Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Nasrin Estaji; Ismaeil Abdolhosseini Sarsari; Gergő Thiering; Adam Gali

doi:10.1103/gqfq-5rb4

Paper details

Research paper

Computational DFTComputed PhononTheoretical

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Nasrin Estaji, Ismaeil Abdolhosseini Sarsari, Gergő Thiering, Adam Gali

arXiv·2025·10.1103/gqfq-5rb4·arXiv:2504.00154

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

1 characterization2 properties1 figure

Simulated Supercell DftBNStudied Material

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

1 characterization2 properties1 figure

Simulated Supercell DftBNStudied Material

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

1 characterization1 property1 figure

Simulated Supercell DftBNStudied Material

Materials

monolayer boron nitride

Studied Material

Also known as

monolayer BN

Variables

polytype= monolayer

studied material

hexagonal boron nitride

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Calculated Phonon Peak	dominant spin-phonon spectral peak	11meV	BN	Freestanding monolayer BN supercell containing a negatively	—
Calculated Phonon Peak	dominant spin-phonon spectral peak	15meV	BN	AA′-stacked hexagonal BN supercell containing a negatively c	—
Calculated Relaxation Rate Scaling	temperature dependence of 1/T₁	T^2	BN BN BN	Freestanding monolayer BN supercell containing a negatively AA′-stacked hexagonal BN supercell containing a negatively c ABC-stacked rhombohedral BN supercell containing a negativel	—

Properties

Type	Label	Value	Material	Sample	Source
Calculated Phonon Peak	dominant spin-phonon spectral peak	11meV	BN	Freestanding monolayer BN supercell containing a negatively	—
Calculated Phonon Peak	dominant spin-phonon spectral peak	15meV	BN	AA′-stacked hexagonal BN supercell containing a negatively c	—
Calculated Relaxation Rate Scaling	temperature dependence of 1/T₁	T^2	BN BN BN	Freestanding monolayer BN supercell containing a negatively AA′-stacked hexagonal BN supercell containing a negatively c ABC-stacked rhombohedral BN supercell containing a negativel	—

Properties

Type	Label	Value	Material	Sample	Source
Calculated Phonon Peak	dominant spin-phonon spectral peak	11meV	BN	Freestanding monolayer BN supercell containing a negatively	—
Calculated Phonon Peak	dominant spin-phonon spectral peak	15meV	BN	AA′-stacked hexagonal BN supercell containing a negatively c	—
Calculated Relaxation Rate Scaling	temperature dependence of 1/T₁	T^2	BN BN BN	Freestanding monolayer BN supercell containing a negatively AA′-stacked hexagonal BN supercell containing a negatively c ABC-stacked rhombohedral BN supercell containing a negativel	—

Properties

Type	Label	Value	Material	Sample	Source
Calculated Phonon Peak	dominant spin-phonon spectral peak	11meV	BN	Freestanding monolayer BN supercell containing a negatively	—
Calculated Phonon Peak	dominant spin-phonon spectral peak	15meV	BN	AA′-stacked hexagonal BN supercell containing a negatively c	—
Calculated Relaxation Rate Scaling	temperature dependence of 1/T₁	T^2	BN BN BN	Freestanding monolayer BN supercell containing a negatively AA′-stacked hexagonal BN supercell containing a negatively c ABC-stacked rhombohedral BN supercell containing a negativel	—

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

Samples

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (VB^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (VB^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (VB^-).

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

Freestanding monolayer BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

AA′-stacked hexagonal BN supercell containing a negatively charged boron-vacancy defect (V_B^-).

ABC-stacked rhombohedral BN supercell containing a negatively charged boron-vacancy defect (V_B^-).