Research paper
Computational DFT| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 2.49angstrom | — | |||
| Xrd Lattice Constant C | c | 6.558angstrom | — | |||
| Xrd Lattice Constant A | a | 2.502angstrom | — | |||
| Xrd Lattice Constant C | c | 6.515angstrom | — | |||
| Formation Enthalpy | compound formation enthalpy | -2.89eV | — | |||
| Band Gap | bulk band gap | 4.83eV | — | |||
| Band Gap | bulk band gap | 5.95eV | — | |||
| Formation Energy | neutral trans conformer | 3.3eV | — | |||
| Formation Energy | neutral cis conformer | 3.24eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.24eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.16eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.07eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.23eV | — | |||
| Optical Transition Energy | zero-phonon line | 2.77eV | — | |||
| Radiative Lifetime | radiative lifetime | 1.6ns | — | |||
| Huang Rhys Factor | Huang-Rhys factor | 1.5 | — | |||
| Activation Energy | rate-limiting process inferred from annealing stability | 3.25eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 2.49angstrom | — | |||
| Xrd Lattice Constant C | c | 6.558angstrom | — | |||
| Xrd Lattice Constant A | a | 2.502angstrom | — | |||
| Xrd Lattice Constant C | c | 6.515angstrom | — | |||
| Formation Enthalpy | compound formation enthalpy | -2.89eV | — | |||
| Band Gap | bulk band gap | 4.83eV | — | |||
| Band Gap | bulk band gap | 5.95eV | — | |||
| Formation Energy | neutral trans conformer | 3.3eV | — | |||
| Formation Energy | neutral cis conformer | 3.24eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.24eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.16eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.07eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.23eV | — | |||
| Optical Transition Energy | zero-phonon line | 2.77eV | — | |||
| Radiative Lifetime | radiative lifetime | 1.6ns | — | |||
| Huang Rhys Factor | Huang-Rhys factor | 1.5 | — | |||
| Activation Energy | rate-limiting process inferred from annealing stability | 3.25eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 2.49angstrom | — | |||
| Xrd Lattice Constant C | c | 6.558angstrom | — | |||
| Xrd Lattice Constant A | a | 2.502angstrom | — | |||
| Xrd Lattice Constant C | c | 6.515angstrom | — | |||
| Formation Enthalpy | compound formation enthalpy | -2.89eV | — | |||
| Band Gap | bulk band gap | 4.83eV | — | |||
| Band Gap | bulk band gap | 5.95eV | — | |||
| Formation Energy | neutral trans conformer | 3.3eV | — | |||
| Formation Energy | neutral cis conformer | 3.24eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.24eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.16eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.07eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.23eV | — | |||
| Optical Transition Energy | zero-phonon line | 2.77eV | — | |||
| Radiative Lifetime | radiative lifetime | 1.6ns | — | |||
| Huang Rhys Factor | Huang-Rhys factor | 1.5 | — | |||
| Activation Energy | rate-limiting process inferred from annealing stability | 3.25eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 2.49angstrom | — | |||
| Xrd Lattice Constant C | c | 6.558angstrom | — | |||
| Xrd Lattice Constant A | a | 2.502angstrom | — | |||
| Xrd Lattice Constant C | c | 6.515angstrom | — | |||
| Formation Enthalpy | compound formation enthalpy | -2.89eV | — | |||
| Band Gap | bulk band gap | 4.83eV | — | |||
| Band Gap | bulk band gap | 5.95eV | — | |||
| Formation Energy | neutral trans conformer | 3.3eV | — | |||
| Formation Energy | neutral cis conformer | 3.24eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.24eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.16eV | — | |||
| Defect Charge Transition Level | (+/0) | 1.07eV | — | |||
| Defect Charge Transition Level | (0/-) | 5.23eV | — | |||
| Optical Transition Energy | zero-phonon line | 2.77eV | — | |||
| Radiative Lifetime | radiative lifetime | 1.6ns | — | |||
| Huang Rhys Factor | Huang-Rhys factor | 1.5 | — | |||
| Activation Energy | rate-limiting process inferred from annealing stability | 3.25eV | — |