Interfacial properties of MoS2 thin films grown on functional substrates

Hafiz Sami Ur Rehman; Nunzia Coppola; Alice Galdi; Sandeep Kumar Chaluvadi; Shyni Punathum Chalil; Pasquale Orgiani; Sara Passuti; Regina Ciancio; Paolo Barone; Luigi Maritato; Carmela Aruta

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Interfacial properties of MoS₂ thin films grown on functional substrates

Hafiz Sami Ur Rehman, Nunzia Coppola, Alice Galdi, Sandeep Kumar Chaluvadi et al.

2026

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

2 preparations1 characterization5 properties3 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

2 preparations1 characterization4 properties3 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

2 preparations1 characterization7 properties3 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations1 property4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

2 preparations1 characterization5 properties3 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

2 preparations1 characterization4 properties3 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

2 preparations1 characterization7 properties3 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations1 property4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

2 preparations1 characterization5 properties3 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

2 preparations1 characterization4 properties3 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

2 preparations1 characterization7 properties3 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations1 property4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

2 preparations1 characterization5 properties3 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

2 preparations1 characterization4 properties3 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

2 preparations1 characterization7 properties3 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSrTiO₃Substrate / Dielectric

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations1 property4 figures

ExperimentalMoS₂Studied MaterialAl₂O₃Substrate / Dielectric

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

2 preparations2 characterizations2 properties4 figures

ExperimentalMoS₂Studied MaterialSiCSubstrate / Dielectric

Type	Label	Value	Material	Sample	Source
Sheet Resistivity	room-temperature resistivity	0.22mΩ·cm	MoS₂	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	7.3mΩ·cm	MoS₂	Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	3.8mΩ·cm	MoS₂	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Fet Sheet Resistance	S/Mo ratio	1.94	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Fet Sheet Resistance	S/Mo ratio	1.18	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Sheet Resistance	S/Mo ratio	1.45	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.42eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.026eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Threshold Voltage	VBM relative to EF	0.02eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Interface Interdiffusion Depth	Ti interdiffusion depth	5nm	MoS₂ SrTiO₃	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Interface Oxidized Layer Thickness	oxygen-containing layer thickness	16nm	MoS₂ SiC	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Xps Binding Energy Shift	—	0.048eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Xps Binding Energy Shift	—	2.083eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Xps Binding Energy Shift	—	0.082eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.046eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	-2.097eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.144eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	S 2p	1.2eV	MoS₂ SrTiO₃ Al₂O₃ SiC	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	—	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—

Type	Label	Value	Material	Sample	Source
Sheet Resistivity	room-temperature resistivity	0.22mΩ·cm	MoS₂	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	7.3mΩ·cm	MoS₂	Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	3.8mΩ·cm	MoS₂	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Fet Sheet Resistance	S/Mo ratio	1.94	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Fet Sheet Resistance	S/Mo ratio	1.18	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Sheet Resistance	S/Mo ratio	1.45	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.42eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.026eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Threshold Voltage	VBM relative to EF	0.02eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Interface Interdiffusion Depth	Ti interdiffusion depth	5nm	MoS₂ SrTiO₃	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Interface Oxidized Layer Thickness	oxygen-containing layer thickness	16nm	MoS₂ SiC	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Xps Binding Energy Shift	—	0.048eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Xps Binding Energy Shift	—	2.083eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Xps Binding Energy Shift	—	0.082eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.046eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	-2.097eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.144eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	S 2p	1.2eV	MoS₂ SrTiO₃ Al₂O₃ SiC	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	—	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—

Type	Label	Value	Material	Sample	Source
Sheet Resistivity	room-temperature resistivity	0.22mΩ·cm	MoS₂	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	7.3mΩ·cm	MoS₂	Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	3.8mΩ·cm	MoS₂	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Fet Sheet Resistance	S/Mo ratio	1.94	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Fet Sheet Resistance	S/Mo ratio	1.18	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Sheet Resistance	S/Mo ratio	1.45	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.42eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.026eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Threshold Voltage	VBM relative to EF	0.02eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Interface Interdiffusion Depth	Ti interdiffusion depth	5nm	MoS₂ SrTiO₃	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Interface Oxidized Layer Thickness	oxygen-containing layer thickness	16nm	MoS₂ SiC	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Xps Binding Energy Shift	—	0.048eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Xps Binding Energy Shift	—	2.083eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Xps Binding Energy Shift	—	0.082eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.046eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	-2.097eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.144eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	S 2p	1.2eV	MoS₂ SrTiO₃ Al₂O₃ SiC	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	—	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—

Type	Label	Value	Material	Sample	Source
Sheet Resistivity	room-temperature resistivity	0.22mΩ·cm	MoS₂	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	7.3mΩ·cm	MoS₂	Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS	—
Sheet Resistivity	room-temperature resistivity	3.8mΩ·cm	MoS₂	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Fet Sheet Resistance	S/Mo ratio	1.94	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Fet Sheet Resistance	S/Mo ratio	1.18	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Sheet Resistance	S/Mo ratio	1.45	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.42eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Fet Threshold Voltage	VBM relative to EF	0.026eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Fet Threshold Voltage	VBM relative to EF	0.02eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Interface Interdiffusion Depth	Ti interdiffusion depth	5nm	MoS₂ SrTiO₃	Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS	—
Interface Oxidized Layer Thickness	oxygen-containing layer thickness	16nm	MoS₂ SiC	Thicker MoS₂ film grown on SiC for transport and STEM-EDS co	—
Xps Binding Energy Shift	—	0.048eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—
Xps Binding Energy Shift	—	2.083eV	MoS₂	MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure	—
Xps Binding Energy Shift	—	0.082eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.046eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	-2.097eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Binding Energy Shift	—	0.144eV	MoS₂	MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	S 2p	1.2eV	MoS₂ SrTiO₃ Al₂O₃ SiC	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measure MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by X	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	—	—
Xps Spin Orbit Splitting	Mo 3d	3.14eV	MoS₂	MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XP	—

Interfacial properties of MoS₂ thin films grown on functional substrates

Interfacial properties of MoS₂ thin films grown on functional substrates

Interfacial properties of MoS₂ thin films grown on functional substrates

Interfacial properties of MoS₂ thin films grown on functional substrates

Interfacial properties of MoS₂ thin films grown on functional substrates

Interfacial properties of MoS₂ thin films grown on functional substrates

Interfacial properties of MoS₂ thin films grown on functional substrates

Interfacial properties of MoS₂ thin films grown on functional substrates

Samples

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

MoS₂ film 2 ML thick grown on SrTiO₃(111) and measured by XPS.

MoS₂ film 2 ML thick grown on c-axis Al₂O₃(0001) and measured by XPS.

MoS₂ film 2 ML thick grown on 6H-SiC(0001) and measured by XPS.

Thicker MoS₂ film grown on SrTiO₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on Al₂O₃ for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Thicker MoS₂ film grown on SiC for transport and STEM-EDS comparison; reported thickness 60-80 nm.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected