Research paper
Computational DFTComputed PhononComputed PLEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | hBN host symmetry used in calculations | P63/mmc | — | — | ||
| Optical Band Gap | SCAN-predicted hBN band gap | 5eV | — | — | ||
| Formation Energy | CNCB defect formation energy | 5.17eV | — | |||
| Formation Energy | CNCN defect formation energy | 2.88eV | — | |||
| Formation Energy | CNCN defect formation energy | 8.08eV | — | |||
| Formation Energy | CBCB defect formation energy | 3.85eV | — | |||
| Formation Energy | CBCB defect formation energy | 9.05eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 21eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 17.7eV | — | |||
| Calculated Pl Peak | ZPL | 1.72eV | — | |||
| Calculated Pl Peak | ZPL | 1.8eV | — | |||
| Calculated Pl Peak | ZPL | 2.1eV | — | |||
| Calculated Pl Peak | ZPL | 2.4eV | — | |||
| Calculated Pl Peak | ZPL trend | visible range | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Native antisite defects in h-BN
Anisotropic Interfacial Force Field for Interfaces of Water with Hexagonal Boron Nitride
Beyond Hexagonal Boron Nitride: First-Principles Study of Pentaoctite-BN and Pop-BN Monolayers
Blue quantum emitter in hexagonal boron nitride and carbon chain tetramer: proposition of identification
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
Quasiparticle states of hexagonal BN: A van der Waals density functional study
Generation of phonon quantum states and quantum correlations among single photon emitters in hexagonal boron nitride
Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics
Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes
Nitrogen-monovacancy (VN) Hexagonal Boron Nitride 2D Monolayer Material as an Efficient Electrocatalyst for CO2 Reduction Reaction
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Electronic and Vibrational Properties of Layered Boron Nitride Polymorphs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | hBN host symmetry used in calculations | P63/mmc | — | — | ||
| Optical Band Gap | SCAN-predicted hBN band gap | 5eV | — | — | ||
| Formation Energy | CNCB defect formation energy | 5.17eV | — | |||
| Formation Energy | CNCN defect formation energy | 2.88eV | — | |||
| Formation Energy | CNCN defect formation energy | 8.08eV | — | |||
| Formation Energy | CBCB defect formation energy | 3.85eV | — | |||
| Formation Energy | CBCB defect formation energy | 9.05eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 21eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 17.7eV | — | |||
| Calculated Pl Peak | ZPL | 1.72eV | — | |||
| Calculated Pl Peak | ZPL | 1.8eV | — | |||
| Calculated Pl Peak | ZPL | 2.1eV | — | |||
| Calculated Pl Peak | ZPL | 2.4eV | — | |||
| Calculated Pl Peak | ZPL trend | visible range | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Native antisite defects in h-BN
Anisotropic Interfacial Force Field for Interfaces of Water with Hexagonal Boron Nitride
Beyond Hexagonal Boron Nitride: First-Principles Study of Pentaoctite-BN and Pop-BN Monolayers
Blue quantum emitter in hexagonal boron nitride and carbon chain tetramer: proposition of identification
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
Quasiparticle states of hexagonal BN: A van der Waals density functional study
Generation of phonon quantum states and quantum correlations among single photon emitters in hexagonal boron nitride
Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics
Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes
Nitrogen-monovacancy (VN) Hexagonal Boron Nitride 2D Monolayer Material as an Efficient Electrocatalyst for CO2 Reduction Reaction
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Electronic and Vibrational Properties of Layered Boron Nitride Polymorphs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | hBN host symmetry used in calculations | P63/mmc | — | — | ||
| Optical Band Gap | SCAN-predicted hBN band gap | 5eV | — | — | ||
| Formation Energy | CNCB defect formation energy | 5.17eV | — | |||
| Formation Energy | CNCN defect formation energy | 2.88eV | — | |||
| Formation Energy | CNCN defect formation energy | 8.08eV | — | |||
| Formation Energy | CBCB defect formation energy | 3.85eV | — | |||
| Formation Energy | CBCB defect formation energy | 9.05eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 21eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 17.7eV | — | |||
| Calculated Pl Peak | ZPL | 1.72eV | — | |||
| Calculated Pl Peak | ZPL | 1.8eV | — | |||
| Calculated Pl Peak | ZPL | 2.1eV | — | |||
| Calculated Pl Peak | ZPL | 2.4eV | — | |||
| Calculated Pl Peak | ZPL trend | visible range | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Native antisite defects in h-BN
Anisotropic Interfacial Force Field for Interfaces of Water with Hexagonal Boron Nitride
Beyond Hexagonal Boron Nitride: First-Principles Study of Pentaoctite-BN and Pop-BN Monolayers
Blue quantum emitter in hexagonal boron nitride and carbon chain tetramer: proposition of identification
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
Quasiparticle states of hexagonal BN: A van der Waals density functional study
Generation of phonon quantum states and quantum correlations among single photon emitters in hexagonal boron nitride
Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics
Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes
Nitrogen-monovacancy (VN) Hexagonal Boron Nitride 2D Monolayer Material as an Efficient Electrocatalyst for CO2 Reduction Reaction
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Electronic and Vibrational Properties of Layered Boron Nitride Polymorphs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | hBN host symmetry used in calculations | P63/mmc | — | — | ||
| Optical Band Gap | SCAN-predicted hBN band gap | 5eV | — | — | ||
| Formation Energy | CNCB defect formation energy | 5.17eV | — | |||
| Formation Energy | CNCN defect formation energy | 2.88eV | — | |||
| Formation Energy | CNCN defect formation energy | 8.08eV | — | |||
| Formation Energy | CBCB defect formation energy | 3.85eV | — | |||
| Formation Energy | CBCB defect formation energy | 9.05eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 21eV | — | |||
| Formation Energy | dissociated-state formation energy estimate | 17.7eV | — | |||
| Calculated Pl Peak | ZPL | 1.72eV | — | |||
| Calculated Pl Peak | ZPL | 1.8eV | — | |||
| Calculated Pl Peak | ZPL | 2.1eV | — | |||
| Calculated Pl Peak | ZPL | 2.4eV | — | |||
| Calculated Pl Peak | ZPL trend | visible range | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Native antisite defects in h-BN
Anisotropic Interfacial Force Field for Interfaces of Water with Hexagonal Boron Nitride
Beyond Hexagonal Boron Nitride: First-Principles Study of Pentaoctite-BN and Pop-BN Monolayers
Blue quantum emitter in hexagonal boron nitride and carbon chain tetramer: proposition of identification
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
Quasiparticle states of hexagonal BN: A van der Waals density functional study
Generation of phonon quantum states and quantum correlations among single photon emitters in hexagonal boron nitride
Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics
Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes
Nitrogen-monovacancy (VN) Hexagonal Boron Nitride 2D Monolayer Material as an Efficient Electrocatalyst for CO2 Reduction Reaction
Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects
Electronic and Vibrational Properties of Layered Boron Nitride Polymorphs
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