Abstract

Graphene on SiC intercalated with two-dimensional metal layers, such as Pt, offers a versatile platform for applications in spintronics, catalysis, and beyond. Recent studies have demonstrated that Pt atoms can intercalate at the heterointerface between SiC(0001) and the C-rich buffer layer. This work investigates morphology, chemistry, and electronic structure changes for buffer layer and monolayer graphene on SiC(0001) after Pt deposition and annealing cycles, which lead to Pt intercalation above 500 °C. STM reveals a single intercalated Pt layer under the buffer layer and a two-level intercalated structure in monolayer graphene regions, while XPS indicates formation of platinum silicides and ARPES shows emergence of quasi-free-standing graphene bands. The study highlights the pivotal role of buffer layer regions in facilitating Pt intercalation in monolayer graphene.

Abstract

Graphene on SiC intercalated with two-dimensional metal layers, such as Pt, offers a versatile platform for applications in spintronics, catalysis, and beyond. Recent studies have demonstrated that Pt atoms can intercalate at the heterointerface between SiC(0001) and the C-rich buffer layer. This work investigates morphology, chemistry, and electronic structure changes for buffer layer and monolayer graphene on SiC(0001) after Pt deposition and annealing cycles, which lead to Pt intercalation above 500 °C. STM reveals a single intercalated Pt layer under the buffer layer and a two-level intercalated structure in monolayer graphene regions, while XPS indicates formation of platinum silicides and ARPES shows emergence of quasi-free-standing graphene bands. The study highlights the pivotal role of buffer layer regions in facilitating Pt intercalation in monolayer graphene.

Abstract

Graphene on SiC intercalated with two-dimensional metal layers, such as Pt, offers a versatile platform for applications in spintronics, catalysis, and beyond. Recent studies have demonstrated that Pt atoms can intercalate at the heterointerface between SiC(0001) and the C-rich buffer layer. This work investigates morphology, chemistry, and electronic structure changes for buffer layer and monolayer graphene on SiC(0001) after Pt deposition and annealing cycles, which lead to Pt intercalation above 500 °C. STM reveals a single intercalated Pt layer under the buffer layer and a two-level intercalated structure in monolayer graphene regions, while XPS indicates formation of platinum silicides and ARPES shows emergence of quasi-free-standing graphene bands. The study highlights the pivotal role of buffer layer regions in facilitating Pt intercalation in monolayer graphene.

Abstract

Graphene on SiC intercalated with two-dimensional metal layers, such as Pt, offers a versatile platform for applications in spintronics, catalysis, and beyond. Recent studies have demonstrated that Pt atoms can intercalate at the heterointerface between SiC(0001) and the C-rich buffer layer. This work investigates morphology, chemistry, and electronic structure changes for buffer layer and monolayer graphene on SiC(0001) after Pt deposition and annealing cycles, which lead to Pt intercalation above 500 °C. STM reveals a single intercalated Pt layer under the buffer layer and a two-level intercalated structure in monolayer graphene regions, while XPS indicates formation of platinum silicides and ARPES shows emergence of quasi-free-standing graphene bands. The study highlights the pivotal role of buffer layer regions in facilitating Pt intercalation in monolayer graphene.