenes/hBN/TMTC heterostructures subjected to parallel external electric and magnetic fields perpendicular to the layers. By incorporating isotropic and anisotropic materials, we demonstrate that excitonic properties can be tuned through external field strengths and heterostructure design. We also explore time-periodic electric fields for Floquet band-structure engineering.

Abstract

We propose novel van der Waals heterostructures composed of Xenes, transition metal dichalcogenides (TMDCs), phosphorene, and transition metal trichalcogenides (TMTCs), separated by insulating hexagonal boron nitride (hBN) layers. We theoretically investigate the behavior of Rydberg indirect excitons in Xenes/hBN/TMDC, Xenes/hBN/BP, and Xenes/hBN/TMTC heterostructures subjected to parallel external electric and magnetic fields perpendicular to the layers. By incorporating isotropic and anisotropic materials, we demonstrate that excitonic properties can be tuned through external field strengths and heterostructure design. We also explore time-periodic electric fields for Floquet band-structure engineering.

Abstract

We propose novel van der Waals heterostructures composed of Xenes, transition metal dichalcogenides (TMDCs), phosphorene, and transition metal trichalcogenides (TMTCs), separated by insulating hexagonal boron nitride (hBN) layers. We theoretically investigate the behavior of Rydberg indirect excitons in Xenes/hBN/TMDC, Xenes/hBN/BP, and Xenes/hBN/TMTC heterostructures subjected to parallel external electric and magnetic fields perpendicular to the layers. By incorporating isotropic and anisotropic materials, we demonstrate that excitonic properties can be tuned through external field strengths and heterostructure design. We also explore time-periodic electric fields for Floquet band-structure engineering.

Abstract

We propose novel van der Waals heterostructures composed of Xenes, transition metal dichalcogenides (TMDCs), phosphorene, and transition metal trichalcogenides (TMTCs), separated by insulating hexagonal boron nitride (hBN) layers. We theoretically investigate the behavior of Rydberg indirect excitons in Xenes/hBN/TMDC, Xenes/hBN/BP, and Xenes/hBN/TMTC heterostructures subjected to parallel external electric and magnetic fields perpendicular to the layers. By incorporating isotropic and anisotropic materials, we demonstrate that excitonic properties can be tuned through external field strengths and heterostructure design. We also explore time-periodic electric fields for Floquet band-structure engineering.