Abstract

We fabricated the 1D nanoscrolled monolayer MoS₂ (1L-MoS₂) with superior characteristics from 1L-MoS₂ film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which facilitates the controlled scroll formation. These nanoscrolls behave as multilayers in morphology and monolayer electronically. The nanoscrolls exhibited a direct optical gap with enhanced photoluminescence quantum yield stemming from the weak interlayer coupling among constituent layers and were corroborated by low-frequency Raman measurements and Kelvin probe force microscopy measurements. Furthermore, enhanced photoluminescence emission after annealing uncovers the thermal stability of nanoscrolls. In addition, conducting atomic force microscopy results exhibit a significantly higher photocurrent in the nanoscrolled 1L-MoS₂ compared to the 1L-MoS2. We also realized significantly improved field effect transistor device parameters in nanoscrolled 1L-MoS₂ devices. In nanoscrolled devices, we report the highest mobility value of 2400 cm2V-1s-1 reported in any form of 1L-MoS2.

Abstract

We fabricated the 1D nanoscrolled monolayer MoS₂ (1L-MoS₂) with superior characteristics from 1L-MoS₂ film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which facilitates the controlled scroll formation. These nanoscrolls behave as multilayers in morphology and monolayer electronically. The nanoscrolls exhibited a direct optical gap with enhanced photoluminescence quantum yield stemming from the weak interlayer coupling among constituent layers and were corroborated by low-frequency Raman measurements and Kelvin probe force microscopy measurements. Furthermore, enhanced photoluminescence emission after annealing uncovers the thermal stability of nanoscrolls. In addition, conducting atomic force microscopy results exhibit a significantly higher photocurrent in the nanoscrolled 1L-MoS₂ compared to the 1L-MoS2. We also realized significantly improved field effect transistor device parameters in nanoscrolled 1L-MoS₂ devices. In nanoscrolled devices, we report the highest mobility value of 2400 cm2V-1s-1 reported in any form of 1L-MoS2.

Abstract

We fabricated the 1D nanoscrolled monolayer MoS₂ (1L-MoS₂) with superior characteristics from 1L-MoS₂ film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which facilitates the controlled scroll formation. These nanoscrolls behave as multilayers in morphology and monolayer electronically. The nanoscrolls exhibited a direct optical gap with enhanced photoluminescence quantum yield stemming from the weak interlayer coupling among constituent layers and were corroborated by low-frequency Raman measurements and Kelvin probe force microscopy measurements. Furthermore, enhanced photoluminescence emission after annealing uncovers the thermal stability of nanoscrolls. In addition, conducting atomic force microscopy results exhibit a significantly higher photocurrent in the nanoscrolled 1L-MoS₂ compared to the 1L-MoS2. We also realized significantly improved field effect transistor device parameters in nanoscrolled 1L-MoS₂ devices. In nanoscrolled devices, we report the highest mobility value of 2400 cm2V-1s-1 reported in any form of 1L-MoS2.

Abstract

We fabricated the 1D nanoscrolled monolayer MoS₂ (1L-MoS₂) with superior characteristics from 1L-MoS₂ film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which facilitates the controlled scroll formation. These nanoscrolls behave as multilayers in morphology and monolayer electronically. The nanoscrolls exhibited a direct optical gap with enhanced photoluminescence quantum yield stemming from the weak interlayer coupling among constituent layers and were corroborated by low-frequency Raman measurements and Kelvin probe force microscopy measurements. Furthermore, enhanced photoluminescence emission after annealing uncovers the thermal stability of nanoscrolls. In addition, conducting atomic force microscopy results exhibit a significantly higher photocurrent in the nanoscrolled 1L-MoS₂ compared to the 1L-MoS2. We also realized significantly improved field effect transistor device parameters in nanoscrolled 1L-MoS₂ devices. In nanoscrolled devices, we report the highest mobility value of 2400 cm2V-1s-1 reported in any form of 1L-MoS2.