Research paperTheoreticalExchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependenceI. V. Krainov, K. A. Baryshnikov, A. A. Karpova, N. S. AverkievarXiv preprint·2023·10.1103/PhysRevB.107.174401·arXiv:2301.05038AbstractWe calculate the exchange interaction constant between the manganese-ion d-shell and a bounded GaAs valence-band hole using microscopic multiparticle wave functions. The paper derives the parametric dependence of the exchange interaction on crystal deformation, shows that the effect can reach tens of percent for strain tensor values of 10⁻³ to 10⁻², and argues that this deformation dependence can help explain the high-temperature reduction of the magnetic susceptibility of Mn in GaAs.Read more
Theoretical Mn acceptor center in GaAs: a manganese ion d-shell exchange-coupled to a localized Γ8 valence-band hole.2 propertiesSimulatedGaAsStudied MaterialMnStudied MaterialExpand
Research paperTheoreticalExchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependenceI. V. Krainov, K. A. Baryshnikov, A. A. Karpova, N. S. AverkievarXiv preprint·2023·10.1103/PhysRevB.107.174401·arXiv:2301.05038AbstractWe calculate the exchange interaction constant between the manganese-ion d-shell and a bounded GaAs valence-band hole using microscopic multiparticle wave functions. The paper derives the parametric dependence of the exchange interaction on crystal deformation, shows that the effect can reach tens of percent for strain tensor values of 10⁻³ to 10⁻², and argues that this deformation dependence can help explain the high-temperature reduction of the magnetic susceptibility of Mn in GaAs.Read more
Theoretical Mn acceptor center in GaAs: a manganese ion d-shell exchange-coupled to a localized Γ8 valence-band hole.2 propertiesSimulatedGaAsStudied MaterialMnStudied MaterialExpand
Research paperTheoreticalExchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependenceI. V. Krainov, K. A. Baryshnikov, A. A. Karpova, N. S. AverkievarXiv preprint·2023·10.1103/PhysRevB.107.174401·arXiv:2301.05038AbstractWe calculate the exchange interaction constant between the manganese-ion d-shell and a bounded GaAs valence-band hole using microscopic multiparticle wave functions. The paper derives the parametric dependence of the exchange interaction on crystal deformation, shows that the effect can reach tens of percent for strain tensor values of 10⁻³ to 10⁻², and argues that this deformation dependence can help explain the high-temperature reduction of the magnetic susceptibility of Mn in GaAs.Read more
Theoretical Mn acceptor center in GaAs: a manganese ion d-shell exchange-coupled to a localized Γ8 valence-band hole.2 propertiesSimulatedGaAsStudied MaterialMnStudied MaterialExpand
Research paperTheoreticalExchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependenceI. V. Krainov, K. A. Baryshnikov, A. A. Karpova, N. S. AverkievarXiv preprint·2023·10.1103/PhysRevB.107.174401·arXiv:2301.05038AbstractWe calculate the exchange interaction constant between the manganese-ion d-shell and a bounded GaAs valence-band hole using microscopic multiparticle wave functions. The paper derives the parametric dependence of the exchange interaction on crystal deformation, shows that the effect can reach tens of percent for strain tensor values of 10⁻³ to 10⁻², and argues that this deformation dependence can help explain the high-temperature reduction of the magnetic susceptibility of Mn in GaAs.Read more
Theoretical Mn acceptor center in GaAs: a manganese ion d-shell exchange-coupled to a localized Γ8 valence-band hole.2 propertiesSimulatedGaAsStudied MaterialMnStudied MaterialExpand
