Josephson junctions based on ultraclean carbon nanotubes

Paper details

Research paper

Experimental Characterization

S. Annabi, E. Arrighi, A. Peugeot, H. Riechert et al.

arXiv preprint·2024·10.1103/PhysRevApplied.22.064035·arXiv:2405.19192

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 characterizations6 properties4 figures

ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

1 characterization2 properties2 figures

ExperimentalCNTStudied MaterialhBNSubstrate / DielectricNbCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

No measurements recorded

ExperimentalCNTStudied MaterialhBNSubstrate / DielectricPDMSSubstrate / Dielectric

carbon nanotube

CNT

Studied Material

Also known as

CNT

Variables

type= single-walled carbon nanotube

studied material

hexagonal boron nitride

hBN

Substrate / Dielectric

Related documents with shared materials, methods, properties, or citations.

Josephson junctions based on ultraclean carbon nanotubes | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Conductance Oscillation Period	gate-voltage period	17.1mV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Conductance Oscillation Period	gate-voltage period	120mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Conductance Oscillation Period	fast oscillation period	17mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Charging Energy	U	5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Confinement Energy	ΔE	1.5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cs	13aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cd	10aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cg	11aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—

Type	Label	Value	Material	Sample	Source
Conductance Oscillation Period	gate-voltage period	17.1mV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Conductance Oscillation Period	gate-voltage period	120mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Conductance Oscillation Period	fast oscillation period	17mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Charging Energy	U	5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Confinement Energy	ΔE	1.5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cs	13aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cd	10aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cg	11aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—

Type	Label	Value	Material	Sample	Source
Conductance Oscillation Period	gate-voltage period	17.1mV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Conductance Oscillation Period	gate-voltage period	120mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Conductance Oscillation Period	fast oscillation period	17mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Charging Energy	U	5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Confinement Energy	ΔE	1.5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cs	13aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cd	10aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cg	11aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—

Type	Label	Value	Material	Sample	Source
Conductance Oscillation Period	gate-voltage period	17.1mV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Conductance Oscillation Period	gate-voltage period	120mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Conductance Oscillation Period	fast oscillation period	17mV	CNT	Device B: an hBN-picked-up pre-identified metallic single-wa	—
Charging Energy	U	5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Confinement Energy	ΔE	1.5meV	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cs	13aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cd	10aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—
Capacitance	Cg	11aF	CNT	Device A: an hBN-picked-up semiconducting single-walled carb	—