Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | substrate spectral downshift | 16cm⁻¹ | — | |||
| Fet Sheet Resistance | remanent state P₁ | 8000ohm/sq | — | |||
| Fet Sheet Resistance | remanent state P₂ | 3000ohm/sq | — | |||
| Fet On Off Ratio | ferroelectrically induced resistance change | 134% | — | |||
| Fet Mobility | hole mobility | 20371cm²/Vs | — | |||
| Fet Mobility | hole mobility | 6928cm²/Vs | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 80% | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 17% | — | |||
| Fet On Off Ratio | transconductance loop magnification | 86% | — | |||
| Fet On Off Ratio | magnetoresistance under light | 100% | — | |||
| Fet On Off Ratio | magnetoresistance change under light | 63% | — | |||
| Fet On Off Ratio | overall magnetoresistance control by ferroelectric switching | 67% | — | |||
| Fet Threshold Voltage | Fermi level shift | 0.46eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | substrate spectral downshift | 16cm⁻¹ | — | |||
| Fet Sheet Resistance | remanent state P₁ | 8000ohm/sq | — | |||
| Fet Sheet Resistance | remanent state P₂ | 3000ohm/sq | — | |||
| Fet On Off Ratio | ferroelectrically induced resistance change | 134% | — | |||
| Fet Mobility | hole mobility | 20371cm²/Vs | — | |||
| Fet Mobility | hole mobility | 6928cm²/Vs | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 80% | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 17% | — | |||
| Fet On Off Ratio | transconductance loop magnification | 86% | — | |||
| Fet On Off Ratio | magnetoresistance under light | 100% | — | |||
| Fet On Off Ratio | magnetoresistance change under light | 63% | — | |||
| Fet On Off Ratio | overall magnetoresistance control by ferroelectric switching | 67% | — | |||
| Fet Threshold Voltage | Fermi level shift | 0.46eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | substrate spectral downshift | 16cm⁻¹ | — | |||
| Fet Sheet Resistance | remanent state P₁ | 8000ohm/sq | — | |||
| Fet Sheet Resistance | remanent state P₂ | 3000ohm/sq | — | |||
| Fet On Off Ratio | ferroelectrically induced resistance change | 134% | — | |||
| Fet Mobility | hole mobility | 20371cm²/Vs | — | |||
| Fet Mobility | hole mobility | 6928cm²/Vs | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 80% | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 17% | — | |||
| Fet On Off Ratio | transconductance loop magnification | 86% | — | |||
| Fet On Off Ratio | magnetoresistance under light | 100% | — | |||
| Fet On Off Ratio | magnetoresistance change under light | 63% | — | |||
| Fet On Off Ratio | overall magnetoresistance control by ferroelectric switching | 67% | — | |||
| Fet Threshold Voltage | Fermi level shift | 0.46eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | substrate spectral downshift | 16cm⁻¹ | — | |||
| Fet Sheet Resistance | remanent state P₁ | 8000ohm/sq | — | |||
| Fet Sheet Resistance | remanent state P₂ | 3000ohm/sq | — | |||
| Fet On Off Ratio | ferroelectrically induced resistance change | 134% | — | |||
| Fet Mobility | hole mobility | 20371cm²/Vs | — | |||
| Fet Mobility | hole mobility | 6928cm²/Vs | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 80% | — | |||
| Fet On Off Ratio | magnetoresistance at 9 T | 17% | — | |||
| Fet On Off Ratio | transconductance loop magnification | 86% | — | |||
| Fet On Off Ratio | magnetoresistance under light | 100% | — | |||
| Fet On Off Ratio | magnetoresistance change under light | 63% | — | |||
| Fet On Off Ratio | overall magnetoresistance control by ferroelectric switching | 67% | — | |||
| Fet Threshold Voltage | Fermi level shift | 0.46eV | — |