Quantum simulation of honeycomb lattice model by high-order moire pattern

Paper details

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Qiang Wan, Chunlong Wu, Xun-Jiang Luo, Shenghao Dai et al.

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation2 characterizations5 properties3 figures

ExperimentalCStudied MaterialXeStudied MaterialSiCSubstrate / Dielectric

1 preparation2 characterizations3 properties3 figures

ExperimentalCStudied MaterialKrStudied MaterialSiCSubstrate / Dielectric

1 preparation1 characterization2 figures

ReferenceCStudied MaterialSiCSubstrate / Dielectric

graphene

Studied Material

Also known as

monolayer graphenepristine graphene

Variables

layer_count= 1

studied material

Related documents with shared materials, methods, properties, or citations.

Quantum simulation of honeycomb lattice model by high-order moire pattern | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Lattice Constant	a_Xe	4.5angstrom	Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Lattice Constant	a_Kr	4.04angstrom	Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.6nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Moire Period	\|a_m'\|	4.6nm	C Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.81nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Spectral Separation	Dirac-point double-peak separation	0.48eV	C	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Annealing Temperature	commensurate Kekule distortion condition	51.5K	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—

Type	Label	Value	Material	Sample	Source
Lattice Constant	a_Xe	4.5angstrom	Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Lattice Constant	a_Kr	4.04angstrom	Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.6nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Moire Period	\|a_m'\|	4.6nm	C Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.81nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Spectral Separation	Dirac-point double-peak separation	0.48eV	C	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Annealing Temperature	commensurate Kekule distortion condition	51.5K	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—

Type	Label	Value	Material	Sample	Source
Lattice Constant	a_Xe	4.5angstrom	Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Lattice Constant	a_Kr	4.04angstrom	Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.6nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Moire Period	\|a_m'\|	4.6nm	C Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.81nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Spectral Separation	Dirac-point double-peak separation	0.48eV	C	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Annealing Temperature	commensurate Kekule distortion condition	51.5K	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—

Type	Label	Value	Material	Sample	Source
Lattice Constant	a_Xe	4.5angstrom	Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Lattice Constant	a_Kr	4.04angstrom	Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.6nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Moire Period	\|a_m'\|	4.6nm	C Kr	Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Moire Period	\|a_m'\|	4.81nm	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—
Spectral Separation	Dirac-point double-peak separation	0.48eV	C	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos Graphene on n-type 6H-SiC(0001) with a krypton monolayer dep	—
Annealing Temperature	commensurate Kekule distortion condition	51.5K	C Xe	Graphene on n-type 6H-SiC(0001) with a xenon monolayer depos	—