Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Michael Shur; Gregory Aizin

doi:10.48550/arxiv.2510.17827

Paper details

Research paper

Theoretical

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Michael Shur, Gregory Aizin

2025·10.48550/arxiv.2510.17827·arXiv:2510.17827

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

9 properties

AlGaN/GaN heterostructureStudied MaterialAlGaNStudied MaterialGaNStudied Material

Materials

AlGaN/GaN heterostructure

Studied Material

Also known as

AlGaN/GaN plasmonic crystalAlGaN/GaN plasmonic structure

studied material

AlGaN

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	barrier layer dielectric constant K	10	Gate dielectric/barrier permittivity layer	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Effective Mass	effective mass	0.24	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	0.16m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	2.5m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₁	5e-8m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₂	1e-7m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Thickness	barrier layer thickness d	2.5e-8m	AlGaN	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n10	1000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n20	10000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	barrier layer dielectric constant K	10	Gate dielectric/barrier permittivity layer	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Effective Mass	effective mass	0.24	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	0.16m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	2.5m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₁	5e-8m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₂	1e-7m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Thickness	barrier layer thickness d	2.5e-8m	AlGaN	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n10	1000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n20	10000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	barrier layer dielectric constant K	10	Gate dielectric/barrier permittivity layer	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Effective Mass	effective mass	0.24	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	0.16m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	2.5m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₁	5e-8m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₂	1e-7m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Thickness	barrier layer thickness d	2.5e-8m	AlGaN	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n10	1000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n20	10000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	barrier layer dielectric constant K	10	Gate dielectric/barrier permittivity layer	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Effective Mass	effective mass	0.24	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	0.16m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Mobility	mobility	2.5m2/Vs	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₁	5e-8m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Length	L₂	1e-7m	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Thickness	barrier layer thickness d	2.5e-8m	AlGaN	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n10	1000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—
Carrier Density	n20	10000000000000000m⁻²	AlGaN/GaN heterostructure	Simulated low-high AlGaN/GaN plasmonic crystal unit cell use	—

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Frequency multiplication in terahertz band using AlGaN/GaN plasmonic crystals

Samples

Simulated low-high AlGaN/GaN plasmonic crystal unit cell used for generalized Mathieu-equation analysis of parametric resonance and frequency multiplication.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations