Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | field effect mobility | 0.001cm²/Vs | — | |||
| Fet Threshold Voltage | carrier type | n-type | — | |||
| Optical Band Gap | Arrhenius activation gap | 0.26eV | — | |||
| Fet Threshold Voltage | Mott-insulator onset temperature | 120K | — | |||
| Fet Threshold Voltage | tunnelling onset temperature | 120K | — | |||
| Fet Threshold Voltage | low-energy feature persistence limit | 25mV | — | |||
| Fet Threshold Voltage | early-onset inelastic feature | 1.03mV | — | |||
| Fet Threshold Voltage | Néel temperature range | 7-14.5K | — | |||
| Fet Threshold Voltage | common inelastic features highlighted | 4 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | field effect mobility | 0.001cm²/Vs | — | |||
| Fet Threshold Voltage | carrier type | n-type | — | |||
| Optical Band Gap | Arrhenius activation gap | 0.26eV | — | |||
| Fet Threshold Voltage | Mott-insulator onset temperature | 120K | — | |||
| Fet Threshold Voltage | tunnelling onset temperature | 120K | — | |||
| Fet Threshold Voltage | low-energy feature persistence limit | 25mV | — | |||
| Fet Threshold Voltage | early-onset inelastic feature | 1.03mV | — | |||
| Fet Threshold Voltage | Néel temperature range | 7-14.5K | — | |||
| Fet Threshold Voltage | common inelastic features highlighted | 4 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | field effect mobility | 0.001cm²/Vs | — | |||
| Fet Threshold Voltage | carrier type | n-type | — | |||
| Optical Band Gap | Arrhenius activation gap | 0.26eV | — | |||
| Fet Threshold Voltage | Mott-insulator onset temperature | 120K | — | |||
| Fet Threshold Voltage | tunnelling onset temperature | 120K | — | |||
| Fet Threshold Voltage | low-energy feature persistence limit | 25mV | — | |||
| Fet Threshold Voltage | early-onset inelastic feature | 1.03mV | — | |||
| Fet Threshold Voltage | Néel temperature range | 7-14.5K | — | |||
| Fet Threshold Voltage | common inelastic features highlighted | 4 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | field effect mobility | 0.001cm²/Vs | — | |||
| Fet Threshold Voltage | carrier type | n-type | — | |||
| Optical Band Gap | Arrhenius activation gap | 0.26eV | — | |||
| Fet Threshold Voltage | Mott-insulator onset temperature | 120K | — | |||
| Fet Threshold Voltage | tunnelling onset temperature | 120K | — | |||
| Fet Threshold Voltage | low-energy feature persistence limit | 25mV | — | |||
| Fet Threshold Voltage | early-onset inelastic feature | 1.03mV | — | |||
| Fet Threshold Voltage | Néel temperature range | 7-14.5K | — | |||
| Fet Threshold Voltage | common inelastic features highlighted | 4 | — |