Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device A: an hBN-picked-up semiconducting single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
2 characterizations6 properties4 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Device B: an hBN-picked-up pre-identified metallic single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
1 characterization2 properties2 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Suspended CNT/hBN pickup stack used during assembly before final transfer to the superconducting circuit.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device A: an hBN-picked-up semiconducting single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
2 characterizations6 properties4 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Device B: an hBN-picked-up pre-identified metallic single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
1 characterization2 properties2 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Suspended CNT/hBN pickup stack used during assembly before final transfer to the superconducting circuit.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device A: an hBN-picked-up semiconducting single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
2 characterizations6 properties4 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Device B: an hBN-picked-up pre-identified metallic single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
1 characterization2 properties2 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Suspended CNT/hBN pickup stack used during assembly before final transfer to the superconducting circuit.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Device A: an hBN-picked-up semiconducting single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
2 characterizations6 properties4 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Device B: an hBN-picked-up pre-identified metallic single-walled carbon nanotube integrated as a Josephson junction on Nb/Au electrodes over a SiO₂/doped-Si back-gated substrate.
1 characterization2 properties2 figures
ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric
Suspended CNT/hBN pickup stack used during assembly before final transfer to the superconducting circuit.
