Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations19 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dirac Point Energy | Dirac point energy | -0.04eV | — | |||
| Carrier Density | p-doping carrier density | 110000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -1.08eV | — | |||
| Carrier Density | electron density | 110000000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -0.83eV | — | |||
| Carrier Density | electron density | 509000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.36angstrom⁻¹ | — | |||
| Effective Mass | m* | 5me | — | |||
| Carrier Density | electron density | 685000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.4angstrom⁻¹ | — | |||
| Carrier Density | expected ordered K adlayer density | 477000000000000cm⁻² | — | |||
| Carrier Density | donated charge to graphene/Pb heterostack | 196000000000000cm⁻² | — | |||
| Carrier Density | charge density in graphene from replicated π-pockets | 110000000000000cm⁻² | — | |||
| Carrier Density | residual charge not in graphene or K adlayer | 86000000000000cm⁻² | — | |||
| Charge Transfer Fraction | fraction remaining in graphene | 0.56 | — | |||
| Charge Transfer Fraction | fraction transferred to Pb | 0.44 | — | |||
| Band Shift | rigid band shift | 0.09eV | — | |||
| Fermi Wavevector Change | increase in kF | 0.04angstrom⁻¹ | — | |||
| Electronic Band Mass | effective electron mass | 1.09me | — |
Related documents with shared materials, methods, properties, or citations.
Quantum simulation of honeycomb lattice model by high-order moire pattern
Methods of preparing a graphene sheet
Method for Preparing Structured Graphene on SiC Substrate Based on CL2 Reaction
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Direct observation of Floquet-Bloch states in monolayer graphene
Identifying Electronic Doorway States in the Secondary Electron Emission from Layered Materials
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Star-Mesh Quantized Hall Array Resistance Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations19 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dirac Point Energy | Dirac point energy | -0.04eV | — | |||
| Carrier Density | p-doping carrier density | 110000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -1.08eV | — | |||
| Carrier Density | electron density | 110000000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -0.83eV | — | |||
| Carrier Density | electron density | 509000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.36angstrom⁻¹ | — | |||
| Effective Mass | m* | 5me | — | |||
| Carrier Density | electron density | 685000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.4angstrom⁻¹ | — | |||
| Carrier Density | expected ordered K adlayer density | 477000000000000cm⁻² | — | |||
| Carrier Density | donated charge to graphene/Pb heterostack | 196000000000000cm⁻² | — | |||
| Carrier Density | charge density in graphene from replicated π-pockets | 110000000000000cm⁻² | — | |||
| Carrier Density | residual charge not in graphene or K adlayer | 86000000000000cm⁻² | — | |||
| Charge Transfer Fraction | fraction remaining in graphene | 0.56 | — | |||
| Charge Transfer Fraction | fraction transferred to Pb | 0.44 | — | |||
| Band Shift | rigid band shift | 0.09eV | — | |||
| Fermi Wavevector Change | increase in kF | 0.04angstrom⁻¹ | — | |||
| Electronic Band Mass | effective electron mass | 1.09me | — |
Related documents with shared materials, methods, properties, or citations.
Quantum simulation of honeycomb lattice model by high-order moire pattern
Methods of preparing a graphene sheet
Method for Preparing Structured Graphene on SiC Substrate Based on CL2 Reaction
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Direct observation of Floquet-Bloch states in monolayer graphene
Identifying Electronic Doorway States in the Secondary Electron Emission from Layered Materials
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Star-Mesh Quantized Hall Array Resistance Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations19 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dirac Point Energy | Dirac point energy | -0.04eV | — | |||
| Carrier Density | p-doping carrier density | 110000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -1.08eV | — | |||
| Carrier Density | electron density | 110000000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -0.83eV | — | |||
| Carrier Density | electron density | 509000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.36angstrom⁻¹ | — | |||
| Effective Mass | m* | 5me | — | |||
| Carrier Density | electron density | 685000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.4angstrom⁻¹ | — | |||
| Carrier Density | expected ordered K adlayer density | 477000000000000cm⁻² | — | |||
| Carrier Density | donated charge to graphene/Pb heterostack | 196000000000000cm⁻² | — | |||
| Carrier Density | charge density in graphene from replicated π-pockets | 110000000000000cm⁻² | — | |||
| Carrier Density | residual charge not in graphene or K adlayer | 86000000000000cm⁻² | — | |||
| Charge Transfer Fraction | fraction remaining in graphene | 0.56 | — | |||
| Charge Transfer Fraction | fraction transferred to Pb | 0.44 | — | |||
| Band Shift | rigid band shift | 0.09eV | — | |||
| Fermi Wavevector Change | increase in kF | 0.04angstrom⁻¹ | — | |||
| Electronic Band Mass | effective electron mass | 1.09me | — |
Related documents with shared materials, methods, properties, or citations.
Quantum simulation of honeycomb lattice model by high-order moire pattern
Methods of preparing a graphene sheet
Method for Preparing Structured Graphene on SiC Substrate Based on CL2 Reaction
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Direct observation of Floquet-Bloch states in monolayer graphene
Identifying Electronic Doorway States in the Secondary Electron Emission from Layered Materials
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Star-Mesh Quantized Hall Array Resistance Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations19 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dirac Point Energy | Dirac point energy | -0.04eV | — | |||
| Carrier Density | p-doping carrier density | 110000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -1.08eV | — | |||
| Carrier Density | electron density | 110000000000000cm⁻² | — | |||
| Dirac Point Energy | Dirac point energy | -0.83eV | — | |||
| Carrier Density | electron density | 509000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.36angstrom⁻¹ | — | |||
| Effective Mass | m* | 5me | — | |||
| Carrier Density | electron density | 685000000000000cm⁻² | — | |||
| Fermi Wavevector | kF | 1.4angstrom⁻¹ | — | |||
| Carrier Density | expected ordered K adlayer density | 477000000000000cm⁻² | — | |||
| Carrier Density | donated charge to graphene/Pb heterostack | 196000000000000cm⁻² | — | |||
| Carrier Density | charge density in graphene from replicated π-pockets | 110000000000000cm⁻² | — | |||
| Carrier Density | residual charge not in graphene or K adlayer | 86000000000000cm⁻² | — | |||
| Charge Transfer Fraction | fraction remaining in graphene | 0.56 | — | |||
| Charge Transfer Fraction | fraction transferred to Pb | 0.44 | — | |||
| Band Shift | rigid band shift | 0.09eV | — | |||
| Fermi Wavevector Change | increase in kF | 0.04angstrom⁻¹ | — | |||
| Electronic Band Mass | effective electron mass | 1.09me | — |
Related documents with shared materials, methods, properties, or citations.
Quantum simulation of honeycomb lattice model by high-order moire pattern
Methods of preparing a graphene sheet
Method for Preparing Structured Graphene on SiC Substrate Based on CL2 Reaction
Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Direct observation of Floquet-Bloch states in monolayer graphene
Identifying Electronic Doorway States in the Secondary Electron Emission from Layered Materials
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Star-Mesh Quantized Hall Array Resistance Devices